PDM5001
Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH
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C3557
PH1503
PH150
PDM5001
PDT400N16
pah60n8cm
PHMB50E6CL
PHT250N16
PHT400N16
PD100KN16
PAH100N8CM
PT76S16
PAT400N16
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marking code PH 200
Abstract: No abstract text available
Text: BAV70WS SMALL SIGNAL DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PH Top View Marking Code: "PH" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 70 V Average Rectified Forward Current
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BAV70WS
OD-323
OD-323
marking code PH 200
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marking code PH 200
Abstract: BAV70WS
Text: BAV70WS SMALL SIGNAL DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PH Top View Marking Code: "PH" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak repetitive reverse voltage VRRM 70 V Average rectified Forward current
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BAV70WS
OD-323
OD-323
marking code PH 200
BAV70WS
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marking code PH 200
Abstract: No abstract text available
Text: BAV70WS SMALL SIGNAL DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PH Top View Marking Code: "PH" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 70 V Average Rectified Forward Current
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BAV70WS
OD-323
OD-323
marking code PH 200
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b1443
Abstract: 455 KHz 34943 UM9552 UM9552S 8 PIN pin diode attenuator TCVF 455 khz if variable
Text: 580 Pleasant St. Watertown, MA 02472 PH: 617 926-0404 FAX: (617) 924-1235 UM9552 Features • • • • PIN DIODE ATTENUATOR Low Frequency Attenuator HF/LF Band Operation Long Lifetime (70 µ s typ.) Very Low Distortion (IP3 @ 455 KHz = < 60 dBm) Description
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UM9552
UM9552
Intermodulat52
MSCO867B
b1443
455 KHz
34943
UM9552S
8 PIN pin diode attenuator
TCVF
455 khz if variable
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2 Wavelength Laser Diode
Abstract: diode 366 nm Toshiba TOLD9225M TOLD9225M 670NM Laser-Diode 7227 RITTAL laser diode toshiba 10mw 670nm
Text: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 PH. 973-579-7227 FAX 973-383-8406 TOSHIBA LASER DIODE TOLD9225M InGaAIP LD ? Lasing Wavelength: ? Optical Output Power: ? Operation Case Temperature: ? = 670nm typ. Po = 10mW (CW) Tc = -10~60?C Pin Connection
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OLD9225M
670nm
2331-S01
2 Wavelength Laser Diode
diode 366 nm
Toshiba TOLD9225M
TOLD9225M
670NM Laser-Diode
7227 RITTAL
laser diode toshiba
10mw 670nm
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ID100
Abstract: MSAFX20N60A
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX20N60A Features • • • • • • • 600 Volts 20 Amps 350 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX20N60A
ID100
MSAFX20N60A
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34036
Abstract: ph c13 diode HUM2010 HUM2015 HUM2020 UM9552 diode mri power
Text: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 HUM2010 HUM2015 HUM2020 Features • • • • • • PIN DIODE HIGH POWER STUD High Power Stud Mount Package High Zero Bias Impedance Very Low Inductance and Capacitance No Internal Lead Straps
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HUM2010
HUM2015
HUM2020
perfUM9552
HUM2010,
34036
ph c13 diode
HUM2010
HUM2015
HUM2020
UM9552
diode mri power
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Untitled
Abstract: No abstract text available
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX20N60A Features • • • • • • • 600 Volts 20 Amps 350 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX20N60A
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EBF83
Abstract: EN50011 Scans-0017839 CD2A battery operated cdi 2235S
Text: PH ILIPS EBF83 DOUBLE-DIODE PENTODE for use as I.F. amplifier, detector and A.G.C. diode in carradio sets. The tube can be directly operated from a 6 V or 12 V storage battery DOUBLE-DIODE PENTHODE pour l'utilisation comme amplificateur MF, comme détecteur et corne diode de C.A.V. dans récepteurs
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EBF83
7R05998
7R05S99
EBF83
EN50011
Scans-0017839
CD2A
battery operated cdi
2235S
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939 diode
Abstract: TRIODE EAC91 CDA 5.5 MC la 4985
Text: PH ILIPS EAC 9 1 DIODE-TRIODE for use as U.H.F. frequency changer DIODE-TRIODE pour utilisation en changeuse de fréquence U.H.F. DIODE-TRIODE zur Verwendung als UKF-MisehrÖhre Heating :indirect by A.C. or D.O. series or parallel supply Chauffage: indirect par C.A. ou C.C.
