2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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tip122 tip127 audio amp schematic
Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001 SCILLC, 2001 Previous Edition 1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.
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DL111/D
July-2001
r14525
tip122 tip127 audio amp schematic
mje521 equivalent
BJT small signal low power BD139
MJ15003 300 watts amplifier
2N3773 pinout
transistor mj11032 equivalent
MJ11028 transistor equivalent
2n3055 IC
2N3773 audio amplifier diagram
2n222 TRANSISTOR use as audio amplifier
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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BSH103 MARKING
Abstract: TRANSISTOR SMD MARKING CODE DK BSH103 TRANSISTOR SMD CODE 339 marking code UL SMD Transistor 339 marking code SMD transistor MBK504 smd transistor 547 transistor smd .PB 8 transistor smd PB 8
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH103 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1998 Jan 30 File under Discrete Semiconductors, SC13b 1998 Feb 11 Philips Semiconductors Product specification
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M3D088
BSH103
SC13b
MAM273
BSH103
BSH103 MARKING
TRANSISTOR SMD MARKING CODE DK
TRANSISTOR SMD CODE 339
marking code UL SMD Transistor
339 marking code SMD transistor
MBK504
smd transistor 547
transistor smd .PB 8
transistor smd PB 8
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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philips resistor 2322-153
Abstract: philips e3 SOT171 BLV97CE IEC134 ferroxcube wideband hf choke transistor C 548 B Philips
Text: bSE D Philips Semiconductors Product specification date of issue March 1993 711002b □□b30bö 75b IPHIN BLV97CE Data sheet status WM UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve high power gain • Ballasting resistors for an optimum
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711002b
BLV97CE
OT171
philips resistor 2322-153
philips e3
SOT171
BLV97CE
IEC134
ferroxcube wideband hf choke
transistor C 548 B Philips
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Untitled
Abstract: No abstract text available
Text: MTV6N100E Designer’s Data Sheet TMOS E−FET.™ Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This
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MTV6N100E
MTV6N100E/D
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4963 MOSFET
Abstract: 6N diode
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTV6N100E TMOS E-FET ™ Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS on = 1-5 OHM N-Channel Enhancement-Mode Silicon Gate The D3PAK package has the capability of housing the largest chip
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0E-05
0E-04
0E-02
0E-01
4963 MOSFET
6N diode
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mic59p50
Abstract: No abstract text available
Text: MIC59P50 I C I b 8-Bit Parallel-Input Protected Latched Driver L General Description Features The MIC59P50 parallel-input latched driver is a high-voltage 80V , high-current (500mA) integrated circuit comprised of eight CMOS data latches, a bipolar Darlington transistor
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MIC59P50
MIC59P50
500mA)
IC5801,
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2SD536
Abstract: N 555 2SB681 LEM 543 2sb601 2SB552 2SB598 Lem LT 80 p cl 100 hie
Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SB600
2SB601
tc-25
2SD536
N 555
2SB681
LEM 543
2SB552
2SB598
Lem LT 80 p
cl 100 hie
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ceramic disc capacitor 100nf 104
Abstract: C1-C18 TT 2222 npn capacitor 100nf multilayer SOT171 transistor tt 2222 BLV97CE
Text: N AMER P H I L I P S / D I S C R E T E bTE D I Philips Semiconductors ÜET1 7 1 E 7 fl B A P X BLV97CE Data sheet status bbSBTBl Product specification UHF power transistor date of issue March 1993 FEATURES QUICK REFERENCE DATA • Internal input matching to achieve
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BLV97CE
bbS3T31
OT171
ceramic disc capacitor 100nf 104
C1-C18
TT 2222 npn
capacitor 100nf multilayer
SOT171
transistor tt 2222
BLV97CE
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CGD942C
Abstract: No abstract text available
Text: CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 01 — 7 June 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.
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CGD942C
OT115J
CGD942C
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CGD942C
Abstract: No abstract text available
Text: CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 3 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.
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CGD942C
OT115J
CGD942C
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CGD944C
Abstract: No abstract text available
Text: CGD944C 870 MHz, 25 dB gain power doubler amplifier Rev. 3 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.
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CGD944C
OT115J
CGD944C
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CGY1047
Abstract: No abstract text available
Text: CGY1047 1 GHz, 27 dB gain GaAs push-pull amplifier Rev. 2 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Heterojunction Field Effect Transistor (HFET) GaAs dies.
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CGY1047
OT115J
2002/95/EC,
CGY1047
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CGD944C
Abstract: No abstract text available
Text: CGD944C 870 MHz, 25 dB gain power doubler amplifier Rev. 01 — 6 June 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.
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CGD944C
OT115J
CGD944C
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CGD944C
Abstract: No abstract text available
Text: CGD944C 870 MHz, 25 dB gain power doubler amplifier Rev. 02 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.
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CGD944C
OT115J
CGD944C
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CGY1032
Abstract: No abstract text available
Text: CGY1032 1 GHz, 32 dB gain GaAs push-pull amplifier Rev. 1 — 10 February 2011 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Heterojunction Field Effect Transistor (HFET) GaAs dies.
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CGY1032
OT115J
2002/95/EC,
CGY1032
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CGY1047
Abstract: No abstract text available
Text: CGY1047 1 GHz, 27 dB gain GaAs push-pull amplifier Rev. 01 — 30 July 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Heterojunction Field Effect Transistor (HFET) GaAs dies.
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CGY1047
OT115J
2002/95/EC,
CGY1047
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A114E
Abstract: CGY1041 22-A114-E
Text: CGY1041 1 GHz, 21 dB gain GaAs push-pull amplifier Rev. 1 — 10 February 2011 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Heterojunction Field Effect Transistor (HFET) GaAs dies.
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CGY1041
OT115J
2002/95/EC,
A114E
CGY1041
22-A114-E
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CGY1049
Abstract: No abstract text available
Text: CGY1049 1 GHz, 29 dB gain GaAs push-pull amplifier Rev. 1 — 10 February 2011 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Heterojunction Field Effect Transistor (HFET) GaAs dies.
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CGY1049
OT115J
2002/95/EC,
CGY1049
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