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    DIODE IN 4937 Search Results

    DIODE IN 4937 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE IN 4937 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1E-017

    Abstract: diode in 4937
    Text: 1N 4933.1N 4937 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter ,2 Axial lead diode Fast silicon rectifier diodes 1N 4933.1N 4937 Forward Current: 1 A


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    diode 4937

    Abstract: diode 1N 4937 diode IN 4937
    Text: 1N 4933.1N 4937 ,2 Axial lead diode Fast silicon rectifier diodes 1N 4933.1N 4937 Forward Current: 1 A Reverse Voltage: 50 to 600 V Features                 8  9  3  9  9 + /+  3  9  9 +   9 


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    in 4937

    Abstract: No abstract text available
    Text: 1N 4933.1N 4937 ,2 Axial lead diode Fast silicon rectifier diodes 1N 4933.1N 4937 Forward Current: 1 A Reverse Voltage: 50 to 600 V Features                 8  9  3  9  9 + /+  3  9  9 +   9 


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    Untitled

    Abstract: No abstract text available
    Text: 1N 4933.1N 4937 ,2 Axial lead diode Fast silicon rectifier diodes 1N 4933.1N 4937 Forward Current: 1 A Reverse Voltage: 50 to 600 V Features                 8  9  3  9  9 + /+  3  9  9 +   9 


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    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SD175SC200A/B/C SEMICONDUCTOR Technical Data Data Sheet 4937, Rev.- Ultra Fast Trr < 24 nsec SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode


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    PDF SD175SC200A/B/C

    diode 4937

    Abstract: No abstract text available
    Text: SENSITRON SD175SC200A/B/C SEMICONDUCTOR Technical Data Data Sheet 4937, Rev.- Ultra Fast Trr < 24 nsec SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode


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    PDF SD175SC200A/B/C diode 4937

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


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    PDF DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148

    40N60A4D

    Abstract: DIODE 809 200A 40N60A4 Capacitor 400v 80A HGT5A40N60A4D TA49347
    Text: HGT5A40N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input


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    PDF HGT5A40N60A4D HGT5A40N60A4D 150oC. TA49347. 40N60A4D DIODE 809 200A 40N60A4 Capacitor 400v 80A TA49347

    40N60A4D

    Abstract: 40N60A4 HGTG*N60A4D 40N60A HGT1Y40N60A4D MOSFET 40A 600V HGT5A40N60A4D LD26 TA49347
    Text: HGT5A40N60A4D / HGT1Y40N60A4D Data Sheet May 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D and HGT1Y40N60A4D are MOS gated high voltage switching devices combining the best features of a MOSFET and a bipolar transistor. These


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    PDF HGT5A40N60A4D HGT1Y40N60A4D HGT1Y40N60A4D 150oC. TA49347. 100kHz 200kHz 40N60A4D 40N60A4 HGTG*N60A4D 40N60A MOSFET 40A 600V LD26 TA49347

    40N60A4D

    Abstract: TA49347 40N60A4 MOSFET 40A 600V HGT5A40N60A4D LD26
    Text: HGT5A40N60A4D Data Sheet February 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input


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    PDF HGT5A40N60A4D HGT5A40N60A4D 150oC. TA49347. 100kHz 200kHz 40N60A4D TA49347 40N60A4 MOSFET 40A 600V LD26

    40N60A4

    Abstract: 40N60A4D MOSFET 40A 600V HGT5A40N60A4D LD26 TA49347 40N60A TO-247ST
    Text: HGT5A40N60A4D Data Sheet February 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input


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    PDF HGT5A40N60A4D HGT5A40N60A4D 150oC. TA49347. 100kHz 200kHz 40N60A4 40N60A4D MOSFET 40A 600V LD26 TA49347 40N60A TO-247ST

    finisar i2c

    Abstract: finisar 2025 finisar fiber optic transmitter module finisar AN-2025 finisar app note FTR1319 FTR-8519
    Text: Finisar App Note AN-2025 Using the Finisar GBIC I2C Test/Diagnostics Port INTRODUCTION Finisar’s new line of optical GBIC modules incorporates the real-time optical link control system that Finisar pioneered in its previous generation of fiber optic transceivers. Finisar has extended the capabilities of the module definition


