Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BSR15 = T7 BSR16 = T8 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
|
Original
|
OT-23
BSR15
BSR16
C-120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BSR15 = T7 BSR16 = T8 Pin configuration 1 = BASE 2 = EMITTER
|
Original
|
OT-23
BSR15
BSR16
C-120
BAV70REV
071105E
|
PDF
|
marking t8 sot-23
Abstract: T8 SOT23 BSR15 BSR16
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BSR15 = T7 BSR16 = T8 Pin configuration 1 = BASE 2 = EMITTER
|
Original
|
OT-23
BSR15
BSR16
C-120
BAV70REV
071105E
marking t8 sot-23
T8 SOT23
BSR15
BSR16
|
PDF
|
BSR15
Abstract: BSR16
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BSR15 = T7 BSR16 = T8 PACKAGE OUTLINE DETAILS
|
Original
|
OT-23
BSR15
BSR16
C-120
BSR15
BSR16
|
PDF
|
scr control circuit for welding
Abstract: POW-R-BRIK SCR 131-6 SCR 2000 powerex R9G0 2100 scr welding 2200300 scr 209 3000 watt inverter SCR RECTIFIER
Text: POW-R-BRIK Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Phase Control Modules 345-800 Amperes/400-3000 Volts OUTLINE DRAWING MARKING: DEVICE AND DIRECTION ACCORDING TO CIRCUIT CONFIGURATION CHART L TYP. 4 PLACES C
|
Original
|
Amperes/400-3000
9003DH
0803DH
1003DH
1203DH
08XX00
0903DH
scr control circuit for welding
POW-R-BRIK
SCR 131-6
SCR 2000
powerex R9G0 2100
scr welding
2200300
scr 209
3000 watt inverter
SCR RECTIFIER
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking
|
Original
|
OT-23
BSR15
BSR16
C-120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 512Mb: x16 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package – 121-ball FBGA 6.5mm x 8mm
|
Original
|
512Mb:
MT42L32M16D1
09005aef8467caf2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package
|
Original
|
512Mb
MT42L32M16D1,
MT42L32M32D2
121-ball
134-ball
09005aef84d56533
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package
|
Original
|
512Mb
MT42L32M16D1,
MT42L32M32D2
121-ball
134-ball
09005aef84d56533
|
PDF
|
C167-LM
Abstract: SAB-C167-LM C166 C167 SAF-C167-LM CC31IR
Text: Microcomputer Components Technical Support Group Munich HL MCB AT 1 Errata Sheet December 18, 1995 / Release 1.2 Device : Stepping Code / Marking : SAB-C167-LM SAF-C167-LM AD This Errata Sheet describes the functional problems and deviations from the DC/AC specification known in this step. Problem classification and numbering is
|
Original
|
SAB-C167-LM
SAF-C167-LM
C167-LM
144-pin
P-MQFP-144-1)
C167-LM,
SAB-C167-LM
C166
C167
SAF-C167-LM
CC31IR
|
PDF
|
marking AF
Abstract: C166 C167 C167CR SAH-C167CW-L16M c167cw-l16
Text: Microcomputer Components Technical Support Group Munich HL MCB AT 1 Errata Sheet December 18, 1995 / Release 1.0 Device : Stepping Code / Marking : SAH-C167CW-L16M AE, AF This errata sheet describes the functional problems and deviations from the DC/AC specification known in this step. For backward reference, a table which
|
Original
|
SAH-C167CW-L16M
C167CW-L16M
144-pin
P-MQFP-144-1)
C167CW-L16M,
marking AF
C166
C167
C167CR
SAH-C167CW-L16M
c167cw-l16
|
PDF
|
MT42L16M32
Abstract: MT42L16M32D1 MT42L16M32D MT42L32M16D1 MT42L32M16D PS 229 LPDDR2 PoP LPDDR2 DRAM LPDDR2-1066 Micron LPDDR2
Text: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package
|
Original
|
512Mb:
MT42L32M16D1,
MT42L16M32D1
09005aef8467caf2
MT42L16M32
MT42L16M32D
MT42L32M16D1
MT42L32M16D
PS 229
LPDDR2 PoP
LPDDR2 DRAM
LPDDR2-1066
Micron LPDDR2
|
PDF
|
MT42L16M32D1
Abstract: 7600B Dynamic Memory Refresh Controller LPDDR2-1066 121ball
Text: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package
|
Original
|
512Mb:
MT42L32M16D1,
MT42L16M32D1
09005aef8467caf2
7600B
Dynamic Memory Refresh Controller
LPDDR2-1066
121ball
|
PDF
|
PAN1322-SPP
Abstract: No abstract text available
Text: August 2013 ENW89841A3KF Bluetooth QD ID:B021246 End Product Listing FCC ID: T7VEBMU IC ID: 216QEBMU PAN1322-SPP Intel’s BlueMoonUniversal Platform Wireless Modules User’s Manual Hardware Description Revision 1.3 Edition 2013-08-14 Published by Panasonic Industrial Devices Europe GmbH
|
Original
|
ENW89841A3KF
