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    DB 22 AR TRANSISTOR SMD Search Results

    DB 22 AR TRANSISTOR SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DB 22 AR TRANSISTOR SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TL113

    Abstract: tl201 TL217 w3 smd transistor transistor c111
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200


    Original     		PDF PTFA220081M PTFA220081M PG-SON-10 TL113 tl201 TL217 w3 smd transistor transistor c111

    capacitor marking c106

    Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200


    Original     		PDF PTFA220081M PTFA220081M capacitor marking c106 NFM18Ps105 TL217 NFM18PS105R0J3 TL222 Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA

    c102 TRANSISTOR

    Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200


    Original     		PDF PTFA220081M PTFA220081M PG-SON-10 c102 TRANSISTOR c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113

    c102 TRANSISTOR

    Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113

    TRANSISTOR C802

    Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104

    transistor 2xw

    Abstract: transistor table RF Bipolar Transistor smd rf transistor marking
    Text: T ar ge t D at a S he et , R e v . 1. 1 , D ec e m be r 2 00 8 BGB707L7ESD T ar ge t D at a S i G e :C W i d e b an d M M I C L N A w i t h In t e g r a t e d E S D P r o t e c t i on S m a l l S i g n a l D i s c r et e s Edition 2008-12-10 Published by Infineon Technologies AG,


    Original     		PDF BGB707L7ESD transistor 2xw transistor table RF Bipolar Transistor smd rf transistor marking

    transistor c735

    Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PDF PTFA220041M PTFA220041M PG-SON-10 transistor c735 ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103

    TL225

    Abstract: ATC100A6R2CW150X
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 TL225 ATC100A6R2CW150X

    TRANSISTOR C802

    Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw

    C801

    Abstract: 1/db3 c801
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power ampliier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 C801 1/db3 c801

    TLE4284DV

    Abstract: TLE4284DV50
    Text: Voltage Regulator TLE 4284 Features • • • • • • voltage regulator with Adjustable, 1.5V, 1.8V, 2.6V, 3.3 V, 5.0V output voltage 1.0 A output current Low drop voltage, typ. 1 V Short circuit protected Overtemperature protected Wide operating range up to 40 V


    Original     		PDF P-TO252-3-1 P-TO252-3-1, P-TO2523-11 TLE4284DV TLE4284DV50

    TLE4284DV15

    Abstract: P-TO252 TLE4284DV TLE4284DV50 TO252 rthjc DV18 P-TO252-3-11 TLE4284 Q67006-A9691 SMD NF
    Text: Voltage Regulator TLE 4284 Features • • • • • • voltage regulator with Adjustable, 1.5V, 1.8V, 2.6V, 3.3 V, 5.0V output voltage 1.0 A output current Low drop voltage, typ. 1 V Short circuit protected Overtemperature protected Wide operating range up to 40 V


    Original     		PDF P-TO252-3-1 P-TO252-3-1, P-TO252-3-11 TLE4284DV15 P-TO252 TLE4284DV TLE4284DV50 TO252 rthjc DV18 TLE4284 Q67006-A9691 SMD NF

    Untitled

    Abstract: No abstract text available
    Text: Voltage Regulator TLE 4284 Features • • • • • • voltage regulator with Adjustable, 1.5V, 1.8V, 2.6V, 3.3 V, 5.0V output voltage 1.0 A output current Low drop voltage, typ. 1 V Short circuit protected Overtemperature protected Wide operating range up to 40 V


    Original     		PDF P-TO252-3-1 P-TO252-3-1, P-TO2523-11

    LM7805

    Abstract: LM7805 smd 8 pin PTF080901 PTF080901E marking us capacitor pf l1 philips smd 1206 resistor SMD 1206 RESISTOR 100 OHMS smd marking f2 smd marking l5 transistor smd marking ND
    Text: PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF080901 PTF080901 LM7805 LM7805 smd 8 pin PTF080901E marking us capacitor pf l1 philips smd 1206 resistor SMD 1206 RESISTOR 100 OHMS smd marking f2 smd marking l5 transistor smd marking ND

