R22A
Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener
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110VAC
ZPS60-3
R22A
transistor MTBF
OPTOCUPLER HAND BOOK
TRANSISTOR mosfet
transistor R1d
R24 transistor
optocupler
transformer mtbf
R18A
R22E
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MMAD1109
Abstract: MMAD130 MMAD1103 MMAD1105 MMAD1107
Text: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MMAD130/D
MMAD130/D
MMAD1109
MMAD130
MMAD1103
MMAD1105
MMAD1107
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Untitled
Abstract: No abstract text available
Text: HL-AF-3528S9FU57GH183BC-A RED \ GREEN \ BLUE Description Features zSUITABLE FOR ALL SMT ASSEMBLY AND on GaAs substrate Light Emitting Diode. SOLDER PROCESS. ON TAPE AND REEL. The Blue source color devices are made with GaN on 2000PCS / REEL. SiC Light Emitting Diode.
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HL-AF-3528S9FU57GH183BC-A
2000PCS
22Pcs.
1000Hrs.
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A1276
Abstract: NX5315 NX5315EH NX5315EK PX10160E laser gpon
Text: PRELIMINARY DATA SHEET LASER DIODE NX5315 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These
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NX5315
A1276
NX5315EH
NX5315EK
PX10160E
laser gpon
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NX5313EH
Abstract: NX5313 NX5313EK PX10160E A1276 laser gpon
Text: PRELIMINARY DATA SHEET LASER DIODE NX5313 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5313 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These
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NX5313
NX5313EH
NX5313EK
PX10160E
A1276
laser gpon
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX7335 Series 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION DESCRIPTION The NX7335 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial module with single mode
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NX7335
NX7335AN-AA
NX7335BN-AA
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VB-2510
Abstract: s 6352 GB 2510 zener 6352
Text: Datasheet Shunt-Diode Barrier 0359 Description The SenGenuity Shunt-Diode Barrier is an intrinsically safe zener diode safety barrier which limits excessive energy into a hazardous location. The barrier is designed to be used in conjunction with a SenGenuity VC-2xxx Series Converter and SenGenuity VS-25xx Series
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VS-25xx
200mA
VB-2510
s 6352
GB 2510
zener 6352
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NX5315EH
Abstract: NX5315EH-AZ
Text: LASER DIODE NX5315EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.
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NX5315EH
NX5315EH
PL10531EJ03V0DS
NX5315EH-AZ
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX5315EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.
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NX5315EH
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Untitled
Abstract: No abstract text available
Text: VUB 135-22NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System VRRM Fast Recovery Diode = 2200 V VCES IGBT = 800 V VCES = 700 V IDAVM00 = 50 A IC80 = = 80 A IFSM45 = 000 A VF25 = 3. V VCE25 = 3.0 V
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135-22NO1
IDAVM100
IFSM45
VF125
VCE125
VUB135-22NO1
E72873
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NX5315EH
Abstract: PX10160E
Text: PRELIMINARY DATA SHEET LASER DIODE NX5315EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.
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NX5315EH
NX5315EH
PX10160E
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NX5311
Abstract: NX5311GH NX5311GK PX10160E
Text: PRELIMINARY DATA SHEET LASER DIODE NX5311 Series 1 310 nm FOR 1.25 Gb/s, FTTH PON InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5311 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.
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NX5311
NX5311GH
NX5311GK
PX10160E
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BAV170LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAV170LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV170LT1 Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times
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BAV170LT1
BAV170LT1
BAV170LT3
inch/10
236AB)
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BAW156LT1
Abstract: BAW156LT3
Text: MOTOROLA Order this document by BAW156LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 Motorola Preferred Device • Low Leakage Current Applications • Medium Speed Switching Times
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BAW156LT1/D
BAW156LT1
BAW156LT1
BAW156LT3
inch/10
236AB)
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FF1400R12IP4 PrimePACK 3 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF1400R12IP4
367C4326BC
97F6F8
36F1322
A2CB36
1231423567896AB
4112CD3567896EF
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IFS100B12N3E4
Abstract: C5363 IFS100B12N3E4B
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current
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IFS100B12N3E4
428654F4
BCFC24
E32DC
BCFC26
E32DC6
6734F
9C46E4
BC33694
1231423567896AB
C5363
IFS100B12N3E4B
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FF900R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF900R12IP4
367C4326BC
97F6F8
36F1322
A2CB36
1231423567896AB
4112CD3567896EF
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diode c24 06 6D
Abstract: LTC4098-3.6
Text: Technische Information / technical information FF450R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF450R12IE4
326A11
89F6F8
36F1322
B2CC36
DC336E
1231423567896AB
4112CD3567896EF
diode c24 06 6D
LTC4098-3.6
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Transistor motorola 418
Abstract: mosfet amp ic MGW12N120D 305 Power Mosfet MOTOROLA 305 Mosfet MOTOROLA Motorola 720 transistor
Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247
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MGW12N120D/D
MGW12N120D
MGW12N120D/D*
Transistor motorola 418
mosfet amp ic
MGW12N120D
305 Power Mosfet MOTOROLA
305 Mosfet MOTOROLA
Motorola 720 transistor
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transistor IC 1557 b
Abstract: MGW20N60D motorola 803 transistor
Text: MOTOROLA Order this document by MGW20N60D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW20N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247
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MGW20N60D/D
MGW20N60D
MGW20N60D/D*
transistor IC 1557 b
MGW20N60D
motorola 803 transistor
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mosfet amp ic
Abstract: transistor motorola 236 MGY25N120D
Text: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY25N120D/D
MGY25N120D
MGY25N120D/D*
mosfet amp ic
transistor motorola 236
MGY25N120D
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C26B
Abstract: GDS C25/0 diode e61 GDS C25/1231423567896AB
Text: Technische Information / technical information FF900R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF900R12IE4
326A11
78F6F8
36F1322
A2CB36
CC236D
1231423567896AB
4112CD3567896EF
C26B
GDS C25/0
diode e61
GDS C25/1231423567896AB
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diode Z47
Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Text: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352
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HN2D01FU
HN2D02FU
OT-23MOD)
02CZ5
diode Z47
z43 diode
Z5.6
Z3.3
S360 DIODE
diode Z27
S368
diode zener z6
1s diode
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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