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    DIODE 1N6263 Search Results

    DIODE 1N6263 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 1N6263 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode 1N6263W SCHOTTKY DIODE SOD-123 Features 1.05 • · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance


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    PDF OD-123 1N6263W OD-123 1N6263W 3000ms. 020REF 500REF

    1N6263W

    Abstract: A2 SOD-123
    Text: SOD-123 Plastic-Encapsulate Diode 1N6263W SCHOTTKY DIODE SOD-123 Features 1.05 • · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion


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    PDF OD-123 1N6263W OD-123 1N6263W 3000ms. 020REF 500REF A2 SOD-123

    1N6263

    Abstract: UHF DO-35
    Text: 1N6263 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. DO-35


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    PDF 1N6263 DO-35 1N6263 UHF DO-35

    1N6263

    Abstract: No abstract text available
    Text: 1N6263 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. DO-35


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    PDF 1N6263 DO-35 1N6263

    CPD92

    Abstract: Schottky Diode 1N6263 CMDD6263 CMKD6263 CMOD6263 CMPD6263 CMSD6263
    Text: PROCESS CPD92 Central Schottky Diode TM Semiconductor Corp. High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 7.9 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å


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    PDF CPD92 CMDD6263 CMKD6263 CMOD6263 CMPD6263 CMSD6263 1N6263 CPD92 Schottky Diode 1N6263 CMDD6263 CMKD6263 CMOD6263

    "Schottky Diode"

    Abstract: 1N6263 Schottky diode Die Schottky diode wafer CMOD6263 CMPD6263 CMSD6263 CPD92V CMDD6263 CMKD6263
    Text: PROCESS CPD92V Schottky Diode High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å


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    PDF CPD92V CMDD6263 CMKD6263 CMLD6263 CMOD6263 CMPD6263 CMSD6263 CMUD6263 1N6263 "Schottky Diode" 1N6263 Schottky diode Die Schottky diode wafer CMOD6263 CPD92V CMDD6263 CMKD6263

    "Schottky Diode"

    Abstract: 1N6263 CMDD6263 CMKD6263 CMLD6263 CMOD6263 CMPD6263 CMSD6263 CMUD6263E
    Text: PROCESS CPD102X Schottky Diode High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 5.9 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å


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    PDF CPD102X CMDD6263 CMKD6263 CMLD6263 CMOD6263 CMPD6263 CMSD6263 CMUD6263E 1N6263 27-September "Schottky Diode" 1N6263 CMDD6263 CMKD6263 CMOD6263

    schottky diode high voltage

    Abstract: diode schottky 29 1N6263 diode 29 CMDD6263 CMKD6263 CMLD6263 CMOD6263 CMPD6263 CMSD6263
    Text: PROCESS CPD92V Schottky Diode High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å


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    PDF CPD92V CMDD6263 CMKD6263 CMLD6263 CMOD6263 CMPD6263 CMSD6263 CMUD6263 1N6263 schottky diode high voltage diode schottky 29 1N6263 diode 29 CMDD6263 CMKD6263 CMOD6263

    DS1101

    Abstract: 1N6263W 1N6263W-7-F
    Text: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • • • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion


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    PDF 1N6263W OD-123 DS11014 DS1101 1N6263W 1N6263W-7-F

    1N6263W

    Abstract: No abstract text available
    Text: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion SOD-123


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    PDF 1N6263W OD-123 OD-123, MIL-STD-202, 3000ms. DS11014 1N6263W

    1N6263W

    Abstract: No abstract text available
    Text: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE POWER SEMICONDUCTOR Features • • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion


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    PDF 1N6263W OD-123 OD-123, MIL-STD-202, DS11014 1N6263W

    marking sb diode

    Abstract: 1N6263W 1N6263W-7 J-STD-020A
    Text: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion SOD-123


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    PDF 1N6263W OD-123 OD-123, J-STD-020A MIL-STD-202, 1N6263W-7 3000/Tape com/datasheets/ap02007 DS11014 marking sb diode 1N6263W 1N6263W-7 J-STD-020A

    Untitled

    Abstract: No abstract text available
    Text: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion SOD-123


