nec 2562
Abstract: 1000w audio amp circuit diagram block diagram duplex NL2100 1000w audio power amp circuit diagram si 810 MH-4002 audio amp 1000w 1000w audio amp nec 40 nm
Text: PRELIMINARY DATA SHEET TRANSCEIVER NL2100 HIGH-SPEED POF/HPCF DATA LINK TRANSCEIVER MODULE COMPLIANT WITH ATM FORUM SPECIFICATIONS DESCRIPTION The NL2100 is a data link transceiver module for high-speed data transmission up to 156 Mb/s over 50 meters POF and 100 meters (HPCF), compliant with ATM Forum specifications. The transceiver contains a 650 nm LED
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NL2100
NL2100
IEEE1394
nec 2562
1000w audio amp circuit diagram
block diagram duplex
1000w audio power amp circuit diagram
si 810
MH-4002
audio amp 1000w
1000w audio amp
nec 40 nm
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nec 358 amplifier
Abstract: NEC 426 nec 1678
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE650R479A 0.4 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power CW with high
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NE650R479A
NE650R479A
NE6500379A
nec 358 amplifier
NEC 426
nec 1678
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Untitled
Abstract: No abstract text available
Text: FLEX 10K Embedded Programmable Logic Family May 1998. ver. 3.11 FeatU res Data Sheet • ■ The industry's first embedded programmable logic device PLD family, providing system integration in a single device Embedded array for implementing megafunctions, such as
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PC8130TA
Abstract: Mini 50 Pin IDE
Text: PRELIMINARY DATA SHEET_ IV IF f " / BIPOLAR ANALOG INTEGRATED CIRCUIT / /¿PC 8 1 3 0 T A , /iP C 8 1 3 1 T A -1 5 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE DESCRIPTION The ¿¿PC8130TA and ¿¿PC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier.
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uPC8130TA
uPC8131TA
/iPC8119T
/iPC8120T
PC8130TA
Mini 50 Pin IDE
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1T26 DIODE
Abstract: altera flex10k Diode SY 356
Text: FLEX 10K Embedded Programmable Logic Family May 1883. ver. 3.11 Features. ÖateSheet S8 £8 The industry's first embedded programmable logic device PLD family, providing system integration in a single device Embedded array for implementing megafunctions, such as
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mec oscillator
Abstract: P11997E 1SV210 2.2 GHz local oscillator ic 6wn capacitor
Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT MIXER+OSCILLATOR SILICON MMIC FOR FREQUENCY DOWNCONVERTER OF L BAND WIRELESS RECEIVER DESCRIPTION ¿¡PC2756TB is a silicon monolithic integrated circuit designed as L band frequency downconverter for receiver
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uPC2756TB
/PC2756TB
20GHz
mec oscillator
P11997E
1SV210
2.2 GHz local oscillator ic
6wn capacitor
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7805 nec voltage regulator
Abstract: NEC JAPAN 7805 7805 nec nec 7805 nec 7805 ki 30 if
Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT _ ¿ t P C 3 2 1 1 G R AGC AMPLIFIER FOR DIGITAL CATV RETURN PASS DESCRIPTION jiPC3211GR is a silicon monolithic integrated circuit designed as AGC amplifier for digital CATV systems. This IC
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uPC3211GR
20-pin
7805 nec voltage regulator
NEC JAPAN 7805
7805 nec
nec 7805
nec 7805 ki 30 if
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NEC 2561
Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049
Text: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym
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NE72218
NE72218-T1
NE72218-T2
NEC 2561
nec 2561 le
NEC 2561 LE 301
sem 2105 16 pin
saa 1074
SAA 1061
nec 2561 4 pin
cp 1099
c 945 p 331
saa 1049
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT ¿¿PC3211GR AGC AMPLIFIER FOR DIGITAL CATV RETURN PASS DESCRIPTION /¿PC3211GR is a silicon monolithic integrated circuit designed as AGC amplifier for digital CATV systems. This IC
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PC3211GR
PC3211GR
20-pin
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CH023
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¿¿PD2 3 C 3 2 0 8 2 L 32M-BIT MASK PROGRAMMABLE ROM 2M-WORD BY 16-BIT WORD MODE / 1 M-WORD BY 32-BIT (DOUBLE WORD MODE) PAGE ACCESS MODE Description The /¿PD23C32082L is a 33,554,432 bits mask-programmable ROM.The wordorganization is selectable (WORD
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32M-BIT
16-BIT
32-BIT
uPD23C32082L
PD23C32082L
70-pin
CH023
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ba37 diode
Abstract: diode aj41 EPF10K20 EPF10K10 EPF10K10A EPF10K30 EPF10K30A EPF10K40 EPF10K50 EPF10K50V
Text: FLEX 10K Embedded Programmable Logic Family O ctober 1998. ver. 3.13 Features. Data Sheet * H B r*^te industry's first embedded programmable logic device PLD family, providing system integration in a single device Embedded array for implementing megafunctions, such as
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EPF10K50V,
