IXGH20N140C3H1
Abstract: IXGT20N140C3H1 IC100 GenX3TM
Text: Advance Technical Information GenX3TM 1400V IGBTs w/ Diode IXGH20N140C3H1 IXGT20N140C3H1 High-Speed PT IGBTs for 20 - 50 kHz Switching VCES = IC100 = VCE sat ≤ tfi(typ) = 1400V 20A 5.0V 32ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR
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IXGH20N140C3H1
IXGT20N140C3H1
IC100
O-247
338B2
IXGH20N140C3H1
IXGT20N140C3H1
IC100
GenX3TM
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information GenX3TM 1400V IGBTs w/ Diode IXGH20N140C3H1 IXGT20N140C3H1 High-Speed PT IGBTs for 20 - 50 kHz Switching VCES = IC100 = VCE sat ≤ tfi(typ) = 1400V 20A 5.0V 32ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR
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IXGH20N140C3H1
IXGT20N140C3H1
IC100
O-247
338B2
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYP20N65C3D1 XPTTM 650V IGBT GenX3TM w/Diode VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 20A 2.5V 28ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYP20N65C3D1
IC110
20-60kHz
O-220
IF110
20N65C3
0-13-A
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Untitled
Abstract: No abstract text available
Text: FGB20N60SFD_F085 600V, 20A Field Stop IGBT Features General Description • High current capability Using novel field-stop IGBT technology, Fairchild’s new series of field-stop IGBTs offers the optimum performance for automotive chargers, inverters, and other applications where
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FGB20N60SFD
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: FGB20N60SFD_F085 600V, 20A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverters and other applications where
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FGB20N60SFD
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: FGB20N60SFD_F085 600V, 20A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverters and other applications where
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FGB20N60SFD
AEC-Q101
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fgh40n60
Abstract: No abstract text available
Text: FGH40N60SMD_F085 600V, 40A Field Stop IGBT Features General Description • Maximum Junction Temperature : TJ = 175oC Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where
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FGH40N60SMD
175oC
AEC-Q101
fgh40n60
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ind cont eq 214 L
Abstract: 10-60V E246877 QS-10 12AWG 217F ZM11 9278 ps2 controller wiring diagram 10-60VDC
Text: YR2.DIODE 10-60V, 20A, DUAL DECOUPLING MODULE Y-Series DECOUPLING MODULE • ■ ■ ■ ■ ■ ■ ■ ■ ■ Dual input, single output Two diodes common cathode Rugged metal housing Width only 32mm Cost effective solution to build redundant systems 10-60V Wide-range input
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0-60V,
0-60V
ind cont eq 214 L
10-60V
E246877
QS-10
12AWG
217F
ZM11
9278
ps2 controller wiring diagram
10-60VDC
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Untitled
Abstract: No abstract text available
Text: YR2.DIODE DC12-48V 120V , 20A, DUAL REDUNDANCY MODULE Y-Series REDUNDANCY MODULE ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ Cost Effective Solution to Build Redundant Systems Dual Input with Single Output Two Diodes (Common Cathode) DC12-48V (120V) ±25% Wide-range Input
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DC12-48V
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SC454
Abstract: SC452 SC183 SC440 SC189 GPU board diagram SC560C SC412A SC415 SC416
Text: Semtech IMVP6+ Solutions Q2/ 2009 System diagram LED BKLIGHT DISPLAY IMVP6/6+ CPU SC452 SC454 Single/Dual Switching SC440 SC441 SC412A SC415 1485 like SC416 (415+tracking) Battery Charger CHIPSET Linear SC4211/5/6 SC338/9 SC560 GPU SC470 SC471(A) SC475A
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SC452
SC454
SC440
SC441
SC412A
SC415
SC416
SC4211/5/6
SC338/9
SC560
SC454
SC452
SC183
SC440
SC189
GPU board diagram
SC560C
SC412A
SC415
SC416
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IXGA30N60C3C1
Abstract: IXGH30N60C3C1 IXGP30N60C3C1 30N60C3
Text: IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings
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IXGA30N60C3C1
IXGP30N60C3C1
IXGH30N60C3C1
IC110
100kHz
O-263
IF110
O-220AB
O-247
IXGH30N60C3C1
30N60C3
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYP20N65C3D1M XPTTM 650V IGBT GenX3TM w/Diode Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM
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IXYP20N65C3D1M
IC110
IF110
20N65C3
0-13-A
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings
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IC110
IXGA30N60C3C1
IXGP30N60C3C1
IXGH30N60C3C1
O-263
100kHz
O-220AB
IF110
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY RFJS3006F rGAN-HVTM 650V SSFET With Ultra-Fast Freewheeling Diode The RFJS3006F is a 30A, 650V normally-off sourced switched FET SSFET GaN HEMT providing the same insulated gate ease of use as a power MOSFET or an IGBT, but enabling much higher efficiency at much higher PWM frequencies. The SSFET uses
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RFJS3006F
RFJS3006F
DS130809
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYJ20N120C3D1 (Electrically Isolated Tab) = = ≤ = 1200V 7A 4.0V 108ns High-Speed IGBT for 20-50 kHz Switching ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings
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IC110
IXYJ20N120C3D1
108ns
O-247TM
E153432
IF110
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Untitled
Abstract: No abstract text available
Text: 1200V XPTTM IGBT GenX3TM w/ Diode IXYT20N120C3D1HV High-Speed IGBT for 20-50 kHz Switching VCES = IC110 = VCE sat tfi(typ) = 1200V 17A 3.4V 108ns TO-268HV Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M
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IXYT20N120C3D1HV
IC110
108ns
O-268HV
IF110
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IXYH20N120C3D1
Abstract: No abstract text available
Text: IXYH20N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat tfi(typ) = High-Speed IGBT for 20-50 kHz Switching 1200V 17A 3.4V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M
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IXYH20N120C3D1
IC110
108ns
O-247
IF110
IXYH20N120C3D1
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Ultra fast diode
Abstract: No abstract text available
Text: Advance Technical Information IXYH20N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 17A 4.0V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXYH20N120C3D1
IC110
108ns
O-247
IF110
062in.
Ultra fast diode
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20N120C3
Abstract: No abstract text available
Text: IXYJ20N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat tfi(typ) = (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M VGES VGEM
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IXYJ20N120C3D1
IC110
IF110
O-247TM
E153432
20N120C3
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYH20N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 17A 4.0V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IC110
IXYH20N120C3D1
108ns
O-247
IF110
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYJ20N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IF110
IXYJ20N120C3D1
108ns
O-247TM
E153432
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYP10N65C3D1 XPTTM 650V IGBT GenX3TM w/Diode VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 10A 2.50V 23ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR
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IXYP10N65C3D1
IC110
20-60kHz
O-220
IF110
10N65C3
0-13-A
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PDF
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBTs w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA30N60C3D4 IXGP30N60C3D4 High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXGA30N60C3D4
IXGP30N60C3D4
40-100kHz
O-263
O-220AB
8-06B
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IXGH30N60C3D1
Abstract: 30N60C3 G30N60 g30n60c3 30C17 IXGT30N60C3D1
Text: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) High speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1MΩ
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IXGH30N60C3D1
IXGT30N60C3D1
IC110
O-268
ID110
IXGH30N60C3D1
30N60C3
G30N60
g30n60c3
30C17
IXGT30N60C3D1
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