    Original
    PDF 1N6263W OD-123 OD-123, MIL-STD-202, 1N6263W DS11014

    Untitled

    Abstract: No abstract text available
    Text: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion SOD-123


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    PDF 1N6263W OD-123 OD-123, MIL-STD-202, 1N6263W 3000ms. DS11014

    Untitled

    Abstract: No abstract text available
    Text: SPICE MODEL: 1N6263W 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • • • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for


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    PDF 1N6263W OD-123 J-STD-020C MIL-STD-202, DS11014

    SB SOD123

    Abstract: No abstract text available
    Text: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion SOD-123


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    PDF 1N6263W OD-123 OD-123, J-STD-020A MIL-STD-202, DS11014 1N6263W-7 3000/Tape SB SOD123

    Untitled

    Abstract: No abstract text available
    Text: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE SPICE MODEL: 1N6263W Features • · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion


    Original
    PDF 1N6263W OD-123 OD-123, J-STD-020A MIL-STD-202, 3000/Tape 1N6263W-7

    Untitled

    Abstract: No abstract text available
    Text: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion · · ·


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    PDF 1N6263W OD-123 OD-123, MIL-STD-202, Typic2007 DS11014

    Germanium diode

    Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
    Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes


    OCR Scan
    PDF 1N34A 1N38A 1N60A 1N100A 1N270 1N276 1N277 1N456 1N459 1N456A Germanium diode 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode

    1N4007 diode SOD 80

    Abstract: 1N4148 SMA 2n2222a SOT23 smd 2n3055 2N2369 SOT-23 2n3904 smd 2n3055 SOT-23 TIP41 SOT23 2N6520 sot23 SMD DIODE 1N4006
    Text: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 BAS28 CLL914 CMPD 914 CMPD2836 CMPD2838 CMPD7000 SOT-143 SOD-80 SOT-23 SOT-23 SOT-23 SOT-23 Dual, Isolated Leadless Switching Diode Single Switching Diode Dual, Common Anode Dual, Common Cathode


    OCR Scan
    PDF BAS28 CLL914 CMPD2836 CMPD2838 CMPD7000 CLL4448 CMPD4448 BAS56 CLL4150 CMPD4150 1N4007 diode SOD 80 1N4148 SMA 2n2222a SOT23 smd 2n3055 2N2369 SOT-23 2n3904 smd 2n3055 SOT-23 TIP41 SOT23 2N6520 sot23 SMD DIODE 1N4006

    1N4937 SMD

    Abstract: diode 1n4007 melf smd 2n5401 smd 1n4001 melf diode 1n4007 melf 2n2222a SOT223 1N4148 SOD-80 2n2222a SOT23 1N5819 SOD80 2N2369 SOT-23
    Text: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 CMPD 914 CLL914 CMPD28:i6 CMPD28IÌ8 CMPD7000 BAS28 SOT-23 SOD-80 SOT-23 SOT-23 SOT-23 SOT-143 Single Switching Diode Leadless Switching Diode Dual, Common Anode Dual, Common Cathode Dual, In Series


    OCR Scan
    PDF CLL914 CMPD28 CMPD28I CMPD7000 BAS28 CMPD4448 CLL4448 CMPD41 CLL4150 BAS56 1N4937 SMD diode 1n4007 melf smd 2n5401 smd 1n4001 melf diode 1n4007 melf 2n2222a SOT223 1N4148 SOD-80 2n2222a SOT23 1N5819 SOD80 2N2369 SOT-23

    marking SB

    Abstract: No abstract text available
    Text: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion SOD-123 ' Mechanical Data_


    OCR Scan
    PDF 1N6263W OD-123 OD-123, MIL-STD-202, 1N6263W DS11014 marking SB

    1N6263

    Abstract: No abstract text available
    Text: visHAY 1N6263 SCHOTTKY BARRIER SWITCHING DIODE y LITEM ZI POWER SEMICONDUCTOR Features • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance I Mechanical Data_ •


    OCR Scan
    PDF 1N6263 DO-35, MIL-STD-202, DO-35 1N6263 DS11010

    Untitled

    Abstract: No abstract text available
    Text: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion He h SOD-123 □ • •


    OCR Scan
    PDF 1N6263W OD-123 OD-123, MIL-STD-202, DS11014