Untitled
Abstract: No abstract text available
Text: SBR160-10J Ordering number : ENN8396 SBR160-10J Schottky Barrier Diode Twin Type • Cathode Common 100V, 16A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • Low reverse current.
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ENN8396
SBR160-10J
10ectric
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SBR160-10J
Abstract: No abstract text available
Text: SBR160-10J Ordering number : ENN8396 SBR160-10J Schottky Barrier Diode Twin Type • Cathode Common 100V, 16A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • Low reverse current.
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SBR160-10J
ENN8396
SBR160-10J
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH16N120P IXFT16N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings
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IXFH16N120P
IXFT16N120P
300ns
O-247
25VDS
16N120P
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IXTP450P2
Abstract: IXTH450P2 IXTQ450P2
Text: Advance Technical Information IXTP450P2 IXTQ450P2 IXTH450P2 PolarP2TM Power MOSFET VDSS ID25 = = ≤ = RDS on trr(typ) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 500V 16A Ω 330mΩ 400ns TO-220AB (IXTP) G Symbol Test Conditions Maximum Ratings
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IXTP450P2
IXTQ450P2
IXTH450P2
400ns
O-220AB
338B2
IXTP450P2
IXTH450P2
IXTQ450P2
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Untitled
Abstract: No abstract text available
Text: PolarTM HiperFETTM Power MOSFET VDSS ID25 IXFA16N50P IXFP16N50P IXFH16N50P = 500V = 16A Ω ≤ 400mΩ ≤ 200ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions
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IXFA16N50P
IXFP16N50P
IXFH16N50P
200ns
O-263
O-220AB
16N50P
5J-745
5-1-09-C
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IXFH16N50P
Abstract: IXFA16N50P IXFP16N50P Z 728
Text: IXFA16N50P IXFP16N50P IXFH16N50P PolarTM HiperFETTM Power MOSFET VDSS ID25 = 500V = 16A Ω ≤ 400mΩ ≤ 200ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions
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IXFA16N50P
IXFP16N50P
IXFH16N50P
200ns
O-263
O-220AB
O-247
16N50P
5J-745
5-1-09-C
IXFH16N50P
Z 728
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IF110
Abstract: IXGA16N60C2D1 IXGH16N60C2D1 IXGP16N60C2D1
Text: Preliminary Technical Information VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 HiPerFASTTM IGBTs C2-Class High Speed w/ Diode 600V 16A 3.0V 35ns TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IC110
IXGA16N60C2D1
IXGP16N60C2D1
IXGH16N60C2D1
O-263
IF110
O-220
O-247
IF110
IXGA16N60C2D1
IXGH16N60C2D1
IXGP16N60C2D1
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IXFH16N120
Abstract: ixfh16n120p 16N120P 1200v to247 MOSFET
Text: IXFH16N120P IXFT16N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFH16N120P
IXFT16N120P
300ns
O-247
16N120P
4-03-08-A
IXFH16N120
ixfh16n120p
1200v to247 MOSFET
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16N50
Abstract: 16N50P IXFA16N50P IXFH16N50P IXFP16N50P IXYS Corporation
Text: IXFA16N50P IXFP16N50P IXFH16N50P PolarHVTM HiperFET Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 16A Ω ≤ 400mΩ ≤ 200ns TO-263 G S (TAB) TO-220 Symbol Test Conditions Maximum Ratings VDSS
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IXFA16N50P
IXFP16N50P
IXFH16N50P
200ns
O-263
O-220
O-24icoFarads
16N50P
5J-745
16N50
IXFA16N50P
IXFH16N50P
IXFP16N50P
IXYS Corporation
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IXFH16N120
Abstract: No abstract text available
Text: VDSS ID25 IXFH16N120P IXFT16N120P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFH16N120P
IXFT16N120P
300ns
O-247
16N120P
4-03-08-A
IXFH16N120
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IXTH450P2
Abstract: IXTP450P2 to-247 to-220 to-3p IXTQ450P2 DS100241A
Text: IXTP450P2 IXTQ450P2 IXTH450P2 Polar2TM Power MOSFETs VDSS ID25 = = ≤ = RDS on trr(typ) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 500V 16A Ω 330mΩ 400ns TO-220AB (IXTP) G Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXTP450P2
IXTQ450P2
IXTH450P2
400ns
O-220AB
O-247
450P2
IXTH450P2
to-247 to-220 to-3p
DS100241A
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Untitled
