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    DIODE AA 119 Search Results

    DIODE AA 119 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE AA 119 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    50-90mm

    Abstract: 95-06DA
    Text: Fast Recovery Epitaxial Diode FRED Module MEA 95-06 DA VRRM = 600 V MEK 95-06 DA IFAV = 95 A trr = 250 ns 3 TO-240 AA 2 VRSM V 600 V RRM 1 Type V MEA95-06 DA 600 1 2 MEK 95-06 DA 3 1 2 3 Symbol Test Conditions I FRMS IFAV ① I FRM Tcase = 75°C Tcase = 75°C; 180° sine


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    MEA95-06 O-240 D-68623 50-90mm 95-06DA PDF

    DIODE 03

    Abstract: MAX6326 MAX6375 MAX6381 MAX6801 AN1195
    Text: SUPERVISORY/VOLTAGE MONITOR CIRCUITS Application Note 1195: Sep 09, 2002 Maximize Battery Life and Minimize Replacements The MAX6326 µP supervisor is used in an application to provide a battery switchover circuit when the wall adapter is disconnected. The reset output drives an external


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    MAX6326 MAX6326: MAX6375: MAX6381: MAX6801: com/an1195 DIODE 03 MAX6326 MAX6375 MAX6381 MAX6801 AN1195 PDF

    automotive microprocessor

    Abstract: AN1195 APP1195 MAX6326 MAX6375 MAX6381 MAX6801 Diode 0.6V
    Text: Maxim > App Notes > AUTOMOTIVE MICROPROCESSOR SUPERVISOR CIRCUITS Keywords: uP supervisor, voltage monitoring, battery-power, push-pull, reset output, microprocessor supervisor Sep 09, 2002 APPLICATION NOTE 1195 Maximize Battery Life and Minimize Replacements


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    MAX6326 com/an1195 MAX6326: MAX6375: MAX6381: MAX6801: AN1195, APP1195, Appnote1195, automotive microprocessor AN1195 APP1195 MAX6375 MAX6381 MAX6801 Diode 0.6V PDF

    30PA104-AML

    Abstract: LED 020 AML21 30PA101-AML AML26G
    Text: Interactive Catalog Supplements Catalog PDFs If you need detailed product information, or help choosing the right product for your application, see our Interactive Catalog. Use the Interactive Catalog to access the most complete and up-to-date information available.


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    PDF

    MICRO SWITCH AML 20 SERIES

    Abstract: AML26G AML26 AML21 SERIES
    Text: Interactive Catalog Supplements Catalog PDFs If you need detailed product information, or help choosing the right product for your application, see our Interactive Catalog. Use the Interactive Catalog to access the most complete and up-to-date information available.


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    AML26G

    Abstract: aml56 MML21K RED RECTANGULAR NEON CLIP LENS MML24 AML34EBA4AA01
    Text: Honeywell Sensing and Control AML/MML Selection Guide Honeywell Sensing and Control AML/MML Selection Guide AML11 Solid state pushbutton switches AML11 INCANDESCENT OR NON-LIGHTED DISPLAY ORDER GUIDE AML11B B A 2 Housing Type Bezel Color Incandescent Lamp Type


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    AML11 AML11B AML11B AML11C AML11E AML11F AML11G AML11H AML11J AML26G aml56 MML21K RED RECTANGULAR NEON CLIP LENS MML24 AML34EBA4AA01 PDF

    AML20 SERIES

    Abstract: AML30 aml20 AML11G AML 30 series AML23EBA2 AML59-S AML60 AML13 AML 20 SERIES SQUARE RED AND WHITE PUSH BUTTON
    Text: Interactive Catalog Supplements Catalog PDFs If you need detailed product information, or help choosing the right product for your application, see our Interactive Catalog. Use the Interactive Catalog to access the most complete and up-to-date information available.


