H5N2513PL
Abstract: H5N2513PL-E PRSS0004ZF-A
Text: H5N2513PL Silicon N Channel MOS FET High Speed Power Switching REJ03G1243-0200 Rev.2.00 May 13, 2009 Features • Low on-resistance • High speed switching • Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZF-A Package name: TO-3PL
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H5N2513PL
REJ03G1243-0200
PRSS0004ZF-A
H5N2513PL
H5N2513PL-E
PRSS0004ZF-A
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PRSS0004ZE-A
Abstract: H5N3008P H5N3008P-E SC-65 renesas shipping information
Text: H5N3008P Silicon N Channel MOS FET High Speed Power Switching REJ03G0539-0100 Rev.1.00 Feb.23.2005 Features • • • • Low on-resistance Low leakage current High speed switching Built-in fast recovery diode Outline PRSS0004ZE-A Package name: TO-3P D
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H5N3008P
REJ03G0539-0100
PRSS0004ZE-A
pul-900
Unit2607
PRSS0004ZE-A
H5N3008P
H5N3008P-E
SC-65
renesas shipping information
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H5N3008P-E
Abstract: PRSS0004ZE-A SC-65 H5N3008P
Text: H5N3008P Silicon N Channel MOS FET High Speed Power Switching REJ03G0539-0300 Rev.3.00 Oct 16, 2006 Features • • • • Low on-resistance Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A
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H5N3008P
REJ03G0539-0300
PRSS0004ZE-A
H5N3008P-E
PRSS0004ZE-A
SC-65
H5N3008P
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H5N5016PL-E
Abstract: H5N5016PL PRSS0004ZF-A
Text: H5N5016PL Silicon N Channel MOS FET High Speed Power Switching REJ03G0175-0300 Rev.3.00 May 13, 2009 Features • • • • Low on-resistance Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZF-A
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H5N5016PL
REJ03G0175-0300
PRSS0004ZF-A
H5N5016PL-E
H5N5016PL
PRSS0004ZF-A
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H5N2513PL
Abstract: H5N2513PL-E PRSS0004ZF-A
Text: H5N2513PL Silicon N Channel MOS FET High Speed Power Switching REJ03G1243-0100 Rev.1.00 Jul 25, 2008 Features • Low on-resistance • High speed switching • Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZF-A Package name: TO-3PL
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H5N2513PL
REJ03G1243-0100
PRSS0004ZF-A
H5N2513PL
H5N2513PL-E
PRSS0004ZF-A
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H5N2522LS
Abstract: H5N2522LSTL-E
Text: H5N2522LS Silicon N Channel MOS FET High Speed Power Switching REJ03G1667-0100 Rev.1.00 Apr 23, 2008 Features • • • • Low on-resistance Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0004AE-B
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H5N2522LS
REJ03G1667-0100
PRSS0004AE-B
H5N2522LS
H5N2522LSTL-E
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Untitled
Abstract: No abstract text available
Text: H5N3007FN Silicon N Channel MOS FET High Speed Power Switching REJ03G1860-0100 Rev.1.00 Nov 09, 2009 Features • • • • Low on-resistance Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AB-A
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H5N3007FN
REJ03G1860-0100
PRSS0003AB-A
O-220FN)
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H5N2512FN-E
Abstract: H5N2512FN
Text: ` H5N2512FN Silicon N Channel MOS FET High Speed Power Switching REJ03G1767-0100 Rev.1.00 Jul 02, 2009 Features • • • • Low on-resistance Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AB-A
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H5N2512FN
REJ03G1767-0100
PRSS0003AB-A
O-220FN)
H5N2512FN-E
H5N2512FN
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H5N2512CF
Abstract: H5N3007CF Diode BAY 32
Text: H5N2512CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0481-0100 Rev.1.00 Nov.26.2004 Features • • • • Low on-resistance Low leakage current High Speed Switching Built-in fast recovery diode Outline TO-220CFM D 1. Gate 2. Drain 3. Source
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H5N2512CF
REJ03G0481-0100
O-220CFM
Unit2607
H5N2512CF
H5N3007CF
Diode BAY 32
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H5N5015P-E
Abstract: H5N5015P PRSS0004ZE-A SC-65
Text: H5N5015P Silicon N Channel MOS FET High Speed Power Switching REJ03G1117-0100 Previous: ADE-208-1522 Rev.1.00 Sep 07, 2005 Features • • • • • Low on-resistance Low leakage current High speed switching Low gate charge Built-in fast recovery diode
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H5N5015P
REJ03G1117-0100
ADE-208-1522)
PRSS0004ZE-A
H5N5015P-E
H5N5015P
PRSS0004ZE-A
SC-65
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H5N3007CF
Abstract: No abstract text available
Text: H5N3007CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0473-0100 Rev.1.00 Nov.11.2004 Features • • • • Low on-resistance Low leakage current High Speed Switching Built-in fast recovery diode Outline TO-220CFM D 1. Gate 2. Drain 3. Source
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H5N3007CF
REJ03G0473-0100
O-220CFM
Unit2607
H5N3007CF
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H5N5012P
Abstract: H5N5012P-E
Text: H5N5012P Silicon N Channel MOS FET High Speed Power Switching REJ03G0378-0200Z Rev.2.00 Jun.17.2004 Features • • • • Low on-resistance Low leakage current High speed switching Built-in fast recovery diode Outline TO-3P D 1. Gate 2. Drain Flange 3. Source
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H5N5012P
REJ03G0378-0200Z
H5N5012P
H5N5012P-E
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H5N5016PL
Abstract: No abstract text available
Text: H5N5016PL Silicon N Channel MOS FET High Speed Power Switching REJ03G0175-0200Z Rev.2.00 Jul.02.2004 Features • • • • Low on-resistance Low leakage current High speed switching Built-in fast recovery diode Outline TO-3PL D G S 1 1. Gate 2. Drain Flange
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H5N5016PL
REJ03G0175-0200Z
H5N5016PL
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H5N5015P
Abstract: No abstract text available
Text: H5N5015P Silicon N Channel MOS FET High Speed Power Switching ADE-208-1522 Z Rev.0 Apr. 2002 Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge • Built-in fast recovery diode Outline TO–3P D G 1 S 2 3
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H5N5015P
ADE-208-1522
D-85622
D-85619
H5N5015P
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RJP63k2
Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching
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R07CS0003EJ0100
RJP63k2
rjp63f3
rjp30e2
RJP30H2
RJJ0319DSP
rjp63f
RJP30H3
rjj0319
BCR1AM-12A equivalent
RJJ0606
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RJJ0319DSP
Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?
