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    DD1200S33 Price and Stock

    Infineon Technologies AG DD1200S33K2CNOSA1

    DIODE MODULE GP 3300V 1200A
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    Infineon Technologies AG DD1200S33K2CB3NOSA1

    DIODE MOD GP 3300V 1200A AIHV130
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    Infineon Technologies AG DD1200S33KL2CB5NOSA1

    DIODE MODULE GP 3300V 1200A
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    Avnet Americas DD1200S33KL2CB5NOSA1 Tray 4 Weeks 1
    • 1 $1267.82
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    • 100 $1191.75
    • 1000 $1077.65
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    Rochester Electronics DD1200S33KL2CB5NOSA1 17 1
    • 1 $1267.82
    • 10 $1267.82
    • 100 $1191.75
    • 1000 $1077.65
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    Infineon Technologies AG DD1200S33K2CB3S2NDSA1

    DIODE MOD GP 3300V 1200A AIHV130
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    DD1200S33 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DD1200S33K1 Eupec DIODE SWITCHING DIODE 3300V 1200A Original PDF
    DD1200S33K2 Eupec IGBT-Module Original PDF
    DD1200S33K2 Infineon Technologies Diode, IGBT-Modules Original PDF
    DD1200S33K2C Eupec Diode Inverter Module Original PDF
    DD1200S33K2C Infineon Technologies IGBT Modules up to 3300V Diodes; Package: A-IHM130-1; IF (typ): 1,200.0 A; Configuration: Diode Modules; Technology: IGBT2 Standard; Housing: IHV 130 mm; Features: -; Original PDF
    DD1200S33K2CB3NOSA1 Infineon Technologies MODULE DIODE IHV130-3 Original PDF
    DD1200S33K2CB3S2NDSA1 Infineon Technologies MODULE DIODE IHV130-3 Original PDF
    DD1200S33K2CNOSA1 Infineon Technologies Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE MOD 3300VA-IHV130-3-1 Original PDF
    DD1200S33KL2C_B5 Eupec Diode Inverter Module Original PDF
    DD1200S33KL2C_B5 Infineon Technologies IGBT Modules up to 3300V Diodes; Package: A-IHM130-1; IF (typ): 1,200.0 A; Configuration: Diode Modules; Technology: IGBT2 Low Loss; Housing: IHV 130 mm; Features: 10.2 kV Insulation Voltage; Original PDF
    DD1200S33KL2CB5NOSA1 Infineon Technologies Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE MOD 3300V A-IHV130-6-1 Original PDF

    DD1200S33 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DD1200S33K2C

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 23 % 7 28 & 1 5*" & -. * & :


    Original     		PDF DD1200S33K2C DD1200S33K2C

    M8 3F

    Abstract: No abstract text available
    Text: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1


    Original     		PDF DD1200S33KL2C M8 3F

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1


    Original     		PDF DD1200S33KL2C

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1


    Original     		PDF DD1200S33KL2C

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 23 % 7 28 & 1 5*" & -. * & :


    Original     		PDF DD1200S33K2C

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD1200S33KL2C_B5 VorläufigeDaten PreliminaryData Diode,Wechselrichter/Diode,Inverter HöchstzulässigeWerte/MaximumRatedValues PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage


    Original     		PDF DD1200S33KL2C

    DD1200S33K2C

    Abstract: FZ1200R33KF2C BC 2500 ZL 8
    Text: Technische Information / technical information DD1200S33K2C IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ &' *+ &' ( )*+ % / /+ $ % 4(! 6 17 ,- ( 9 ,8 4 ( ! 8 &' ( ! )*+ &' ( ! )*+ < ,-.


    Original     		PDF DD1200S33K2C DD1200S33K2C FZ1200R33KF2C BC 2500 ZL 8

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DD1200S33K2C 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C Tvj = -25°C 连续正向直流电流


    Original     		PDF DD1200S33K2C

    diode sb 5400

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD1200S33KL2C_B5 VorläufigeDaten PreliminaryData Diode,Wechselrichter/Diode,Inverter HöchstzulässigeWerte/MaximumRatedValues PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage


    Original     		PDF DD1200S33KL2C diode sb 5400

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DD1200S33K2C 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C Tvj = -25°C 连续正向直流电流


    Original     		PDF DD1200S33K2C

    IEC61140

    Abstract: 10 kw igbt inverter sb 5400 DD1200S33KL2C_B5 IRF 810
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DD1200S33KL2C_B5 初步数据 PreliminaryData 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C Tvj = -25°C


    Original     		PDF DD1200S33KL2C IEC61140 10 kw igbt inverter sb 5400 DD1200S33KL2C_B5 IRF 810

