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    DEVICE MARKING T7 Search Results

    DEVICE MARKING T7 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    DEVICE MARKING T7 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BSR15 = T7 BSR16 = T8 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


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    OT-23 BSR15 BSR16 C-120 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BSR15 = T7 BSR16 = T8 Pin configuration 1 = BASE 2 = EMITTER


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    OT-23 BSR15 BSR16 C-120 BAV70REV 071105E PDF

    marking t8 sot-23

    Abstract: T8 SOT23 BSR15 BSR16
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BSR15 = T7 BSR16 = T8 Pin configuration 1 = BASE 2 = EMITTER


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    OT-23 BSR15 BSR16 C-120 BAV70REV 071105E marking t8 sot-23 T8 SOT23 BSR15 BSR16 PDF

    BSR15

    Abstract: BSR16
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BSR15 = T7 BSR16 = T8 PACKAGE OUTLINE DETAILS


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    OT-23 BSR15 BSR16 C-120 BSR15 BSR16 PDF

    scr control circuit for welding

    Abstract: POW-R-BRIK SCR 131-6 SCR 2000 powerex R9G0 2100 scr welding 2200300 scr 209 3000 watt inverter SCR RECTIFIER
    Text: POW-R-BRIK Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Phase Control Modules 345-800 Amperes/400-3000 Volts OUTLINE DRAWING MARKING: DEVICE AND DIRECTION ACCORDING TO CIRCUIT CONFIGURATION CHART L TYP. 4 PLACES C


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    Amperes/400-3000 9003DH 0803DH 1003DH 1203DH 08XX00 0903DH scr control circuit for welding POW-R-BRIK SCR 131-6 SCR 2000 powerex R9G0 2100 scr welding 2200300 scr 209 3000 watt inverter SCR RECTIFIER PDF

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking


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    OT-23 BSR15 BSR16 C-120 PDF

    Untitled

    Abstract: No abstract text available
    Text: 512Mb: x16 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package – 121-ball FBGA 6.5mm x 8mm


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    512Mb: MT42L32M16D1 09005aef8467caf2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package


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    512Mb MT42L32M16D1, MT42L32M32D2 121-ball 134-ball 09005aef84d56533 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package


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    512Mb MT42L32M16D1, MT42L32M32D2 121-ball 134-ball 09005aef84d56533 PDF

    C167-LM

    Abstract: SAB-C167-LM C166 C167 SAF-C167-LM CC31IR
    Text: Microcomputer Components Technical Support Group Munich HL MCB AT 1 Errata Sheet December 18, 1995 / Release 1.2 Device : Stepping Code / Marking : SAB-C167-LM SAF-C167-LM AD This Errata Sheet describes the functional problems and deviations from the DC/AC specification known in this step. Problem classification and numbering is


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    SAB-C167-LM SAF-C167-LM C167-LM 144-pin P-MQFP-144-1) C167-LM, SAB-C167-LM C166 C167 SAF-C167-LM CC31IR PDF

    marking AF

    Abstract: C166 C167 C167CR SAH-C167CW-L16M c167cw-l16
    Text: Microcomputer Components Technical Support Group Munich HL MCB AT 1 Errata Sheet December 18, 1995 / Release 1.0 Device : Stepping Code / Marking : SAH-C167CW-L16M AE, AF This errata sheet describes the functional problems and deviations from the DC/AC specification known in this step. For backward reference, a table which


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    SAH-C167CW-L16M C167CW-L16M 144-pin P-MQFP-144-1) C167CW-L16M, marking AF C166 C167 C167CR SAH-C167CW-L16M c167cw-l16 PDF

    MT42L16M32

    Abstract: MT42L16M32D1 MT42L16M32D MT42L32M16D1 MT42L32M16D PS 229 LPDDR2 PoP LPDDR2 DRAM LPDDR2-1066 Micron LPDDR2
    Text: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package


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    512Mb: MT42L32M16D1, MT42L16M32D1 09005aef8467caf2 MT42L16M32 MT42L16M32D MT42L32M16D1 MT42L32M16D PS 229 LPDDR2 PoP LPDDR2 DRAM LPDDR2-1066 Micron LPDDR2 PDF

    MT42L16M32D1

    Abstract: 7600B Dynamic Memory Refresh Controller LPDDR2-1066 121ball
    Text: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package


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    512Mb: MT42L32M16D1, MT42L16M32D1 09005aef8467caf2 7600B Dynamic Memory Refresh Controller LPDDR2-1066 121ball PDF

    PAN1322-SPP

    Abstract: No abstract text available
    Text: August 2013 ENW89841A3KF Bluetooth QD ID:B021246 End Product Listing FCC ID: T7VEBMU IC ID: 216QEBMU PAN1322-SPP Intel’s BlueMoonUniversal Platform Wireless Modules User’s Manual Hardware Description Revision 1.3 Edition 2013-08-14 Published by Panasonic Industrial Devices Europe GmbH


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    ENW89841A3KF B021246 216QEBMU PAN1322-SPP D-21337 PAN1322 PAN1322-SPP PDF