Abstract: No abstract text available
Text: Polar2TM Power MOSFETs VDSS ID25 IXTP450P2 IXTQ450P2 IXTH450P2 = = ≤ = RDS on trr(typ) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 500V 16A Ω 330mΩ 400ns TO-220AB (IXTP) G Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXTP450P2
IXTQ450P2
IXTH450P2
400ns
O-220AB
IXTP450P2
450P2
5J-N45)
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IXFH16N120P
Abstract: No abstract text available
Text: IXFT16N120P IXFH16N120P PolarTM HiPerFETTM Power MOSFETs VDSS ID25 = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFT16N120P
IXFH16N120P
300ns
O-268
O-247
16N120P
09-12-12-B
IXFH16N120P
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBTs B2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 600V 16A 2.3V 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXGA16N60B2D1
IXGP16N60B2D1
IXGH16N60B2D1
O-263
IF110
16N60B3D1
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IXGH16N60C2D1
Abstract: IXGP16N60C2D1 16N60C3 IF110 IXGA16N60C2D1
Text: HiPerFASTTM IGBTs C2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 600V 16A 3.0V 33ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXGA16N60C2D1
IXGP16N60C2D1
IXGH16N60C2D1
O-263
IF110
16N60C3D1
IXGH16N60C2D1
IXGP16N60C2D1
16N60C3
IF110
IXGA16N60C2D1
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IXGH16N60B2D1
Abstract: IXGP16N60B2D1
Text: HiPerFASTTM IGBTs B2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 600V 16A 1.95V 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXGA16N60B2D1
IXGP16N60B2D1
IXGH16N60B2D1
O-263
IF110
16N60B2D1
IXGH16N60B2D1
IXGP16N60B2D1
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IXGH16N60B2
Abstract: 16N60 IXGH16N60B2D1 C3519 16N60B IF110 IXGA16N60B2D1 IXGP16N60B2D1
Text: HiPerFASTTM IGBTs B2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 600V 16A 2.3V 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXGA16N60B2D1
IXGP16N60B2D1
IXGH16N60B2D1
O-263
IF110
16N60B3D1
IXGH16N60B2
16N60
IXGH16N60B2D1
C3519
16N60B
IF110
IXGA16N60B2D1
IXGP16N60B2D1
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APT15F60B
Abstract: APT15F60S MIC4452
Text: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT15F60B
APT15F60S
190nS
APT-8172
APT15F60B
APT15F60S
MIC4452
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zvs flyback driver
Abstract: APT15F60B APT15F60S MIC4452
Text: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT15F60B
APT15F60S
190nS
APT-8172
zvs flyback driver
APT15F60B
APT15F60S
MIC4452
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PDF
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Untitled
Abstract: No abstract text available
Text: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT15F60B
APT15F60S
190nS
APT15F60B
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Untitled
Abstract: No abstract text available
Text: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET TO POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT15F60B
APT15F60S
190nS
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IRFY140C
Abstract: IRFY140CM
Text: PD - 91287C POWER MOSFET THRU-HOLE TO-257AA IRFY140C,IRFY140CM 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY140C 0.077 Ω 16*A Ceramic IRFY140CM 0.077 Ω 16*A Ceramic HEXFET® MOSFET technology is the key to International
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91287C
O-257AA)
IRFY140C
IRFY140CM
IRFY140C
IRFY140C,
O-257AA
IRFY140CM
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IRF540NPBF
Abstract: IRF1010 94812 4.5v to 100v input regulator
Text: PD - 94812 IRF540NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 44mΩ G ID = 33A S Description Advanced HEXFET® Power MOSFETs from International
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IRF540NPbF
O-220
O-220AB
IRF1010
IRF540NPBF
IRF1010
94812
4.5v to 100v input regulator
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94185 POWER MOSFET THRU-HOLE TO-257AA IRFY140,IRFY140M 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY140 0.077 Ω 16*A Glass IRFY140M 0.077 Ω 16*A Glass HEXFET® MOSFET technology is the key to International
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O-257AA)
IRFY140
IRFY140M
IRFY140
IRFY140,
O-257AA
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