12AH-3
Abstract: 12A H3 12ah3 VEGA vega-lite 550 d2s diode series Lambda VEGA Lambda VEGA 750 diode d2s EN61010-1
Text: Vega-Lite 550 to 900W Multiple Output Modular Power Supply Suitable for higher volume applications 1-10 Wide Range Outputs With Adjustment Output Voltages From 1.8 - 56V Medical Approval Options MIL-STD-810 Shock and Vibration Ve g a F e a t u r e s a n d B e n e f i t s
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MIL-STD-810
EN61000-3-2
1-800-LAMBDA-4
12AH-3
12A H3
12ah3
VEGA
vega-lite 550
d2s diode series
Lambda VEGA
Lambda VEGA 750
diode d2s
EN61010-1
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BLX94C
Abstract: BLX94A BLX94
Text: L^E » N AMER PHILIPS/DISCRETE • bfc.53T31 D021b3E IAPX D3S BLX94A BLX94C J BLX94A IS MAINTENANCE TYPE U.H.F. POWER TRANSISTORS N-P-N silicon planar epitaxial transistors suitable fo r transmitting applications in class-A, B or C in the u.h.f. range fo r a nominal supply voltage up to 28 V . The transistors are resistance stabilized and tested
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BLX94A
D021b3E
BLX94C
BLX94C
---BLX94A
-BLX94C.
BLX94
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HD63265
Abstract: 5.25 floppy interface HD63265P HD63265FP FLOPPY DISK Clk16MHZ
Text: H D63265 -Floppy Disk Controller FDC HD63265 is a floppy disk controller (FDC) VLSI cir cuit which is capable of controlling u p to 3.5", 5.25", or 8" floppy disk drives receiving com m ands from a microprocessor in a 68 or 80-series m icrocom puter
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D63265
HD63265
80-series
ADE-602-001)
5.25 floppy interface
HD63265P
HD63265FP
FLOPPY DISK
Clk16MHZ
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NJU6511
Abstract: JUG-51 HJU6501 HJU6511 HJU651IB JUB501 JUG511 KJU6511XC NJU6511D v3160
Text: v4, D Vi li O < < < < < < < < < • íi t -i i r S ü o d s j a % 0 \ T A O 'S mis.fi y mti t & æ ü & t s mizi s h * ¿ > . \ h » t * IÍ»S0IAI-0* mí» diHo/doi • • EE <1 I t ^ A » £ a - V ¡5¡¡f M » M i Ii 8 V- ^ Hl ¡ffi • * vi • I
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NJU6511
JUG511
JUB501
KJU6511XC
HJU6501
MJUB511
NJU6501
640X200
JUG-51
HJU6511
HJU651IB
JUG511
KJU6511XC
NJU6511D
v3160
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HD63265P
Abstract: HD63265 765 fdc HD63265FP d2s 28 diode d3s diode 41ES ABE 802 PVDX FDD service
Text: H D63265-F lo p p y D isk C o n tro lle r FD C HD63265 is a floppy disk controller (FDC) VLSI cir cuit w hich is capable of controlling up to 3.5", 5.25", or 8" floppy disk drives receiving com m ands from a m icroprocessor in a 68 or 80-series microcomputer
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D63265-
HD63265
80-series
HD63265
130pF
ADE-602-001)
HD63265P
765 fdc
HD63265FP
d2s 28 diode
d3s diode
41ES
ABE 802
PVDX
FDD service
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d3s 58
Abstract: D3S 50
Text: Bi - Directional trigger - DIACS. T h e plastic m aterial carries U /L recognition 94 V-O. ELECTRICAL CHARACTERISTICS Tc B erak o v er V oltage = 25 °C B erakover V oltage Dynam ic B reakover Peak Pulse Symm etry B reakback C u rren t C urrent for lOjus
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DO-35.
DO-41.
