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    P2804ND5G Search Results

    P2804ND5G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    P2804ND5G Niko Semiconductor N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary Original PDF

    P2804ND5G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P2804ND5G

    Abstract: SEM 2005 p2804 niko P2804N g1id
    Text: NIKO-SEM P2804ND5G N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary TO-252-5 Lead-Free PRODUCT SUMMARY N-Channel 40 28mΩ 7A P-Channel -40 55mΩ -5.5A D2 G1 G2 S1 G : GATE D : DRAIN S : SOURCE S1 G1 ID D1/D2 RDS ON S2 G2 D1 V(BR)DSS S2


    Original     		PDF P2804ND5G O-252-5 Apr-18-2005 P2804ND5G SEM 2005 p2804 niko P2804N g1id

    复合

    Abstract: ELM35601KA
    Text: 复合沟道 MOSFET ELM35601KA-S •概要 ■特点 ELM35601KA-S 是低输入电容低工 N 沟道 作电压、低导通电阻的大电流 MOSFET。 •Vds=40V P 沟道 ·Vds=-40V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=7A ·Id=-5.5A


    Original     		PDF ELM35601KA-S P2804ND5G O-252-5 SEP-16-2005 复合 ELM35601KA

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

    Untitled

    Abstract: No abstract text available
    Text: コンプリメンタリーパワー MOSFET ELM35601KA-S •概要 ■特長 ELM35601KA-S は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=40V 性を備えた大電流 MOSFET です。 ・ Id=7A


    Original     		PDF ELM35601KA-S P2804ND5G O-252-5 SEP-16-2005

    P2804ND5G

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35601KA-S •General Description ■Features ELM35601KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 49mΩ(Vgs=5V)


    Original     		PDF ELM35601KA-S ELM35601KA-S P2804ND5G O-252-5 SEP-16-2005 P2804ND5G

    transistor 123 DL

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35601KA-S •General Description ■Features ELM35601KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 49mΩ(Vgs=5V)


    Original     		PDF ELM35601KA-S ELM35601KA-S P2804ND5G O-252-5 SEP-16-2005 transistor 123 DL