schottky barrier diode b22
Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
schottky barrier diode b22
FCH20U10
Schottky Diode B29
fcu20a40
10ERB20
niec FCHS10A12
FCQS10A065
EC30QSA045
FCHS10A12
fchs20a08
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smd diode B3
Abstract: GHB-1206L-B3
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1206L-B3 Features !3.2mmx1.6mm !LOW POWER !WIDE !IDEAL Description SMT LED, 1.8mm THICKNESS. The Blue source color devices are made CONSUMPTION. with GaN on Sapphire Light Emitting Diode.
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GHB-1206L-B3
2000PCS
DEC/05/2002
smd diode B3
GHB-1206L-B3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM B3-Class IGBT w/Diode VCES IC110 VCE sat tfi(typ) IXGR72N60B3D1 (Electrically Isolated Back Surface) = = ≤£ = 600V 40A 1.80V 90ns Medium Speed Low Vsat PT IGBTs for 5-40 kHz Switching ISOPLUS 247TM Symbol Test Conditions
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IC110
IXGR72N60B3D1
247TM
IF110
RB160
2x61-06A
72N60B3
02-10-09-D
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Untitled
Abstract: No abstract text available
Text: SKCD 81 C 060 I3 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions +, "5647 "59, Values Units %- / 0 12 "+ / 3 4
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Abstract: No abstract text available
Text: SKCD 81 C 120 I3 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions +, "5647 "59, Values Units %- / 0 12 "+ / 3 4
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Abstract: No abstract text available
Text: SKCD 81 C 120 I HD power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions +, "5647 "5:, Values Units % - / 0 12 "+ / 3 4
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150GB123D
Abstract: No abstract text available
Text: SKM 150GB123D Absolute Maximum Ratings Symbol Conditions IGBT *5 &* &*8 95 1<58+1& = 1 + + 4* /300 Inverse diode SEMITRANSTM 3 IGBT Modules & &(8 1 2 /3 70 4* 2 . &( 2 .0 A ?A 1; 2 .30 4* .30 .00 /00 + + .00 + /00 .B3 B00 + +
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150GB123D
150GB123D
150GAL123D
150GAR123D
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Untitled
Abstract: No abstract text available
Text: SKCD 81 C 120 I HD Absolute Maximum Ratings Symbol Conditions +, "5647 "5:, Values Units % - / 0 12 "+ / 3 4 % / 12 % - 8 / 0 12 % - / 0 12 9 3 4 4 % - 8 / 0 12 4 ; 0 12 % - 8 SEMICELL CAL-DIODE
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Abstract: No abstract text available
Text: SKCD 81 C 120 I HD Absolute Maximum Ratings Symbol Conditions +, "5647 "5:, Values Units % - / 0 12 " + / 3 4 % / 12 % - 8 / 0 12 % - / 0 12 9 3 4 4 % - 8 / 0 12 4 ; 0 12 % - 8 SEMICELL CAL-DIODE
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12its
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Untitled
Abstract: No abstract text available
Text: SKCD 81 C 120 I3 Absolute Maximum Ratings Symbol Conditions +, "5647 "59, Values Units % - / 0 12 " + / 3 4 % / 12 %- 8 / 0 12 % - / 0 12 ( 4 4 %- 8 / 0 12 : 4 ; 0 12 %- 8 SEMICELL CAL-DIODE
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Abstract: No abstract text available
Text: SKCD 81 C 060 I3 Absolute Maximum Ratings Symbol Conditions +, "5647 "59, Values Units % - / 0 12 " + / 3 4 % / 12 %- 8 / 0 12 % - / 0 12 00 4 4 %- 8 / 0 12 4 : 0 12 %- 8 SEMICELL CAL-DIODE
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Abstract: No abstract text available
Text: EMC1402 1°C Temperature Sensor with Beta Compensation PRODUCT FEATURES Datasheet GENERAL DESCRIPTION The EMC1402 is a high accuracy, low cost, System Management Bus SMBus temperature sensor. Advanced features such as Resistance Error Correction (REC), Beta Compensation (to support 90nm and 65nm
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EMC1402
EMC1402
MO-187
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Untitled
Abstract: No abstract text available
Text: SKM 150GB123D Absolute Maximum Ratings Symbol Conditions IGBT *5 &* &*8 95 SKM 150GB123D 1<58+1& = 1 Typical Applications # 4* /300 & &(8 1 2 /3 70 4* 2 . &( 2 .0 A ?A 1; 2 .30 4* .30 .00 /00
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150GB123D
150GB123D
150GAL123D
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IGBT MOTOR CONTROL
Abstract: IGBT K 40 T 2002 MJ75
Text: MKI 75-06 A7 IC25 = 90 A = 600 V VCES VCE sat typ. = 2.1 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Preliminary Data B3 Features IGBTs ● Conditions VCES TVJ = 25°C to 150°C Maximum Ratings ● ● 600 V ± 20 V 90 60 A A ICM = 120