    SMD r801

    Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,


    Original     		PDF PTFA220041M PTFA220041M SMD r801 TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223

    c102 TRANSISTOR

    Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PDF PTFA220041M PTFA220041M PG-SON-10 c102 TRANSISTOR LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217

    c102 TRANSISTOR

    Abstract: tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR PTFA220041M TL108 tl111
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PDF PTFA220041M PTFA220041M c102 TRANSISTOR tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR TL108 tl111

    PEB22521

    Abstract: AR20 BA22 BA23 z73 trigger transformer k3210
    Text: D ata S he et, D S7 , A pr il 20 00 ANIC A n a lo g N e t w o r k I n te r fa c e C ir c u it PSB 4450 Version 1.2 PSB 4451 Version 1.2 Transceivers N e v e r s t o p t h i n k i n g . Edition 2000.04.07 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF D-81541 PEB22521 AR20 BA22 BA23 z73 trigger transformer k3210

    RJ45 datasheet 8P8C

    Abstract: IBM simm 30-pin smd LD9 smd transistor ld3 motorola 30-pin simm memory dynamic 74ACT14D 74ACT74D AMD PCMCIA Flash Memory Card PC MOTHERBOARD CIRCUIT diagram of LG computers LED SMD 1206 INFRA RED
    Text: Freescale Semiconductor, Inc. MOTOROLA Motorola Semiconductor Israel Ltd. MICROPROCESSOR & MEMORY Freescale Semiconductor, Inc. CT OR , IN C.2 006 TECHNOLOGIES GROUP MIC ON DU MPC860ADS User’s Manual AR CH IVE DB YF RE ES CA LE SE Board Revision - ENG


    Original     		PDF MPC860ADS MPC860ADS, RJ45 datasheet 8P8C IBM simm 30-pin smd LD9 smd transistor ld3 motorola 30-pin simm memory dynamic 74ACT14D 74ACT74D AMD PCMCIA Flash Memory Card PC MOTHERBOARD CIRCUIT diagram of LG computers LED SMD 1206 INFRA RED

    PTF080901A

    Abstract: 080901E smd marking PTF ptf080901e resistor 1 ohms philips resistor LDMOS 90W
    Text: Preliminary PTF 080901 LDMOS RF Power Field Effect Transistor 90 W, 860–960 MHz Description Key Features The PTF 080901 is a 90–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF

    fr53

    Abstract: FR52 LX41 ic ntp- 3000 Z31 SMD Innovative Processing AG PSB 4450 datasheet BA23 PEB22521 P-TSSOP-28-1
    Text: D at a She et , DS8 , Sep te mb er 20 00 ANIC A n a lo g N e t w o r k I n te r fa c e C ir c u it PSB 4450 Version 1.2 PSB 4451 Version 1.2 W ir e d C o m mu n i ca t io n s N e v e r s t o p t h i n k i n g . Edition 2000.09.04 Published by Infineon Technologies AG,


    Original     		PDF D-81541 fr53 FR52 LX41 ic ntp- 3000 Z31 SMD Innovative Processing AG PSB 4450 datasheet BA23 PEB22521 P-TSSOP-28-1

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    DB 22 AR transistor smd

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 -2 .0 GHz frequency range. It has been specifically designed for use in Personal Communications Network PCN base station and


    OCR Scan     		PDF MRF6401 MRF6401PHT/D IS21I IS12I DB 22 AR transistor smd

    lm 9805

    Abstract: LM 886 IC chip transistor smd za 28 ferroxcube 4322 tantalum 106 h el 817 LM 858 IC chip BO 536 OF sk 733
    Text: DISC RETE S E M IC O N D U C TO R S A SlnlEET BLV2047 UHF power transistor 1998 Mar 10 Product specification Supersedes data of 1998 Jan 28 File under Discrete Semiconductors, SC08b Philips Semiconductors PHILIPS PHILIPS Phi l i ps S e m i c o n d u c t o r s


    OCR Scan     		PDF BLV2047 SC08b OT468A 125108/00/04/pp12 lm 9805 LM 886 IC chip transistor smd za 28 ferroxcube 4322 tantalum 106 h el 817 LM 858 IC chip BO 536 OF sk 733