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    DIODE PH 6 Search Results

    DIODE PH 6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    DIODE PH 6 Price and Stock

    Phoenix Contact UNO-DIODE/5-24DC/2X10/1X20

    Redundancy module - 5 V - 24 V DC - 2 x 10 A - 1 x 20 A.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com UNO-DIODE/5-24DC/2X10/1X20 36
    • 1 $69.79
    • 10 $63.35
    • 100 $55.99
    • 1000 $55.15
    • 10000 $55.15
    		Buy Now

    Phoenix Contact STEP-DIODE/5-24DC/2X5/1X10

    Redundancy module - 5 ... 24 V DC - 2x 5 A - 1x 10 A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com STEP-DIODE/5-24DC/2X5/1X10 10
    • 1 $71.29
    • 10 $63.15
    • 100 $57.18
    • 1000 $55.25
    • 10000 $55.25
    		Buy Now

    Phoenix Contact QUINT-DIODE/12-24DC/2X20/1

    Diode Redundancy Module - QUINT-DIODE/12-24DC/2X20/1X40
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com QUINT-DIODE/12-24DC/2X20/1 7
    • 1 $178.86
    • 10 $166.93
    • 100 $162.6
    • 1000 $162.6
    • 10000 $162.6
    		Buy Now

    Phoenix Contact TRIO-DIODE/48DC/2X10/1X20

    Redundancy module with function monitoring - 48 V DC - 2x 10 A - 1x 20 A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TRIO-DIODE/48DC/2X10/1X20 5
    • 1 $123.12
    • 10 $111.15
    • 100 $107.85
    • 1000 $106.77
    • 10000 $106.77
    		Buy Now

    Phoenix Contact QUINT-DIODE/48DC/2X20/1X40

    DIN rail diode module 48 V DC/2x20 A or 1x40 A. Uniform redundancy up to the consumer.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com QUINT-DIODE/48DC/2X20/1X40 4
    • 1 $190.8
    • 10 $178.08
    • 100 $173.46
    • 1000 $173.46
    • 10000 $173.46
    		Buy Now
    Find more DIODE PH 6 price and stock on Findchips.com

    DIODE PH 6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PDM5001

    Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
    Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH


    Original     		PDF C3557 PH1503 PH150 PDM5001 PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16

    marking code PH 200

    Abstract: No abstract text available
    Text: BAV70WS SMALL SIGNAL DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PH Top View Marking Code: "PH" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 70 V Average Rectified Forward Current


    Original     		PDF BAV70WS OD-323 OD-323 marking code PH 200

    marking code PH 200

    Abstract: BAV70WS
    Text: BAV70WS SMALL SIGNAL DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PH Top View Marking Code: "PH" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak repetitive reverse voltage VRRM 70 V Average rectified Forward current


    Original     		PDF BAV70WS OD-323 OD-323 marking code PH 200 BAV70WS

    marking code PH 200

    Abstract: No abstract text available
    Text: BAV70WS SMALL SIGNAL DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PH Top View Marking Code: "PH" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 70 V Average Rectified Forward Current


    Original     		PDF BAV70WS OD-323 OD-323 marking code PH 200

    b1443

    Abstract: 455 KHz 34943 UM9552 UM9552S 8 PIN pin diode attenuator TCVF 455 khz if variable
    Text: 580 Pleasant St. Watertown, MA 02472 PH: 617 926-0404 FAX: (617) 924-1235 UM9552 Features • • • • PIN DIODE ATTENUATOR Low Frequency Attenuator HF/LF Band Operation Long Lifetime (70 µ s typ.) Very Low Distortion (IP3 @ 455 KHz = < 60 dBm) Description


    Original     		PDF UM9552 UM9552 Intermodulat52 MSCO867B b1443 455 KHz 34943 UM9552S 8 PIN pin diode attenuator TCVF 455 khz if variable

    2 Wavelength Laser Diode

    Abstract: diode 366 nm Toshiba TOLD9225M TOLD9225M 670NM Laser-Diode 7227 RITTAL laser diode toshiba 10mw 670nm
    Text: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 PH. 973-579-7227 FAX 973-383-8406 TOSHIBA LASER DIODE TOLD9225M InGaAIP LD ? Lasing Wavelength: ? Optical Output Power: ? Operation Case Temperature: ? = 670nm typ. Po = 10mW (CW) Tc = -10~60?C Pin Connection


    Original     		PDF OLD9225M 670nm 2331-S01 2 Wavelength Laser Diode diode 366 nm Toshiba TOLD9225M TOLD9225M 670NM Laser-Diode 7227 RITTAL laser diode toshiba 10mw 670nm