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MWI7506A7
IGBT MOTOR CONTROL
IGBT K 40 T 2002
MJ75
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NTC resistor T5
Abstract: MKI 75-06 A7
Text: MKI 75-06 A7 MKI 75-06 A7T IC25 = 90 A VCES = 600 V VCE sat typ.= 2.1 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Type: 13 NTC - Option: MKI 75-06 A7 MKI 75-06 A7T T1 without NTC with NTC T T5 D1 1 9 2 10 D5 16 14 T2 T T6 D2 3 11 4 12
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MWI7506A7
NTC resistor T5
MKI 75-06 A7
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FDJ1028N
Abstract: SC75
Text: FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench MOSFET Features Applications • 3.2 A, 20 V. RDS ON = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V ■ Battery management General Description ■ Low gate charge ■ High performance trench technology for extremely low
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FDJ1028N
FDJ1028N
SC75
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SMD ZENER DIODE MARKING CODE G3
Abstract: marking code gc SMD zener PZU11 zener diode SMD marking code 27 4B pzuxb smd marking KD SMD MARKING GP 728 smd marking KH Zener diode smd marking h5 PZU13
Text: PZUxB series Single Zener diodes in a SOD323F package Rev. 01 — 7 March 2006 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD323F SC-90 very small and flat lead Surface Mounted Device (SMD) plastic package.
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OD323F
OD323F
SC-90)
SMD ZENER DIODE MARKING CODE G3
marking code gc SMD zener
PZU11
zener diode SMD marking code 27 4B
pzuxb
smd marking KD
SMD MARKING GP 728
smd marking KH
Zener diode smd marking h5
PZU13
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Untitled
Abstract: No abstract text available
Text: FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench MOSFET Features Applications • 3.2 A, 20 V. ■ Battery management RDS ON = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V ■ Low gate charge ■ High performance trench technology for extremely low
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FDJ1028N
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PS18
Abstract: SV18
Text: VDI 75-12P1 VII 75-12P1 VID 75-12P1 VIO 75-12P1 IC25 = 92 A = 1200 V VCES VCE sat typ. = 2.7 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 NTC X16 T16 NTC IK10 X16 AC1 F1 Pin arangement see outlines Features
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75-12P1
75-12P1
81T120
PS18
SV18
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Untitled
Abstract: No abstract text available
Text: VDI 75-12P1 VII 75-12P1 VID 75-12P1 VIO 75-12P1 IC25 = 92 A = 1200 V VCES VCE sat typ. = 2.7 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 X15 F1 NTC Pin arangement see outlines Features Symbol Conditions
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75-12P1
75-12P1
81T120
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IRFR912
Abstract: No abstract text available
Text: IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S
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IRFR9120,
IRFU9120,
SiHFR9120
SiHFU9120
O-252)
O-251)
IRFR912
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SON50P300X300X80-11WEED3M
Abstract: No abstract text available
Text: A8480 Boost Regulator for Display Bias or LED Driver Features and Benefits Description ▪ Output disconnect during shutdown ▫ 1 A shutdown current ▪ 2.7 to 9 V input ▫ Operate with 1 or 2 Li+ battery input supply ▪ Output voltage up to 23 V ▪ 1.2 MHz switching frequency
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A8480
A8480
SON50P300X300X80-11WEED3M
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Untitled
Abstract: No abstract text available
Text: • International S Rectifier 4Ö554S2 001b?b3 TbO ■ INR INTERNATIONAL RECTIFIER bSE » SERIES IRK.F112 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate
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554S2
4fl55452
10ohm
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Untitled
Abstract: No abstract text available
Text: bbS3 T3 i 00 2 b3 ^b 73a h a p x Philips Semiconductors Preliminary specification BB134 UHF variable capacitance diode N AUER PHILIPS/DISCRETE blE J> Q U IC K R E F E R E N C E DATA DESCRIPTION The BB134 is a silicon, double-implanted variable capacitance diode in planar
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BB134
BB134
OD323.
BB135,
MBC780
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