EPF10K70,
EPF10K100A
EPF10K30A,
EPF10K100B,
EPF10K250A
240-pin
EPF10K30A
ba37 diode
diode aj41
EPF10K20
EPF10K10
EPF10K10A
EPF10K30
EPF10K40
EPF10K50
EPF10K50V
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Untitled
Abstract: No abstract text available
Text: FLEX 10K Embedded Programmable Logic Family Data Sheet May 1998. ver. 3.10 Features. * r*^te industry's first embedded programmable logic device PLD H B family, providing system integration in a single device Embedded array for implementing megafunctions, such as
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Untitled
Abstract: No abstract text available
Text: FLEX 8000 Programmable Logic Device Family S e p te m b e r 1S9S» v e r. 9.11 Features. D ata S h e e t Low-cost, high-density, register-rich CMOS programmable logic device PLD family (see T;?bie 1) 2,500 to 16,000 usable gates 282 to 1,500 registers
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4532CC726 32M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4532CC726 is a 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of
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MC-4532CC726
32M-W
72-BIT
MC-4532CC726
uPD45128841
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IC3208
Abstract: P12315EJ2V0DS00
Text: DATA SHEET GaAs INTEGRATED CIRCUIT ¿iPG105B-1 S-BAND LOW NOISE AMPLIFIER DESCRIPTION The ¿tPG105B-1 GaAs Am plifier has a very low noise characteristics in the S-band. This device has 3 stages FET amplifiers to achieve high linear gain. This amplifier is ideal for microwave communication system and the
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uPG105B-1
tPG105B-1
/xPG105B-1
IC3208
P12315EJ2V0DS00
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT _ /XPD23C64040L 64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT BYTE MODE / 4M-WORD BY 16-BIT(WORD MODE) PAGE ACCESS MODE Description The /¿PD23C64040L is a 67,108,864 bits mask-programm able ROM. The word organization is selectable (BYTE
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uPD23C64040L
64M-BIT
16-BIT
PD23C64040L
48-pin
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transistor NEC D 587
Abstract: NEC D 587 TRANSISTOR R44 z 607 ma 2SC3585 transistor 5951 nec 1041
Text: DATA SHEET SILICON TRANSISTOR 2SC3585 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR DESCRIPTION P A C K A G E DIM ENSIO NS Units: mm The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.
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2SC3585
2SC3585
transistor NEC D 587
NEC D 587
TRANSISTOR R44
z 607 ma
transistor 5951
nec 1041
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT //PC1652G SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT WIDE BAND AMPLIFIER DESCRIPTION The 652G PIN CONNECTIONS is a silicon monolithic integrated circuit especially designed as a wide band amplifier convering HF band
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uPC1652G
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ // PD23C128040L 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The ^¡PD23C128040L is a 134,217,728 bits mask-programmable ROM. The word organization is selectable (BYTE
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PD23C128040L
128M-BIT
16M-WORD
16-BIT
PD23C128040L
48-pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT ¡ lP D 2 3 C 6 4 0 0 0 A 64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT BYTE MODE / 4M-WORD BY 16-BIT(WORD MODE) Description The /XPD23C64000AL is a 67,108,864 bits mask-programmable ROM. The word organization is selectable (BYTE
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64M-BIT
16-BIT
uPD23C64000AL
/xPD23C64000AL
44-pin
48-pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ // PD23C128000L 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) Description The ^¡PD23C128000L is a 134,217,728 bits mask-programmable ROM. The word organization is selectable (BYTE
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PD23C128000L
128M-BIT
16M-WORD
16-BIT
PD23C128000L
48-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC2586 is an NPN silicon epitaxial transistor designed ^ 9 .4 MAX. for UHF-band medium pow er amplifiers.
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2SC2586
2SC2586
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d1072
Abstract: 2SK2541 MEI-1202 MF-1134
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWINGS in millimeter The 2SK2541 is a switching device which can be driven directly by a 1.5 V power source. The M O S FET has excellent switching characteristics and is suitable
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2SK2541
2SK2541
d1072
MEI-1202
MF-1134
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT //PG503B 9 GHz DIVIDE-BY-4 PRESCALER DESCRIPTION The //PG503B is a GaAs divide-by-4 prescaler capable of operating up to 9 GHz. It is intend to be used in the frequency synthesizers of microwave application systems and measurement
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uPG503B
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