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    DIODE MOTOROLA 316 Search Results

    DIODE MOTOROLA 316 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MOTOROLA 316 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MJ3001 equivalent

    Abstract: bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent bd139 equivalent transistor BU108 BDT65C equivalent 2sd313 equivalent darlington tip31
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10005*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS


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    MJ10005 MJ10005* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ3001 equivalent bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent bd139 equivalent transistor BU108 BDT65C equivalent 2sd313 equivalent darlington tip31 PDF

    D45H11 equivalent replacement

    Abstract: 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100 MJ10009
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10009*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS


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    MJ10009 Volt32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D45H11 equivalent replacement 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100 PDF

    BU108

    Abstract: BDX33D equivalent BD130 TO126 TIP-551 2SA627 BU100 2SB554 cross reference 2SC2536 2N3025 Transistor 3202 1 A 60
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10007*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode *Motorola Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS


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    MJ10007 Curr32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 BDX33D equivalent BD130 TO126 TIP-551 2SA627 BU100 2SB554 cross reference 2SC2536 2N3025 Transistor 3202 1 A 60 PDF

    2sC144

    Abstract: lc 3101 ST BDW83C BUX98A BU326 BU108 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18604D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 3 AMPERES 1600 VOLTS 100 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network for


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    MJE18604D2 MJE18604D2 Spr32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2sC144 lc 3101 ST BDW83C BUX98A BU326 BU108 BU100 PDF

    2SC1943

    Abstract: bd135 TRANSISTOR REPLACEMENT GUIDE motorola transistor cross reference TRANSISTOR 2sb546 transistor 2SA1046 BU108 TRANSISTOR REPLACEMENT GUIDE c 3198 transistor TIP142 TRANSISTOR REPLACEMENT transistor Electronic ballast mje13007
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18004D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network


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    MJE18004D2 MJE18004D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2SC1943 bd135 TRANSISTOR REPLACEMENT GUIDE motorola transistor cross reference TRANSISTOR 2sb546 transistor 2SA1046 BU108 TRANSISTOR REPLACEMENT GUIDE c 3198 transistor TIP142 TRANSISTOR REPLACEMENT transistor Electronic ballast mje13007 PDF

    pin configuration transistor bd140

    Abstract: TRANSISTOR REPLACEMENT GUIDE BU108 Drive IC 2SC3346 Replacement MOTOROLA BDX54 2sA671 transistor BU326 BU100 transistor NSD134
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network


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    BUL45D2 BUL45D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C pin configuration transistor bd140 TRANSISTOR REPLACEMENT GUIDE BU108 Drive IC 2SC3346 Replacement MOTOROLA BDX54 2sA671 transistor BU326 BU100 transistor NSD134 PDF

    motorola 415 D2PAK

    Abstract: 2N3055 transistor cross reference BU108 2N5686 726 MOTOROLA TRANSISTORS 2sc15 DIODE 2N4002 transistor 2SC1061 transistor bdx54c
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL44D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 700 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network


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    BUL44D2 BUL44D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C motorola 415 D2PAK 2N3055 transistor cross reference BU108 2N5686 726 MOTOROLA TRANSISTORS 2sc15 DIODE 2N4002 transistor 2SC1061 transistor bdx54c PDF

    mj10016

    Abstract: 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent 2sd526 equivalent 2N3773 equivalent MJE371 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage,


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    MJ10015 MJ10016 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent 2sd526 equivalent 2N3773 equivalent MJE371 equivalent PDF

    MJ2955 replacement

    Abstract: diode T 3512 H BD581 free transistor equivalent book 2sc789 BU108 motorola diode cross reference MJE-3439 tip122 pin configuration 2SA756 BU104P
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT33  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS The BUT33 Darlington transistor is designed for high–voltage, high–speed, power


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    BUT33 BUT33 204AE TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJ2955 replacement diode T 3512 H BD581 free transistor equivalent book 2sc789 BU108 motorola diode cross reference MJE-3439 tip122 pin configuration 2SA756 BU104P PDF

    BUT34 equivalent

    Abstract: BU323A equivalent 2N3055 BU108 2SA1046 BUV22 equivalent TIP34C equivalent bc 574 transistor BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT34  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS The BUT34 Darlington transistor is designed for high–voltage, high–speed, power


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    BUT34 BUT34 204AE TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BUT34 equivalent BU323A equivalent 2N3055 BU108 2SA1046 BUV22 equivalent TIP34C equivalent bc 574 transistor BU326 BU100 PDF

    BU108

    Abstract: D44C12 BDX54 electronic ballast with MJE13003 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design


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    MJE18002D2 MJE18002D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 D44C12 BDX54 electronic ballast with MJE13003 BU326 BU100 PDF

    transistor bc 647

    Abstract: 380 darlington to3 ibm motorola 415 D2PAK 726 MOTOROLA TRANSISTORS 3427 motorola transistor 2N6547 DIODE 2N4002 2N5886 Structure BU326 BU108
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The BUD44D2 is state–of–art High Speed High gain BIPolar transistor H2BIP .


