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    D35 TRANSISTOR Search Results

    D35 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D35 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    c828, transistor de audio

    Abstract: quanta Q5627 OZ711EC1B quanta computer quanta BL 8 x 24 DOT MATRIX DISPLAY project c528 transistor MD2810 BT319
    Text: 5 MODEL: 2 1 1A FIRST RELEASE 1B MODIFY PAGE05 PAGE06 PAGE18 PAGE26 PAGE33 PAGE36 BOM : ECN NO. E200303-0277 : R495 CHANGE TO 127 ohm 1% : C604 & C654 CHANGE TO 220uF / 2.5V : D4 CHANGE TO CH715F : D35 DON'T STUFF : PU6 CHANGE TO MAX1907AETL , PQ15 & PQ23 CHANGE TO FDB7045L , PC46 CHANGE TO 220pF


    Original     		PAGE05 PAGE06 PAGE18 PAGE26 PAGE33 PAGE36 PAGE03 PAGE07 PAGE08 c828, transistor de audio quanta Q5627 OZ711EC1B quanta computer quanta BL 8 x 24 DOT MATRIX DISPLAY project c528 transistor MD2810 BT319 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44324185B-A, 44324365B-A 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The μPD44324185B-A is a 2,097,152-word by 18-bit and the μPD44324365B-A is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor


    Original     		PD44324185B-A, 44324365B-A 36M-BIT PD44324185B-A 152-word 18-bit PD44324365B-A 576-word 36-bit PDF

    PD44324185BF5-E35-FQ1

    Abstract: No abstract text available
    Text: Datasheet PD44324185B-A μPD44324365B-A 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION R10DS0037EJ0100 Rev.1.00 Sep 10, 2010 Description The μPD44324185B-A is a 2,097,152-word by 18-bit and the μPD44324365B-A is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor


    Original     		PD44324185B-A PD44324365B-A 36M-BIT R10DS0037EJ0100 PD44324185B-A 152-word 18-bit PD44324365B-A 576-word 36-bit PD44324185BF5-E35-FQ1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet R1Q3A4436RBG, R1Q3A4418RBG 144-Mbit QDR II SRAM 4-word Burst R10DS0141EJ0100 Rev.1.00 Jun 01, 2013 Description The R1Q3A4436RBG is a 4,194,304-word by 36-bit and the R1Q3A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor


    Original     		R1Q3A4436RBG, R1Q3A4418RBG 144-Mbit R10DS0141EJ0100 R1Q3A4436RBG 304-word 36-bit R1Q3A4418RBG 608-word 18-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet R1Q2A4436RBG, R1Q2A4418RBG 144-Mbit QDR II SRAM 2-word Burst R10DS0140EJ0100 Rev.1.00 Sep 02, 2013 Description The R1Q2A4436RBG is a 4,194,304-word by 36-bit and the R1Q2A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor


    Original     		R1Q2A4436RBG, R1Q2A4418RBG 144-Mbit R10DS0140EJ0100 R1Q2A4436RBG 304-word 36-bit R1Q2A4418RBG 608-word 18-bit PDF

    50S20

    Abstract: BH6455GUL
    Text: System Lens Driver Series for Mobile Phone Cameras 2 wire serial interface Lens Driver for Voice Coil Motor I2C BUS compatible No.12015EAT04 BH6455GUL ●General Description The BH6455GUL motor driver provide 1 Constant -Current Driver 0.25ch bridge. This lens driver is offered in an ultra-small functional lens


    Original     		BH6455GUL BH6455GUL R1120A 50S20 PDF

    marking code 1p

    Abstract: No abstract text available
    Text: 72QM2 R1Q3A7236ABG / R1Q3A7218ABG Series R1Q3A7236ABG R1Q3A7218ABG 72-Mbit QDR II SRAM 4-word Burst R10DS0176EJ0011 Rev. 0.11 2013.01.15 Description The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory


    Original     		72QM2 R1Q3A7236ABG R1Q3A7218ABG R1Q3A7218ABG 72-Mbit R1Q3A7236 152-word 36-bit R1Q3A7218 marking code 1p PDF

    Untitled

    Abstract: No abstract text available
    Text: 72QM2 R1Q3A7236ABB / R1Q3A7218ABB Series R1Q3A7236ABB R1Q3A7218ABB 72-Mbit QDR II SRAM 4-word Burst R10DS0165EJ0011 Rev. 0.11 2013.01.15 Description The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory


