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    DIM800FSM17 Search Results

    DIM800FSM17 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DIM800FSM17-A000 Dynex Single Switch IGBT Module Preliminary Information Original PDF

    DIM800FSM17 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bi-directional switches IGBT

    Abstract: DIM800FSM17-A000 mj 340
    Text: DIM800FSM17-A000 DIM800FSM17-A000 Single Switch IGBT Module Replaces March 2002, version DS5461-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5461-3.1 July 2002


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    PDF DIM800FSM17-A000 DS5461-2 DS5461-3 bi-directional switches IGBT DIM800FSM17-A000 mj 340

    DIM800FSM17-A000

    Abstract: LIN26325
    Text: DIM800FSM17-A000 Single Switch IGBT Module DS5461-3.2 August 2008 LIN26325 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Base with AIN Substrates Lead Free Construction High Thermal Cycling Capability KEY PARAMETERS VCES


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    PDF DIM800FSM17-A000 DS5461-3 LIN26325) DIM800FSM17-A000 LIN26325

    DIM800FSM17-A000

    Abstract: No abstract text available
    Text: DIM800FSM17-A000 DIM800FSM17-A000 Single Switch IGBT Module Replaces March 2002, version DS5461-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5461-3.1 July 2002


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    PDF DIM800FSM17-A000 DS5461-2 DS5461-3 DIM800FSM17-A000

    DIM800FSM17-A000

    Abstract: No abstract text available
    Text: DIM800FSM17-A000 DIM800FSM17-A000 Single Switch IGBT Module Preliminary Information Replaces May 2001, version DS5461-1.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


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    PDF DIM800FSM17-A000 DS5461-1 DIM800FSM17-A000

    Untitled

    Abstract: No abstract text available
    Text: DIM800FSM17-A000 Single Switch IGBT Module Replaces DS5461-3.2 DS5461-4 November 2010 LN27717 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Non Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)


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    PDF DIM800FSM17-A000 DS5461-3 DS5461-4 LN27717)

    DS5461-1

    Abstract: No abstract text available
    Text: DIM800FSM17-A000 DIM800FSM17-A000 Single Switch IGBT Module Preliminary Information DS5461-1.0 May 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS


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    PDF DIM800FSM17-A000 DS5461-1 DIM800FSM17-A000

    DIM800FSM17-A000

    Abstract: DIM800FSM17-A
    Text: DIM800FSM17-A000 Single Switch IGBT Module Replaces DS5461-3.2 DS5461-4 November 2010 LN27717 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Non Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)


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    PDF DIM800FSM17-A000 DS5461-3 DS5461-4 LN27717) DIM800FSM17-A000 DIM800FSM17-A

    Tag 225-600

    Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


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    PDF DS5766-4. Tag 225-600 IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes

    kpb 307

    Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


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    PDF DS5766-4. kpb 307 KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor

    DCR370T

    Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches


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    PDF 4500Vee DS5766-4. DCR370T DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34

    DCR2950W

    Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


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    PDF DS5766-4. DCR2950W K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A

    IGBT cross reference semikron eupec

    Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
    Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130


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    PDF DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40

    IGBT cross reference semikron eupec

    Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
    Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130


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    PDF DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40

    2sd315ai

    Abstract: 2sc0108t bi-directional switch IGBT driver 2SC0435T 2SD106AI 2SD106Ai-17 2sc0108 2sc0435 CT-Concept igbt trafo drivers
    Text: AN 5946 Driving Dynex High Power IGBT modules with Concept Gate Drives Application Note AN5946-2.0 September 2009 LN26854 Author: Dinesh Chamund Introduction Dynex Semiconductor manufactures a variety of IGBT modules ranging from 1200V to 6500V and 100A to 2400A.


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    PDF AN5946-2 LN26854 2sd315ai 2sc0108t bi-directional switch IGBT driver 2SC0435T 2SD106AI 2SD106Ai-17 2sc0108 2sc0435 CT-Concept igbt trafo drivers

    MP02X

    Abstract: DCR10 DYNEX DG648 DCR1596SW DIM200PHM33
    Text: a lp h a n u m e r ic p a r t lis t Part No. ACR300SG ACR400SE ACR44U DCR1002SF DCR1003SF DCR1006SF DCR1008SF DCR1020SF DCR1021SF DCR1374SBA DCR1375SBA DCR1376SBA DCR1474SY DCR1475SY DCR1476SY DCR1478SY DCR1574SY DCR1575SY DCR1576SY DCR1594SW DCR1595SW DCR1596SW


    OCR Scan
    PDF ACR300SG ACR400SE ACR44U DCR1002SF DCR1003SF DCR1006SF DCR1008SF DCR1020SF DCR1021SF DCR1374SBA MP02X DCR10 DYNEX DG648 DCR1596SW DIM200PHM33

    108X62

    Abstract: No abstract text available
    Text: powerline igbt modules IG B T M o d u le s Generic Part Number Voltage Grade Current Rating Circuit Type VcES V 'c (A) @ T case CQ Max. Saturation Current Voltage VCE(SAT) Rating (Typical) «CM (A) (V) Total Switching Energy Isolation Voltage (mJ) v« (kV)


    OCR Scan
    PDF GP250MHB06S GP350MHB06S GP500LSS06S GP200MHS12 GP200MKS12 GP200MLS12 DIM400DDM12 DIM400LSS12 DIM800DDM12 DIM800FSM12 108X62