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    BUD44D2 BUD44D2 Fully32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B transistor bc 647 380 darlington to3 ibm motorola 415 D2PAK 726 MOTOROLA TRANSISTORS 3427 motorola transistor 2N6547 DIODE 2N4002 2N5886 Structure BU326 BU108 PDF

    CASE 221A Style 1

    Abstract: BU108 BD907 equivalent Darlington NPN Silicon Diode NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2SC144 2N555 BU326 BU100 MJE520 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage,


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    MJ10020 MJ10021 MJ10021 Performa32 TIP73B TIP74 TIP74A TIP74B TIP75 CASE 221A Style 1 BU108 BD907 equivalent Darlington NPN Silicon Diode NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2SC144 2N555 BU326 BU100 MJE520 equivalent PDF

    application MJ10023

    Abstract: BU108 2N6058 2n3055 motor control circuits darlington tip31 mj15004 equivalent BDX54 bd139 equivalent transistor MJ15022 equivalent 2SB56
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS The MJ10022 and MJ10023 Darlington transistors are designed for high–voltage,


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    MJ10022 MJ10023 MJ10023 Performanc32 TIP73B TIP74 TIP74A TIP74B TIP75 application MJ10023 BU108 2N6058 2n3055 motor control circuits darlington tip31 mj15004 equivalent BDX54 bd139 equivalent transistor MJ15022 equivalent 2SB56 PDF

    BC517 spice model

    Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
    Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information


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    VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S PDF

    mbr6045

    Abstract: BR6045 MBR6035 equivalent
    Text: MOTOROLA MBR6035 MBR6045 • SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifiers MBRS045 Is a Motorola Preferred Device . . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact,


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    MBR6035 MBR6045 MBRS045 mbr6045 BR6045 MBR6035 equivalent PDF

    diode sy 164 dl

    Abstract: diode sy 164 02N2222 b6045
    Text: MOTOROLA MBR6035 MBR6045 • SEMICONDUCTOR TECHNICAL DATA Switchm ode Power Rectifiers MBR6045 Is a Motorola Preferred Device . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact.


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    MBR6035 MBR6045 MBR6045 diode sy 164 dl diode sy 164 02N2222 b6045 PDF

    mj10015

    Abstract: mj10016 j10016 mj10 BTA 316 transistor
    Text: MOTOROLA Order this document by MJ10015/D SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS


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    MJ10015/D MJ10015 MJ10016 j10016 mj10 BTA 316 transistor PDF

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 PDF

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    PDF

    HP 5082-7415

    Abstract: MCI4489 5082-7415 HP 7415 MC68HC811A2 j 5804 MC14489 1 -10v led dimmer d 12 pin 2 digit LED display HP 5082 fdk ct
    Text: MOTOROLA S EM IC O N D U C TO R TECHNICAL DATA MC14489 Advance Information M u lti-C h a ra c te r L E D D isp lay/Lam p D river rffi CMOS The MC14489 is a flexible light-emitting-diode driver w hich directly interfaces to individ­ ual lamps, 7-segment displays, or various combinations of both. LEDs wired with common


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    MC14489 HP 5082-7415 MCI4489 5082-7415 HP 7415 MC68HC811A2 j 5804 1 -10v led dimmer d 12 pin 2 digit LED display HP 5082 fdk ct PDF

    B6025L

    Abstract: B6030L B6020L MBR6030L B6015L BR6020L BR6030L mbr6015l
    Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M BR6015L M BR6020L M BR6025L M BR6030L S w it c h m o d e P o w e r R e ctifie rs . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


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    BR6015L BR6020L BR6025L BR6030L BR6030L B6025L B6030L B6020L MBR6030L B6015L mbr6015l PDF

    20A60

    Abstract: RQ 300 W
    Text: MOTOROLA Order this document by MHPM6B1OA6OD/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet M HPM 6B10A60D M H PM 6B20A60D H y b rid P o w e r M o d u le Motorola Preferred Devices Integrated Power Stage for 230 VAC Motor Drives 10, 20 AMP, 600 V HYBRID POWER MODULES


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    6B10A60D MHPM6B10A60D MHPM6B20A60D MHPM6B10A60D/D 20A60 RQ 300 W PDF