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R07CS0003EJ0200
RJJ0319DSP
BCR8PM equivalent
RJP30H2
N0201
rjj0319
NP109N055PUJ
rjk5020
RJP30E2DPP
NP75N04YUG
lg washing machine circuit diagram
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rjp6065
Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance
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Hdd spindle motor
Abstract: HAT2256R HAT3038 HAT3019R HAT1132R HAT2276R HAT3037R polygon mirror polygon mirror motor RQK0603DQA
Text: April 2010 Renesas Electronics Power MOSFETs for Small Motor Drive Features Low ON resistance Low voltage drive 4V Small package Built-in high-speed diode Merits Low loss, High efficiency Available direct drive from logic IC and reduction of the number of any parts
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O-220CFM
H5N5004PL
H5N5005PL
RJL5012DPP
O-220FN
RJL5013DPP
RJL5014DPP
RJL5014DPK
Hdd spindle motor
HAT2256R
HAT3038
HAT3019R
HAT1132R
HAT2276R
HAT3037R
polygon mirror
polygon mirror motor
RQK0603DQA
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Untitled
Abstract: No abstract text available
Text: SK10DGDL12T4ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter,Chopper C:DL 6: 6:ST C7DL 3' F HI J:E -%2&'' ,.4& */'& 'B& /K/&1 3' F HI PQNR J: 6:STF U V 6:%,+E .B F M +' 3X Diode - Inverter,Chopper SEMITOP 3 3-phase bridge rectifier +
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SK10DGDL12T4ET
PL-00&
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DIODE H5N
Abstract: No abstract text available
Text: SK15DGDL12T4ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter,Chopper C:DL 6: 6:ST C7DL 3' F HI J:E -%2&'' ,.4& */'& 'B& /K/&1 3' F HI PQNR J: 6:STF U V 6:%,+E .B F M +' 3X Diode - Inverter,Chopper SEMITOP 3 3-phase bridge rectifier +
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SK15DGDL12T4ET
PL-00&
DIODE H5N
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Hitachi DSA0076
Abstract: H5N5004PL
Text: H5N5004PL Silicon N Channel MOS FET High Speed Power Switching ADE-208-1381 Z Target Specification 1st. Edition Mar. 2001 Features • • • • • • Low on-resistance: R DS(on) = 0.09 typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 280 ns typ (at VGS = 10 V, VDD = 250 V, ID = 25 A)
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H5N5004PL
ADE-208-1381
Hitachi DSA0076
H5N5004PL
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Hitachi DSA0076
Abstract: H5N5005PL
Text: H5N5005PL Silicon N Channel MOS FET High Speed Power Switching ADE-208-1382 Z Target Specification 1st. Edition Mar. 2001 Features • • • • • • Low on-resistance: R DS(on) = 0.064 typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 300 ns typ (at VGS = 10 V, VDD = 250 V, ID = 30 A)
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H5N5005PL
ADE-208-1382
Hitachi DSA0076
H5N5005PL
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H5N5004PL
Abstract: No abstract text available
Text: H5N5004PL Silicon N Channel MOS FET High Speed Power Switching ADE-208-1381 Z Target Specification 1st. Edition Mar. 2001 Features • • • • • • Low on-resistance: R DS(on) = 0.09 Ω typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V)
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H5N5004PL
ADE-208-1381
H5N5004PL
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H5N5004PL
Abstract: H5N5004PL-E PRSS0004ZF-A
Text: H5N5004PL Silicon N Channel MOS FET High Speed Power Switching REJ03G1113-0200 Previous: ADE-208-1381 Rev.2.00 Sep 07, 2005 Features • • • • • • Low on-resistance: R DS (on) = 0.09 Ω typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V)
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H5N5004PL
REJ03G1113-0200
ADE-208-1381)
PRSS0004ZF-A
H5N5004PL
H5N5004PL-E
PRSS0004ZF-A
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