B021246
216QEBMU
PAN1322-SPP
D-21337
PAN1322
PAN1322-SPP
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: January 2011 ENW89810K5CF Bluetooth QD ID:B014433 End Product Listing FCC ID: T7VEBMU IC ID: 216QEBMU PAN1311-SPP In f i n e o n’s BlueMoonUniversal Platform Wireless Modules User’s Manual Hardware Description Revision 1.1 November 2011 ENW89811xxxF
|
Original
|
ENW89810K5CF
B014433
216QEBMU
PAN1311-SPP
ENW89811xxxF
PAN1321-SPP
D-21337
|
PDF
|
Q-SPT7H0327620C5GL
Abstract: SB203 4329A SSPT7 DC100V marking code for resonators SEIKO method of the lot number
Text: Specifications No. Messrs. ( first ・ revised ) Delivery Specifications Product No : Quartz Crystal Unit SSP-T7-F Item code : Q-SPT7H0327620C5GL Product form : 32.768kHz ± 20 x 10-6 / 12.5 pF The number of copies : 1copy Date of Registrantion
|
Original
|
Q-SPT7H0327620C5GL
768kHz
Q-SPT7H0327620C5GL
SB203
4329A
SSPT7
DC100V
marking code for resonators
SEIKO method of the lot number
|
PDF
|
SSP-T7-F
Abstract: Q-SPT7 Q-SPT7H032762070BJ SSPT7 DC100V MATERIAL INSPECTION QUALITY QUANTITY medical ultrasonic crystal SSPT7F outgoing inspection SSP-T7
Text: Specifications No. Messrs. ( first ・ revised ) Delivery Specifications Product No : Quartz Crystal Unit SSP-T7-F Item code : Q-SPT7H032762070BJ Product form : 32.768kHz ± 20 x 10-6 / 7.0 pF The number of copies : 1copy Date of Registrantion
|
Original
|
Q-SPT7H032762070BJ
768kHz
SSP-T7-F
Q-SPT7
Q-SPT7H032762070BJ
SSPT7
DC100V
MATERIAL INSPECTION QUALITY QUANTITY
medical ultrasonic crystal
SSPT7F
outgoing inspection
SSP-T7
|
PDF
|
T73127
Abstract: 4 MHz Oscillator
Text: Preliminary T73127 3.3V VCXO with Output Enable Applications • Crystal-driven clock source General Description The T73127 is a single-chip, low-jitter Voltage-Controlled-Crystal-Oscillator. The device accepts a 19 -30 MHz, 20 pF crystal input, and produces a low jitter output at the same frequency. The output is enabled
|
Original
|
T73127
T73127
100ppm
30ppm
50ppm
T73127/D
T73127/DW
4 MHz Oscillator
|
PDF
|
T73LVP22
Abstract: T73LVP22S1 T73LVP22S1X
Text: Advanced Information T73LVP22 Dual TTL to Differential LVPECL Translator Applications • Clock and Data Translation Ideal for use where space is a premium General Description The TLSI T73LVP22 is a general purpose Dual TTL CMOS to differential LVPECL translator operating
|
Original
|
T73LVP22
T73LVP22
350pS
750mV
MDST-0014-00
T73LVP22S1
T73LVP22S1X
T73P22S1
T73LVP22S1
T73LVP22S1X
|
PDF
|
T73LVP12
Abstract: No abstract text available
Text: Preliminary Information T73LVP12 3.3V LVTTL/LVCMOS-to-Differential LVPECL Translator with Output Enable Applications • LVPECL clock source General Description The TLSI T73LVP12 is a general-purpose LVTTL/LVCMOS-to-differential LVPECL translator operating
|
Original
|
T73LVP12
T73LVP12
350pS
T73LVP12-S08
T73LVP12-S08-TNR
T73LVP12-SOT
T73LVP12-SOT-TNR
T73LVP12-DIE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
|
OCR Scan
|
900MHz
Q62702-F1492
OT-323
aS35bD5
|
PDF
|
BFR90
Abstract: No abstract text available
Text: SIEMENS NPN Silicon RF Transistor BFR 90 • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 90 BFR 90 Q62702-F560 Pin Configuration
|
OCR Scan
|
Q62702-F560
flB35b05
BFR90
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BFP183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F= 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
|
OCR Scan
|
BFP183W
Q62702-F1503
OT-343
fiE35bQ5
900MHz
c15mA
fl535b05
|
PDF
|
d2 SMD TRANSISTORs pnp npn
Abstract: BCW600 2n2222a smd smd transistors B5R17 hS7 marking darlington bc smd smd marking BJ
Text: SMD Transistors SOT-23 Case 350mW Proelectron Series— Confd Q <' H MARKING CODE SIMILAR LEADED DEVICE — 3K BC5586 — 3L Cofc PF MAX (MHz) TYP NF (dB) MAX tofF (mA) 0.65 100 4.5 150 10 0.65 100 4.5 150 10 2.0 0.65 100 4.5 150 4.0 — 50 2.0 0.65 100
|
OCR Scan
|
OT-23
350mW
bc858b
bc558b
bc858c
bc558c
bc859
bc559
bc859a
bc559a
d2 SMD TRANSISTORs pnp npn
BCW600
2n2222a smd
smd transistors
B5R17
hS7 marking
darlington bc smd
smd marking BJ
|
PDF
|