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    PDF AN-2025 AT24C01A/02/04/08/16 MIM0503a finisar i2c finisar 2025 finisar fiber optic transmitter module finisar AN-2025 finisar app note FTR1319 FTR-8519

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


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    PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    TRANSISTOR D1960

    Abstract: Eyal Microwave Industry OZ 9966 OZ 9938 dlva Radar Warning Receiver F9140AH fm MODULATOR 4046 SPA-X1-400 FR-2260-UK
    Text: GENERAL MICROWAVE PRODUCT CATALOG Model Number Index .2 Product Index .5


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    Untitled

    Abstract: No abstract text available
    Text: NTMS4937N Power MOSFET 30 V, 13.6 A, N−Channel, SO−8 Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF NTMS4937N NTMS4937N/D

    Untitled

    Abstract: No abstract text available
    Text: NTTFS4937N Power MOSFET 30 V, 75 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF NTTFS4937N NTTFS4937N/D

    4937n

    Abstract: NTMFS4937NT1G NTMFS4937NT3G
    Text: NTMFS4937N Power MOSFET 30 V, 70 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF NTMFS4937N NTMFS4937N/D 4937n NTMFS4937NT1G NTMFS4937NT3G

    4937n

    Abstract: No abstract text available
    Text: NTMFS4937N Power MOSFET 30 V, 70 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF NTMFS4937N NTMFS4937N/D 4937n

    Untitled

    Abstract: No abstract text available
    Text: NTTFS4937N Power MOSFET 30 V, 75 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF NTTFS4937N NTTFS4937N/D

    Untitled

    Abstract: No abstract text available
    Text: NTTFS4937N Power MOSFET 30 V, 75 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF NTTFS4937N NTTFS4937N/D

    NTTFS4937N

    Abstract: NTTFS4937NTAG NTTFS4937NTWG
    Text: NTTFS4937N Power MOSFET 30 V, 75 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF NTTFS4937N NTTFS4937N/D NTTFS4937N NTTFS4937NTAG NTTFS4937NTWG

    transformer calculation IRON CORE

    Abstract: Flyback SANYO RL-5050 inductor 100uH 3A 4n35 optoisolator H1000 INDUCTOR RL5053 n5822 RL5029
    Text: Application Hint 13 A Design Guide for the New BiCMOS LM2575 Family IJÉ*". iiSsíí1!!!. J i P 1^ 'u^S\ I.^WWW|P""»| by G e o rg e Hall an d B ren da K ovacevic Introduction BiCM OS technology has given the classic LM2575 switcher many added benefits. Faster rise/fall times, faster response


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    PDF LM2575 RL5065 RL5066 RL5067 RL5068 RL5069 RL5070 RLS-1500-20 RLS-1500-48 transformer calculation IRON CORE Flyback SANYO RL-5050 inductor 100uH 3A 4n35 optoisolator H1000 INDUCTOR RL5053 n5822 RL5029

    diode BA 159

    Abstract: in4937
    Text: BA 157.BA 159 Fast Silicon Rectifier Schnelle Silizium Gleichrichter Nominal current Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung 400. 1000 V Plastic case Kunststoffgehäuse DO-41 Weight approx. Gewicht ca. —f6 O.E 0.4 g


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    PDF DO-41 UL94V-0 R0D1RS14 DGG174 diode BA 159 in4937

    N4937

    Abstract: No abstract text available
    Text: 1 N 4933.1 N4937 Schnelle Silizium Gleichrichter Fast Silicon Rectifier 1A Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 50. 600 V Plastic case Kunststoffgehäuse - DO-41 Weight approx. Gewicht ca. ¿ 0.8 0.4 g


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    PDF N4937 DO-41 UL94V-0 N4933 N4934 N4935 N4936 R0D1RS14 DGG174 N4937