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    Untitled

    Abstract: No abstract text available
    Text: GSI550 Transistors N-Channel IGBT with Current Sensing V BR CES (V)500 V(BR)GES (V)25 I(C) Max. (A)80 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case700m td(on) Max (s) On time delay100n t(r) Max. (s) Rise time200nÂ


    Original     		GSI550 Junc-Case700m delay100nà time200nà time900nà StyleTO-218 Code5-71 NumberTR00500071 PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTG24N60D1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)25 I(C) Max. (A)40 Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case1.0 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.


    Original     		HGTG24N60D1 delay100nà time150nà time900n PDF

    Untitled

    Abstract: No abstract text available
    Text: IXGH30N60U1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8


    Original     		IXGH30N60U1 Junc-Case620m delay100nà time200nà time500nà PDF

    Untitled

    Abstract: No abstract text available
    Text: IXGH30N50 Transistors N-Channel IGBT V BR CES (V)500 V(BR)GES (V)30 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case600m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8.0


    Original     		IXGH30N50 Junc-Case600m delay100n time200n PDF

    Untitled

    Abstract: No abstract text available
    Text: IXGH30N60AU1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8


    Original     		IXGH30N60AU1 Junc-Case620m delay100nà time200nà time500nà PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTG20N120E2 Transistors N-Channel IGBT V BR CES (V)1200 V(BR)GES (V) I(C) Max. (A)34 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case0.83 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.


    Original     		HGTG20N120E2 delay100nà time150nà time620n PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTG20N100D2 Transistors N-Channel IGBT V BR CES (V)1k V(BR)GES (V)20 I(C) Max. (A)34 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case0.83 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.


    Original     		HGTG20N100D2 delay100nà time150nà time650n PDF

    Untitled

    Abstract: No abstract text available
    Text: RCP10N40A Transistors N-Channel IGBT V BR CES (V)400 V(BR)GES (V)20 I(C) Max. (A)5 Absolute Max. Power Diss. (W)60 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case2.08 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.


    Original     		RCP10N40A delay100n time600n time500n y100n PDF

    Untitled

    Abstract: No abstract text available
    Text: IXGH30N30 Transistors N-Channel IGBT V BR CES (V)250 V(BR)GES (V)20 I(C) Max. (A)60 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.


    Original     		IXGH30N30 Junc-Case620m delay100nà time200nà time700nà PDF

    RCP10N40

    Abstract: No abstract text available
    Text: RCP10N40 Transistors N-Channel IGBT V BR CES (V)400 V(BR)GES (V)20 I(C) Max. (A)5 Absolute Max. Power Diss. (W)60 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case2.08 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.


    Original     		RCP10N40 delay100n time600n time500n ay100n PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTG24N60D1D Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)25 I(C) Max. (A)40 Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case1.0 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.


    Original     		HGTG24N60D1D delay100nà time150nà time900n PDF

    Untitled

    Abstract: No abstract text available
    Text: RCP10N35 Transistors N-Channel IGBT V BR CES (V)350 V(BR)GES (V)20 I(C) Max. (A)5 Absolute Max. Power Diss. (W)60 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case2.08 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.


    Original     		RCP10N35 delay100n time600n time500n ay100n PDF

    Untitled

    Abstract: No abstract text available
    Text: OM6534SF Transistors N-Channel IGBT V BR CES (V)1.0k V(BR)GES (V) I(C) Max. (A)50 Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case.50 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.22


    Original     		OM6534SF delay100n time300n time250n elay100n PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTG12N60D1D Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)21 Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case1.67 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.


    Original     		HGTG12N60D1D delay100nà time150nà time600n PDF