    Original     		72QM2 R1Q3A7236ABB R1Q3A7218ABB R1Q3A7218ABB 72-Mbit R1Q3A7236 152-word 36-bit R1Q3A7218 PDF

    transistor EFT 352

    Abstract: d35 transistor farnell thermocouples mkds DFA350 EN61000-3-3 EN61000-4-3 EN61000-4-4 MFA350 transistor c63
    Text: AC-DC 350 Watts xppower.com MFA350 Series • Screw Terminals Available • U-Channel, Cover Fan & Hotswap Formats • High Power Density up to 11.1 W/in3 • -10 °C to +70 °C Operation • Power Fail, DC OK & Active Current Share • 5 V Standby & 12 V Fan Supply Outputs


    Original     		MFA350 DFA350) EN61000-3-2 VAC/50 30-Oct-08 MFA350 transistor EFT 352 d35 transistor farnell thermocouples mkds DFA350 EN61000-3-3 EN61000-4-3 EN61000-4-4 transistor c63 PDF

    T6,3 H 250 V Fuse

    Abstract: mkds DFA350 EN61000-3-3 EN61000-4-3 EN61000-4-4 MFA350 R0225
    Text: AC-DC 350 Watts xppower.com MFA350 Series • U-Channel, Cover Fan & Hotswap Formats • High Power Density up to 11.1 W/in3 • Screw Terminals Available • -10 °C to +70 °C Operation • Power Fail, DC OK & Active Current Share • 5 V Standby & 12 V Fan Supply Outputs


    Original     		MFA350 DFA350) EN61000-3-2 VAC/50 23-Oct-08 MFA350 T6,3 H 250 V Fuse mkds DFA350 EN61000-3-3 EN61000-4-3 EN61000-4-4 R0225 PDF

    transistor 123 DL

    Abstract: TRANSISTOR 8FB a406 transistor A7N transistor
    Text: AOL1444 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1444 uses advanced trench technology to provide excellent R DS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power


    Original     		AOL1444 AOL1444 DDD50% transistor 123 DL TRANSISTOR 8FB a406 transistor A7N transistor PDF

    R0225

    Abstract: No abstract text available
    Text: AC-DC 350/420 Watts MFA Series xppower.com • U-Channel, Cover Fan & Hotswap Formats • Power Density up to 12.8 W/in3 • Power Fail, DC OK & Active Current Share • 5 V Standby Outputs • 12 V Fan Supply Outputs • Screw Terminals Available • 3 Year Warranty


    Original     		VAC/50 VAC/60 05-Oct-11 MFA350/420 R0225 PDF

    3SK2411

    Abstract: 2SC1215 3SK143 3SK22 3sk169 3SK247
    Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Appli­ Band cation TO-92 (D46) New S Type (D34) M Type (D35) 2SC1215 Package (No.) SS Mini Type S Mini Type S Mini Type (3 pin) (4 pin)


    OCR Scan     		2SC1215 3SK268 2SC3354 2SC4716 2SC3354 2SC2636 3SK2411 2SC1215 3SK143 3SK22 3sk169 3SK247 PDF

    2SB873

    Abstract: 2SA879 D2483 2SC1360 2sc5018 2SD2360
    Text: Package No. Application Functions fx (MHz) VcEO S-Mini Type <D5) Mini Type (D12) New S Type (D34) TO-92 (D46) M Type (D35) TO-92NL (D48) TO-92L (D47) Mini-Power Type MT1 Type (D37) MT2 Type (D38) (mA) »250 10 1A * < 0.15 *500 20 500 * <0.2 »250 20 500 * <0.2


    OCR Scan     		O-92NL O-92L 2SB1537 2SB1538 2SD2358 2SB1539 V2SD2359 2SB1614 2SC1518 2SB1540 2SB873 2SA879 D2483 2SC1360 2sc5018 2SD2360 PDF

    C1360A

    Abstract: 2SC4971 2SB873 2SB1615 SC1360
    Text: P a c k a g e No. Applica­ tion S M ini T y p e Functions S S Mini Type (D1) M ini T y p e T M in i T y p e (D 1 2) (D22) (D5) New S Type (D34) VcEO T O -9 2 M Type T O -9 2 N L T O -9 2 L (D46) (D35) (D48) (D47) Mini Power Type (D19) MT1 T y p e M T 2 Type


    OCR Scan     		2SB1537 2SD2357 2SB1538 12SD2358 A2SB1611 2SD1679 2SB789/A 2SD968/A 2SB1297 2SD1937 C1360A 2SC4971 2SB873 2SB1615 SC1360 PDF

    2sk to-92

    Abstract: No abstract text available
    Text: Field Effect Transistors # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Digital/ analog switching Nch Pch Electrical Characteristics (Ta = 2 5 °C) Type No. V ds * V dss (V) V gso Id (V) (A) (mW) 2SK601 80 20 0.5 2SK614 80