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 23 % 7 28 & 1 5*" & -. * & :


    Original     		PDF DD1200S33K2C

    diode sb 5400

    Abstract: sb 5400
    Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules DD1200S33KL2C_B5 暫定データ PreliminaryData Diodeインバータ/Diode,Inverter 最大定格/MaximumRatedValues ピーク繰返し逆電圧


    Original     		PDF DD1200S33KL2C diode sb 5400 sb 5400

    DD1200S33K2C

    Abstract: No abstract text available
    Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules DD1200S33K2C Diodeインバータ/Diode,Inverter 最大定格/MaximumRatedValues ピーク繰返し逆電圧 Repetitivepeakreversevoltage Tvj = 25°C


    Original     		PDF DD1200S33K2C DD1200S33K2C

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $32F5F361F3D132214DDDC 2313FF36134%62332364C3 &'6 6 *+ &'6(6 )*+


    Original     		PDF DD1200S33K2C 03265F 1231423567896AB2C3D6EF32

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 23 % 7 28 & 1 5*" & -. * & :


    Original     		PDF DD1200S33K2C

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information DD1200S33K2C IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values # %& ' * %& ' ()* $ / /* # $ 4'! 6 17 +, ' 9 +8 4 ' !


    Original     		PDF DD1200S33K2C

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1


    Original     		PDF DD1200S33KL2C

    FS300R12OE4P

    Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
    Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in


    Original     		PDF

    b5 diode

    Abstract: DIODE i2t diode k2 igbt module ir igbt power diode
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 1200 S 33 K2 B5 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Periodische Spitzensperrspannung


    Original     		PDF DD1200S33 b5 diode DIODE i2t diode k2 igbt module ir igbt power diode

    FS20R06XE3

    Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
    Text: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors


    Original     		PDF D-59581 FS20R06XE3 aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd

    bsm25gp120 b2

    Abstract: FF300R12KE3 BSM50GD120DN2E3226 FZ1600R12KF4 FZ1200R16KF4 FF400R33KF2 BSM100GB60DLC BSM50GD60DLC FZ600R12KE3S FF600R12KE3
    Text: IGBT High Power Modules 1200 VCES 1200 VCES Type * Dual modules IH1/4 IH7 Single modules Standard 2. Generation FF400R12KF4 FF600R12KF4 FF800R12KF4 Low Loss 2. Generation FF400R12KL4C FF600R12KL4C FF800R12KL4C IGBT3 ◆ FF600R12KE3 ◆ FF800R12KE3 ◆ FF1200R12KE3


    Original     		PDF FF400R12KF4 FF600R12KF4 FF800R12KF4 FF400R12KL4C FF600R12KL4C FF800R12KL4C FF600R12KE3 FF800R12KE3 FF1200R12KE3 FZ800R12KS4 bsm25gp120 b2 FF300R12KE3 BSM50GD120DN2E3226 FZ1600R12KF4 FZ1200R16KF4 FF400R33KF2 BSM100GB60DLC BSM50GD60DLC FZ600R12KE3S FF600R12KE3

    FS450R12KE3 S1

    Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
    Text: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.


    Original     		PDF E-103, FS450R12KE3 S1 infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120

    BSM25GP120 b2

    Abstract: BSM15GP120 b2 BSM50GD120DN2E3226 FS10R06VL4_B2 BSM35GP120 F4-150R12KS4 FS10R06VL4 BSM30GD60DLCE3224 FZ1200R16KF4 BSM15GD120DN2E3224
    Text: kuka-2003-inhalt.qxd 17.04.2003 10:33 Uhr Seite 7 EasyPIM 600 V-1200 V Type VCES V Low Loss 2. Generation ◆ FB6R06VL4 ◆ FB10R06VL4 FB10R06KL4 FB10R06KL4G FB10R06KL4G_B1 FP10R06KL4 FP10R06KL4_B3 FB15R06KL4 FB15R06KL4_B1 FP15R06KL4 FB20R06KL4 FB20R06KL4_B1


    Original     		PDF kuka-2003-inhalt FB6R06VL4 FB10R06VL4 FB10R06KL4 FB10R06KL4G FB10R06KL4G FP10R06KL4 FP10R06KL4 FB15R06KL4 FB15R06KL4 BSM25GP120 b2 BSM15GP120 b2 BSM50GD120DN2E3226 FS10R06VL4_B2 BSM35GP120 F4-150R12KS4 FS10R06VL4 BSM30GD60DLCE3224 FZ1200R16KF4 BSM15GD120DN2E3224