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    AML75 AML61 AML76 AML20 SERIES AML30 aml20 AML11G AML 30 series AML23EBA2 AML59-S AML60 AML13 AML 20 SERIES SQUARE RED AND WHITE PUSH BUTTON PDF

    thyristor control arc welding rectifier circuit

    Abstract: 400 amp SCR used for welding rectifier welding transformer SCR ABB thyristor modules PN5-10DA 400 amp thyristor used for welding rectifier MDS100 three phase triac control arc welder inverter 3KW INDUCTION HEATING POWER SUPPLY
    Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing solid state relays, thyristor modules, diode modules, thyristor diode modules, fast recovery diode, single phase & three phase bridge rectifier and press fit diodes etc. along with about 150


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    ISO9001 DXC-614Heatsink thyristor control arc welding rectifier circuit 400 amp SCR used for welding rectifier welding transformer SCR ABB thyristor modules PN5-10DA 400 amp thyristor used for welding rectifier MDS100 three phase triac control arc welder inverter 3KW INDUCTION HEATING POWER SUPPLY PDF

    MICRO SWITCH AML 30 SERIES

    Abstract: MICRO SWITCH AML 20 SERIES PUSHBUTTON MICRO SWITCH AML 20 SERIES AML20 AML30 30PA101-AML AML 20 SERIES SQUARE RED AND WHITE PUSH BUTTON AML10 AML27 aml 20
    Text: Interactive Catalog Supplements Catalog PDFs If you need detailed product information, or help choosing the right product for your application, see our Interactive Catalog. Use the Interactive Catalog to access the most complete and up-to-date information available.


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    AML75 AML61 AML76 MICRO SWITCH AML 30 SERIES MICRO SWITCH AML 20 SERIES PUSHBUTTON MICRO SWITCH AML 20 SERIES AML20 AML30 30PA101-AML AML 20 SERIES SQUARE RED AND WHITE PUSH BUTTON AML10 AML27 aml 20 PDF

    buz 350 equivalent

    Abstract: BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309
    Text: Typenübersicht Selection Guide • Leistungstransistoren Forts. ■ Typ VDS ■ Type V 50 50 60 50 50 60 50 50 50 50 100 100 100 100 200 200 200 200 500 500 500 1000 1000 1000 1000 400 400 400 60 60 50 50 50 ■ BUZ 10 ■ BUZ 10L ■ BUZ 10S2 ■ BUZ 11


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    O-220 O-218 buz 350 equivalent BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309 PDF

    AA119

    Abstract: diode aa119 DIODE AA 119 tfk 4 119 aa119 diode TFK 939 Germanium Diode aa119 germanium point contact diode diode tfk "Point Contact Diode"
    Text: AA 119 'W Germanium-Spitzendiode Germanium point contact diode Anwendungen: Hochohmige Demodulatorschaltungen. Als Diodenpaar für Diskriminator- und Ratio­ detektorschaltungen. Applications: High impedance demodulator circuits. Matched pairs for discriminator and ratio detector


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    10-mA AA119 diode aa119 DIODE AA 119 tfk 4 119 aa119 diode TFK 939 Germanium Diode aa119 germanium point contact diode diode tfk "Point Contact Diode" PDF

    21l1

    Abstract: 22L2
    Text: Optointerrupter S p e c ific a tio n s H21L1, H21L2 Optointerrupter G aA s Infrared Emitting Diode and Microprocessor Compatible Schmitt Trigger Module with 1mm Aperture MILLIMETERS ' sy m bo l!


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    H21L1, H21L2 21l1 22L2 PDF

    DIN 50014 STANDARD

    Abstract: K102P3 K1793 F119 K102 K102P2
    Text: TELEFUNKEN ELECTRONIC w t> m IALGG a'jeoo'ìb o o o 7 ?si b K 102 P TTdtLIKFyMKiKI electronic Creative Technologies - - T ~ ÿ / - * 3 Optically Coupled Isolator C onstruction: Emitter: Detector: G aA s IR Emitting Diode Silicon N PN Epitaxial Planar Phototransistor


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    D0077S1 flL-1000 DIN 50014 STANDARD K102P3 K1793 F119 K102 K102P2 PDF

    OL391N-03

    Abstract: OL392N-03
    Text: O K I electronic com ponents QL392N-03, QL3492N-03 1.3 im Low-Power Laser-Diode Coaxial Module GENERAL DESCRIPTION The OL392N-Ü3 and OL3492N-03 are 1.3 (un, M Q W InG aA sP/ InP laser-diode coaxial m odules w ith single-m ode fiber pigtails. These m odules are optim al light sources for optical subscriber loops and


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    QL392N-03, QL3492N-03 OL392N-CB b7H4H40 OL391N-03, OL3492N-Q3 OL392N-03 b7242HD 0G22512 OL391N-03 OL392N-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: HL1221AC Laser Diode Description H L 1221A C is a 1.2 fim In G aA sP laser diode with d o u b le h etero ju n ctio n stru ctu re. It is su itable as a light source in fiberoptic c o m ­ m u n icatio n s and various o th er types o f optical e q u ip m en t.