DD547T
d3s 58
D3S 50
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E-BA8
Abstract: ISOS refer STP2104
Text: S un M ic ro electro nics July 1997 SEC DATA SHEET SBus-to-EBus Controller D e s c r ip t io n The STP2014 SBus-to-EBus Controller SEC is an interface between the SBus and the EBus that is used for slow I/O devices such as TOD, EPROM, serial port, and keyboard/mouse. The STP2014 also houses the inter
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STP2014
S1T2014
STP2104
STP2014
E-BA8
ISOS refer
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BYY 56
Abstract: byy 57 1200 OA61 BYY57 BYS 98-50 byy57e BYy5758
Text: Low Power Diodes Rectifier diodes V rrm V Ifsm Ifavm trr outline A 10 ms, A °c /w lo Type 100 6 - 150 151 V br A 1 0 ms, Ifsm Ifavm tvj max outline A A °C C a th o r iA tv, ~ tvj max D 6/ 1200. 1600 151 Controlled avalanche diodes T ype VrrM V tA = 4 5 °C
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--i-76-
-28minâ
57/58-E
BYY 56
byy 57 1200
OA61
BYY57
BYS 98-50
byy57e
BYy5758
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D3S 50
Abstract: D3S 57
Text: VG/CA-B Connector Dim ensions Wall Mounting Receptacle CA3100E-B-08 Flange with threaded holes CA3100E-B-09 (Flange with through holes) CA3100E-B-08, -09 designates a wall mounting receptacle, with 90° endbell, cable clam p and telescoping bushing. Modifications see page 10
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CA3100E-B-08
CA3100E-B-09
CA3100E-B-08,
CA3100E10SL-*
CA3100E12S-*
CA3100E14S-*
CA3100E16S-*
CA3100E16-*
OOE18-*
CA3100E20-*
D3S 50
D3S 57
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MTO-3P
Abstract: 2SK2177 SK139 ITO-220 FTO-220
Text: N-Channel, Enhancement type Absolute Maximum Ratings Type No. Tch [“C] V d ss [V] Electrical Characteristics V gss Id Pt [V] [A] [W] ? S K 1 391 40 6 13&2 25 1393 10 Î3 0 4 250 1395 1396 13 9 7 ±30 150 2062 50 30 R d s on Ciss Crss ton toff (max) (typ)
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SK1391
O-220
ITO-220
STO-220
FTO-220
MTO-3P
2SK2177
SK139
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T0220F
Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
Text: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)
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2SK1082
2SK962
2SK1217
T03PF
2SK1512
2SK1511
2SK1008-01
T0220
2SK1010-01
T0220F
T0-220F
2SK1084
2SK1388
2MI200F-025
2sk1018
2SK1390
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2SK1217
Abstract: 2SK962 2SK1512 MOSFET Modules 2SK1008-01 2SK1010-01 2SK1012-01 2SK1082 2SK1511 2SK1171
Text: COLLHER SEMICONDUCTOR INC 22307^2 ODGISTT OTT « C O L MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)
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2SK1082
2SK962
2SK1217
T03PF
2SK1512
2SK1511
2SK1008-01
T0220
2SK1010-01
MOSFET Modules
2SK1012-01
2SK1171
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2SK1082
Abstract: T0220F 2SK1512 T0-220F 2SK1018-01 2SK1084 2SK1388 2SK1217 2SK1090 2SK1276
Text: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss 0 0 900 900 900 900 1000 C h aracteristics (Tc=25°C)
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2SK1082
2SK962
2SK1217
T03PF
2SK1512
2SK1511
2SK1008-01
T0220
2SK1010-01
T0220F
T0-220F
2SK1018-01
2SK1084
2SK1388
2SK1090
2SK1276
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Untitled
Abstract: No abstract text available
Text: International IO R Rectifier • • • • • PD - 9.1435B PRELIMINARY IRF7311 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Vdss = 20 V ^DS on = 0.029Î2 Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier
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1435B
IRF7311
char25
C-119
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7975
Abstract: LA 7673 SW1616M16A IC la 7673
Text: H D L T E K n r Features • • • • • • HT1616/HT1616C/HT1617 Timer with Dialer Interface P a te n t N um ber: 84545 R.O.C. P a te n t P en d in g: 08/214, 079 (U.S.A.) • • • • O perating voltage: 1.2V-1.7V Low operating current: 4|_iA typ.