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max19
939 diode
TRIODE
EAC91
CDA 5.5 MC
la 4985
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CD2A
Abstract: UBC81 h 48 diode DETECTION FUITE 0005pF rs tube
Text: UBC81 PH ILIPS DOUBLE DIODE-TRIODE for A.F. amplification, signal de tection and A.V.C. DOUBLE DIODE-TRIODE pour amplification B.F., la détection de signaux et C.A.V. DOPPELDIODE-TRIODE für NF-Verstärkung, Empfangsgleichriclrtung un d A.L.R. H eating
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UBC81
UBC81
7R0297S
CD2A
h 48 diode
DETECTION FUITE
0005pF
rs tube
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BAS678
Abstract: BAW62 QDE4331 BAW62 SOT23 MBB111 apx 188
Text: • Philips Semiconductors N ^ fc.b53T31 AMER 002432b S3T « A P X PH ILIP S /D IS C R FTF L7T - 1\ Product soecificatmn Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It
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b53T31
002432b
BAS678
10mAtoVâ
bb53T31
QDE4331
BAS678
BAW62
BAW62
BAW62 SOT23
MBB111
apx 188
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BAS86
Abstract: No abstract text available
Text: •I bbS3S3I, GOSMSlfl 4b3 H A P X N AMER PH ILIPS/DISCRETE BAS86 b7E T> SCHOTTKY BARRIER DIODE Schottky Barrier diode with an integrated protection ring against extremely high static discharges. This diode, in a SOD 8 OC envelope, is intended for applications where a very low forward voltage is
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BAS86
10fiA
100i2;
002H320
BAS86
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SUS CIRCUIT breakover device
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL SbE D 711DÖ 5b D D 41D74 3?T • ph : BR216 T -II-2 3 DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the T0-220AB outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a
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41D74
BR216
BR216
T0-220AB
T-ll-23
SUS CIRCUIT breakover device
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BUK637-500B
Abstract: No abstract text available
Text: N APIER PH ILIPS/DISCR ETE bRE D • bbSBTBl 00 3 0 fl 7 D Philips Semiconductors *APX Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode
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BUK637-500B
BUK637-500B
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diode DB 3 C
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5653P ELECTRON DEVICE 1 550 nm O PTICA L FIB ER COM M UN ICATION S InG aA sP PH A SE-SH IFTED D FB-D C-PBH LA SER DIODE M ODULE DESCRIPTION NDL5653P ¡s a 1550 nm phase-shifted DFB Distributed Feed-Back laser diode Butterfly package module with optical isola
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NDL5653P
L5653P
diode DB 3 C
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silicon reference diode
Abstract: Philips diode Cathode indicated by blue band PHILIPS marking diode Cathode indicated by blue band "MARKING CODE P" BA582 Cathode indicated by blue band marking code Cathode is indicated by a blue band marking code
Text: b'JE D • bbSB'ìBl GG2bl73 37T « A P X rn m p s oem iconouciors Product specification _ N AMER PH I L I P S / DI SC RE TE BA582 Silicon planar diode DESCRIPTION The BA582 is a silicon planar high performance band switching diode, intended for low loss band switching
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GG2bl73
BA582
BA582
OD123
15x10x0
002bl7
ODI23.
silicon reference diode
Philips diode
Cathode indicated by blue band
PHILIPS marking
diode Cathode indicated by blue band
"MARKING CODE P"
Cathode indicated by blue band marking code
Cathode is indicated by a blue band marking code
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BAT85
Abstract: BAT85 sot PHILIPS DIODE philips Schottky diode MARKING 12p
Text: SbE D 711DÛ2b □ 0 M G 2 4 ti DTÖ • PH I N Product specification Philips Semiconductors T-i I -or BAT85 Schottky barrier diode P H I LI P S international DESCRIPTION SbE D QUICK REFERENCE DATA A Schottky barrier diode with an integrated protection ring against
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DO-34)
BAT85
711002b
BAT85 sot
PHILIPS DIODE
philips Schottky diode
MARKING 12p
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nec 2502 4 pin
Abstract: UPD75308 T-41-67 PD6120 PH503 photo amplifier application circuit c1339g 1339g Micro Servo
Text: N E C 30E D ELECTRONICS INC b4S7525 G0 a i b 3 1 2 • PHOTO DIODE PH 503 PIN PHOTO DIODE BUILT IN l-V AMPLIFIER DETECTOR FOR CD, OPTICAL DISC MEMORY P A C K A G E D IM E N S IO N S U nit : mm 6.9 ±0.2 P H 503 is 6 elements P IN Photo Diode built in l-V A m p li
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b4S7525
PH503
1339G
PD6353G
PH503
UPD6355G
UPD6353G
SE303A-C
PH302C,
PH310
nec 2502 4 pin
UPD75308
T-41-67
PD6120
photo amplifier application circuit
c1339g
1339g
Micro Servo
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thermistor 054
Abstract: No abstract text available
Text: N EC b2E T> • ELECTRONI CS INC b42752S DQ3fiG5b EDM H N E C E DATA SHEET N EC LASER DIODE MODULE NDL5853P, NDL5853PA ELECTRON DEVICE 1 550 nm O PTICAL FIBER COMMUNICATIONS InGaAsP PH A SE-SH IFTED DFB-DC-PBH LA SER DIODE MODULE FOR 2 .5 Gb/s DESCRIPTIO N
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b42752S
NDL5853P,
NDL5853PA
NDL5853P
NDL5853PA
b427525
NPLS853P,
WPL58S3PÀ
thermistor 054
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Untitled
Abstract: No abstract text available
Text: Microsemi h Watertown, MA 580 Pleasant St. W atertow n, MA 02472 PH: 617 926-0404 FAX: (617) 924-1235 m Progress P ow ered b y Technology Features • • • • PIN DIODE ATTENUATOR Low Frequency Attenuator HF/LF Band Operation Long Lifetime (70 us typ.)
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UM9552
UM9552
MSC0867B
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OP266W
Abstract: OP506W
Text: 0.OPIEK Product Bulletin OP266W June 1996 GaAlAs Plastic Infrared Emitting Diode Type OP266W -Il* * WBBBBSm. iiipllBI8 8 M I pH • FOR IDENTIFICATION PURPOSES. CATHODE LEAD IS .060 (1.52 NOM SHORTER THAN ANODE LEAD. DIMENSIONS ARE IN INCHES (MILLIMETERS)
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OP266W
OP266W
OP506W
OP506W
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BA314
Abstract: IEC134 UBC671 bb53
Text: N AUER PH IL IP S/ DIS CR ETE blE D b b S B ^ l A oosbiso a?i BA314 LOW VOLTAGE STABISTOR Silicon planar epitaxial diode in DO-35 envelope. This diode is intended fo r low voltage stabilizing e.g. bias stabilizer in ciass-B o u tp u t stages, clipping, clamping and meter protection.
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BA314
DO-35
DO-35
OD-27)
DD2bl52
BA314
IEC134
UBC671
bb53
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