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    HL1221AC PDF

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Fast Recovery Epitaxial Diode FRED Module MEA 95-06 DA MEK 95-06 DA VRRM = 600 V lFAV = t[r = 250 ns TO-240 AA V_ V_ 600 MEA95- 06 DA 600 1 2 95 A 3 MEK 95- 06 DA 3 1 2 3 i_ - i i _ Symbol Test C onditions


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    O-240 MEA95- Mbfib52h PDF

    95-06DA

    Abstract: No abstract text available
    Text: DIXYS Fast Recovery Epitaxial Diode FRED Module MEA 95-06 DA MEK 95-06 DA RRM 'FAV t rr = 600 V = 95 A = 250 ns TO-240 AA 600 RRM Type V MEA95-06 DA 600 1 Symbol Test Conditions ^FRMS Ifav 1 Ifrm Tease = T case = Ifsm T VJ l2t MEK 95-06 DA 2 1 2 Maximum Ratings


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    O-240 MEA95-06 M5x10 80-----------------J 95-06DA PDF

    2f5 transistor

    Abstract: No abstract text available
    Text: 1 29E D aa3st»as oogmstô 3 SIEG ^ j t - r r BF 967 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF fo r in p u t stag e s up to 9 0 0 M H z BF 967 is a PNP silicon UHF planar transistor with passivateci surface in a low-capacitance plastic package similar to T 0 119 50 B 3 DIN 41867 . The transistor is particularly suitable


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    PDF

    VL250

    Abstract: No abstract text available
    Text: SIEMENS LH 1191 High-Voltage SoUd State Relay • FEA TU R ES • • • • • • 1500 Vrms input/output isolation High-surge capability Low ON-resistance Clean, bounce-free switching dv/dt typically better than 500 V/|is Low power consumption • Monolithic IC reliability


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    LH1191 LH1191AT1/AAB1 VL250 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power MOSFET E R F W FEATURES /I8 4 0 A B V dss = 5 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA Max. @ VOS= 500V


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    IRFW/I840A PDF

    BUP 312

    Abstract: buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203
    Text: SIEMENS Typenübersicht Selection Guide Leistungstransistoren Typ Type • BUZ 10 ■ BUZ 10L ■ BUZ10S2 ■ BUZ 11 ■ BUZ11A BUZ11S2 ■ BUZ 11 AL ■ BUZ 12 ■ BUZ12A ■ BUZ 12AL BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B


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    BUZ10S2 BUZ11A BUZ11S2 BUZ12A O-220 O-218 BUP 312 buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203 PDF

    MOSFET IRF840

    Abstract: sec irf840 SEC IRF 640 power MOSFET IRF840 IRF840 n-channel mosfet mosfet-irf840 IRF 250V 100A IRF 640 mosfet IRF840
    Text: IRF840 A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .8 5 Î1 8 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V


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    IRF840 MOSFET IRF840 sec irf840 SEC IRF 640 power MOSFET IRF840 IRF840 n-channel mosfet mosfet-irf840 IRF 250V 100A IRF 640 mosfet IRF840 PDF

    21N60

    Abstract: a 1712 mosfet s300h 21N55 247 AA
    Text: I X Y S C0RP IDE ° 1 MbflbSatj 00D0342 □ IX Y S I IXTH21N60, 55 IXTM21N60, 55 Parameter Sym. IXTH21N55 IXTM21N55 IXTH21N60 IXTM21N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rqs = 1.0Mfl) (1) Vdgr 550 600 Vdc Gate-Source Voltage Continuous


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    00D0342 IXTH21N60, IXTM21N60, IXTH21N55 IXTM21N55 IXTH21N60 IXTM21N60 O-204 O-247 21N60 a 1712 mosfet s300h 21N55 247 AA PDF

    irf 729 power mosfet

    Abstract: irf 729 IRF MOSFET driver IRFP440 IRF 250V 100A
    Text: IRFP440 A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology II D ♦ Lower Input Capacitance 00 cn ^DS on = ♦ Rugged Gate Oxide Technology 0 .8 5 Î1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V


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    IRFP440 irf 729 power mosfet irf 729 IRF MOSFET driver IRFP440 IRF 250V 100A PDF