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HT1616/HT1616C/HT1617
12-hour
24-hour
32768Hz
HT1616/HT1616C)
SW1616M16
HT1616/H
T1616C/HT1617
7975
LA 7673
SW1616M16A
IC la 7673
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 5839 M o n o lith ic L in e a r 1C L88M00T Series 3.3 to 12 V, 0.5 A Low Dropout Voltage Regulator Package Dimensions Overview unit : mm The L88MOOT Series are low dropout voltage regulator ICs with output current of 0.5 A. Because they can operate with a
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L88M00T
L88MOOT
3103-TP-3H
L88M33T:
L88M05T:
L88M09T:
L88M12T:
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PD916
Abstract: No abstract text available
Text: PD-9.1615A International TOR Rectifier FA38SA50LC HEXFET Power MOSFET • Fully Isolated Package • Easy to Use and Parallel • Low On-Resistance • Dynamic dv/dt Rating • Fully Avalanche Rated • Simple Drive Requirements • Low Drain to Case Capacitance
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AFM02N5-00
Abstract: 2b25 gm 4511 4511 gm AD004T2-00 AD004T2-11 AE002M2-29 VP 16029 AK006R2-01 AK006R2-10
Text: Low Noise GaAs MESFET Chip AFM02N5-00 Dim ensions in Microns Thickness = 100 Features Low Noise Figure, 1.0 dB at 12 GHz High Associated Gain, 9.5 dB at 12 GHz High MAG, > 12 dB at 12 G H z 0.25 am Ti/Pt/Au Gates Passivated Surface Description Alpha’s AFM 02N 5-00 low noise G aAs M E S FE T Chip
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AFM02N5-00
AFM02N5-00
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
2b25
gm 4511
4511 gm
AD004T2-00
AD004T2-11
AE002M2-29
VP 16029
AK006R2-01
AK006R2-10
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74S590
Abstract: 74S59X
Text: PRELIMINARY CYM74A590 CYM74S590 CYM74S591 VLSI 82C590 Chip Set Level II Cache Module Family Features Functional Description • Pin-compatible secondary cache module family • Asynchronous CYM74Â590 or syn chronous (CYM74S590, CYM74S591) configurations with presence and con
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CYM74A590
CYM74S590
CYM74S591
82C590
CYM74
CYM74S590,
CYM74S591)
P54C-based
160-position
74S590
74S59X
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2D 1002 diode
Abstract: d3s marking DIODE D3S 90 MARKING tAN SOT-23 diode MARKING tAN SOT-23
Text: PD - 9 .1508C International IOR Rectifier IR L M S 1 5 0 3 HEXFET Power MOSFET • Generation V Technology • Micro6 Package Style • Ultra Low Rds on • N-Channel MOSFET V dss = 3 0 V RDS(on) = 0 .1 0 Î2 Description Fifth Generation H EXFETsfrom International Rectifier
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OT-23.
2D 1002 diode
d3s marking
DIODE D3S 90
MARKING tAN SOT-23 diode
MARKING tAN SOT-23
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BFG96
Abstract: No abstract text available
Text: P hilips Sem iconductor; bbS3T31 0031ST2 553 M A P X Product specification BFG96 NPN 5 GHz wideband transistor bit N AUER PHILIPS/5ISCRETE DESCRIPTION » PINNING NPN transistor in a 4-lead dual-emitter plastic SOU 03 envelope. DESCRIPTION PIN It is designed for application in
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bbS3T31
0031ST2
BFG96
BFG32.
OT103.
BFG96
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434B
Abstract: 82430VX
Text: CYM74P430B/431B CYM74P434B/435B PRELIMINARY Intel 82430FX,HX,VX PCIset Pipelined L2 Cache Modules * 160-position connector is compatible with all four Keying Options defined in COAST 3.0. • 3.3V compatible inputs/data outputs Features • Secondary cache modules that are
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CYM74P430B/431B
CYM74P434B/435B
82430FX
82430FX,
82430HX,
82430VX
32Kx32
160-position
CYM74P434B
256-Kbyte)
434B
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DIODE D3S 90
Abstract: No abstract text available
Text: P D - 9 .1 6 4 4 Internationa lO R Rectifier IRL1004S/L PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Surface Mount IRL1004S • Low-profile through-hole (IRL1004L) • Advanced Process Technology • Surface Mount • Ultra Low On-Resistance
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IRL1004S/L
IRL1004S)
IRL1004L)
DIODE D3S 90
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DIODE d3s 57
Abstract: D3S 57 diode
Text: PD - 9.1362A International TOR Rectifier IRFI 520 N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Description
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