    OCR Scan     		2SK601 2SK614 2SK615 2SK620 A2SK2276 A2SK2342 2sk to-92 PDF

    2sc4973

    Abstract: 2SC5020 2SC2671
    Text: Transistors Selection Guide by Applications and Functions # High Speed Switch • V C O and High Frequency Type Application Functions High speed switch Package (No.) SS Mini Type (D1) S Mini Type (D5) 2SA1806 2SA1739 2SA1738 2SC4691 2SC3938 2SC3757 2SC4755


    OCR Scan     		2SA1806 2SC4691 2SC4755 2SA1739 2SC3938 2SA1738 2SC3757 2SC4782 2SC4969 2SC3811 2sc4973 2SC5020 2SC2671 PDF

    Untitled

    Abstract: No abstract text available
    Text: jtà c C M W an A M P com pany Radar Pulsed Power Transistor, 50W, 100ns Pulse, 10% Duty 2.2 - 2.6 GHz PH2226-50M V2.00 Features 8b • NPN S ilic o n P o w e r T r a n s is to r • C o m m o n B a se C o n fig u r a tio n • B ro a d b a n d C la s s C O p e r a tio n


    OCR Scan     		100ns PH2226-50M PDF

    2SD2529

    Abstract: 2SB1627 2SC3312 2SD1010 2SD1993 2SD1995 2SB642 2SB1600 2sd661 2SB1601
    Text: ; •Silicon Small Signal Transistors / ! ; # General-use Low Frequency Amplifiers and Others I 2SB1462 12SD2216 1 2SA1791 General­ is e low freq. ampli­ fier 12SC4656 f 2SB1218A 12SD1819A 2SB1219/A I 2SD1820/A i 2SB709A I 2SD601A 1 2SB710/A I 2SD602/A


    OCR Scan     		2SB642 2SA1619/A 2SB1322A 2SB1462 12SD2216 2SB1218A 12SD1819A 2SB1219/A 2SA921 2SD2258 2SD2529 2SB1627 2SC3312 2SD1010 2SD1993 2SD1995 2SB642 2SB1600 2sd661 2SB1601 PDF

    2SB1446

    Abstract: 2SD2458 2sc5335 2SD1010 2SD1993 2SD1995 2SB642 2SD119 2SD2456 2SC2632
    Text: •Silicon Small Signal Transistors # General-use Low Frequency Amplifiers and Others Package No. SS-Mini Type (D1 ) S-Mini Type (D5) I 2SB1462 ' 2SB1218A . 2SD2216 2SD1819A : 2SB1219/A i 2SD1820/A i 2SA1791 i 2SC4656 Mini Type (D12) New S Type (034) ! 2SB709A


    OCR Scan     		2SB1462 2SB1218A 2SD1819A 2SB1219/A 2SD1820/A 2SB709A 2SD601A 2SB710/A 2SD602/A 2SA1309A 2SB1446 2SD2458 2sc5335 2SD1010 2SD1993 2SD1995 2SB642 2SD119 2SD2456 2SC2632 PDF

    d35 transistor

    Abstract: KD224575HB D-35
    Text: mNEREX KD224575HB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 High-Beta Dual Darlington Transistor Module 75 Amperes/600 Volts Outline Drawing Dimensions A B inches 3.701 Max. 3.150 ±0.010 Millimeters Dimensions Inches


    OCR Scan     		KD224575HB Amperes/600 EIC20 d35 transistor KD224575HB D-35 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		900MHz Q62702-F1298 OT-23 D155144 flE35fc D12514S PDF

    L2735

    Abstract: D-34A i-box
    Text: LH543611/21 512x36x2/1024x36x2 Synchronous Bidirectional FIFO FEATURES FUNCTIONAL DESCRIPTION • The LH543611 and LH543621 contain two FIFO buff­ ers, FIFO #1 and FIFO #2. These operate in parallel, but in opposite directions, for bidirectional data buffering.


    OCR Scan     		LH543611/21 LH5420 LH543601, 512x36x2/1024x36x2 LH543611 LH543621 L2735 D-34A i-box PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMTECH CORP SfiE D 6 1 3 ^ 1 3 ^ 0 D 03003 470 DUAL POWER MOSFET’s IN HERMETIC 6 PIN ISOLATED PACKAGE SET SM6F151* SM6F251* SM6F351* SM6F451* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low


    OCR Scan     		SM6F151* SM6F251* SM6F351* SM6F451* T0254AA T0258AA FT0258AA HDS100 PDF