    Untitled

    Abstract: No abstract text available
    Text: January 2011 ENW89810K5CF Bluetooth QD ID:B014433 End Product Listing FCC ID: T7VEBMU IC ID: 216QEBMU PAN1311-SPP In f i n e o n’s BlueMoonUniversal Platform Wireless Modules User’s Manual Hardware Description Revision 1.1 November 2011 ENW89811xxxF


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    ENW89810K5CF B014433 216QEBMU PAN1311-SPP ENW89811xxxF PAN1321-SPP D-21337 PDF

    Q-SPT7H0327620C5GL

    Abstract: SB203 4329A SSPT7 DC100V marking code for resonators SEIKO method of the lot number
    Text: Specifications No. Messrs. ( first ・ revised ) Delivery Specifications Product No : Quartz Crystal Unit SSP-T7-F Item code : Q-SPT7H0327620C5GL Product form : 32.768kHz ± 20 x 10-6 / 12.5 pF The number of copies : 1copy Date of Registrantion


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    Q-SPT7H0327620C5GL 768kHz Q-SPT7H0327620C5GL SB203 4329A SSPT7 DC100V marking code for resonators SEIKO method of the lot number PDF

    SSP-T7-F

    Abstract: Q-SPT7 Q-SPT7H032762070BJ SSPT7 DC100V MATERIAL INSPECTION QUALITY QUANTITY medical ultrasonic crystal SSPT7F outgoing inspection SSP-T7
    Text: Specifications No. Messrs. ( first ・ revised ) Delivery Specifications Product No : Quartz Crystal Unit SSP-T7-F Item code : Q-SPT7H032762070BJ Product form : 32.768kHz ± 20 x 10-6 / 7.0 pF The number of copies : 1copy Date of Registrantion


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    Q-SPT7H032762070BJ 768kHz SSP-T7-F Q-SPT7 Q-SPT7H032762070BJ SSPT7 DC100V MATERIAL INSPECTION QUALITY QUANTITY medical ultrasonic crystal SSPT7F outgoing inspection SSP-T7 PDF

    T73127

    Abstract: 4 MHz Oscillator
    Text: Preliminary T73127 3.3V VCXO with Output Enable Applications • Crystal-driven clock source General Description The T73127 is a single-chip, low-jitter Voltage-Controlled-Crystal-Oscillator. The device accepts a 19 -30 MHz, 20 pF crystal input, and produces a low jitter output at the same frequency. The output is enabled


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    T73127 T73127 100ppm 30ppm 50ppm T73127/D T73127/DW 4 MHz Oscillator PDF

    T73LVP22

    Abstract: T73LVP22S1 T73LVP22S1X
    Text: Advanced Information T73LVP22 Dual TTL to Differential LVPECL Translator Applications • Clock and Data Translation Ideal for use where space is a premium General Description The TLSI T73LVP22 is a general purpose Dual TTL CMOS to differential LVPECL translator operating


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    T73LVP22 T73LVP22 350pS 750mV MDST-0014-00 T73LVP22S1 T73LVP22S1X T73P22S1 T73LVP22S1 T73LVP22S1X PDF

    T73LVP12

    Abstract: No abstract text available
    Text: Preliminary Information T73LVP12 3.3V LVTTL/LVCMOS-to-Differential LVPECL Translator with Output Enable Applications • LVPECL clock source General Description The TLSI T73LVP12 is a general-purpose LVTTL/LVCMOS-to-differential LVPECL translator operating


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    T73LVP12 T73LVP12 350pS T73LVP12-S08 T73LVP12-S08-TNR T73LVP12-SOT T73LVP12-SOT-TNR T73LVP12-DIE PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    OCR Scan
    900MHz Q62702-F1492 OT-323 aS35bD5 PDF

    BFR90

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon RF Transistor BFR 90 • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 90 BFR 90 Q62702-F560 Pin Configuration


    OCR Scan
    Q62702-F560 flB35b05 BFR90 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F= 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan
    BFP183W Q62702-F1503 OT-343 fiE35bQ5 900MHz c15mA fl535b05 PDF

    d2 SMD TRANSISTORs pnp npn

    Abstract: BCW600 2n2222a smd smd transistors B5R17 hS7 marking darlington bc smd smd marking BJ
    Text: SMD Transistors SOT-23 Case 350mW Proelectron Series— Confd Q <' H MARKING CODE SIMILAR LEADED DEVICE — 3K BC5586 — 3L Cofc PF MAX (MHz) TYP NF (dB) MAX tofF (mA) 0.65 100 4.5 150 10 0.65 100 4.5 150 10 2.0 0.65 100 4.5 150 4.0 — 50 2.0 0.65 100


    OCR Scan
    OT-23 350mW bc858b bc558b bc858c bc558c bc859 bc559 bc859a bc559a d2 SMD TRANSISTORs pnp npn BCW600 2n2222a smd smd transistors B5R17 hS7 marking darlington bc smd smd marking BJ PDF