    ID100

    Abstract: MSAFX20N60A
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX20N60A Features • • • • • • • 600 Volts 20 Amps 350 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability


    Original     		PDF MSAFX20N60A ID100 MSAFX20N60A

    34036

    Abstract: ph c13 diode HUM2010 HUM2015 HUM2020 UM9552 diode mri power
    Text: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 HUM2010 HUM2015 HUM2020 Features • • • • • • PIN DIODE HIGH POWER STUD High Power Stud Mount Package High Zero Bias Impedance Very Low Inductance and Capacitance No Internal Lead Straps


    Original     		PDF HUM2010 HUM2015 HUM2020 perfUM9552 HUM2010, 34036 ph c13 diode HUM2010 HUM2015 HUM2020 UM9552 diode mri power

    Untitled

    Abstract: No abstract text available
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX20N60A Features • • • • • • • 600 Volts 20 Amps 350 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability


    Original     		PDF MSAFX20N60A

    EBF83

    Abstract: EN50011 Scans-0017839 CD2A battery operated cdi 2235S
    Text: PH ILIPS EBF83 DOUBLE-DIODE PENTODE for use as I.F. amplifier, detector and A.G.C. diode in carradio sets. The tube can be directly operated from a 6 V or 12 V storage battery DOUBLE-DIODE PENTHODE pour l'utilisation comme amplificateur MF, comme détecteur et corne diode de C.A.V. dans récepteurs


    OCR Scan     		PDF EBF83 7R05998 7R05S99 EBF83 EN50011 Scans-0017839 CD2A battery operated cdi 2235S

    939 diode

    Abstract: TRIODE EAC91 CDA 5.5 MC la 4985
    Text: PH ILIPS EAC 9 1 DIODE-TRIODE for use as U.H.F. frequency changer DIODE-TRIODE pour utilisation en changeuse de fréquence U.H.F. DIODE-TRIODE zur Verwendung als UKF-MisehrÖhre Heating :indirect by A.C. or D.O. series or parallel supply Chauffage: indirect par C.A. ou C.C.


    OCR Scan     		PDF max19 939 diode TRIODE EAC91 CDA 5.5 MC la 4985

    CD2A

    Abstract: UBC81 h 48 diode DETECTION FUITE 0005pF rs tube
    Text: UBC81 PH ILIPS DOUBLE DIODE-TRIODE for A.F. amplification, signal de­ tection and A.V.C. DOUBLE DIODE-TRIODE pour amplification B.F., la détection de signaux et C.A.V. DOPPELDIODE-TRIODE für NF-Verstärkung, Empfangsgleichriclrtung un d A.L.R. H eating


    OCR Scan     		PDF UBC81 UBC81 7R0297S CD2A h 48 diode DETECTION FUITE 0005pF rs tube

    BAS678

    Abstract: BAW62 QDE4331 BAW62 SOT23 MBB111 apx 188
    Text: • Philips Semiconductors N ^ fc.b53T31 AMER 002432b S3T « A P X PH ILIP S /D IS C R FTF L7T - 1\ Product soecificatmn Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It


    OCR Scan     		PDF b53T31 002432b BAS678 10mAtoVâ bb53T31 QDE4331 BAS678 BAW62 BAW62 BAW62 SOT23 MBB111 apx 188

    BAS86

    Abstract: No abstract text available
    Text: •I bbS3S3I, GOSMSlfl 4b3 H A P X N AMER PH ILIPS/DISCRETE BAS86 b7E T> SCHOTTKY BARRIER DIODE Schottky Barrier diode with an integrated protection ring against extremely high static discharges. This diode, in a SOD 8 OC envelope, is intended for applications where a very low forward voltage is


    OCR Scan     		PDF BAS86 10fiA 100i2; 002H320 BAS86

    SUS CIRCUIT breakover device

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL SbE D 711DÖ 5b D D 41D74 3?T • ph : BR216 T -II-2 3 DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the T0-220AB outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a


    OCR Scan     		PDF 41D74 BR216 BR216 T0-220AB T-ll-23 SUS CIRCUIT breakover device

    BUK637-500B

    Abstract: No abstract text available
    Text: N APIER PH ILIPS/DISCR ETE bRE D • bbSBTBl 00 3 0 fl 7 D Philips Semiconductors *APX Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode


    OCR Scan     		PDF BUK637-500B BUK637-500B

    diode DB 3 C

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5653P ELECTRON DEVICE 1 550 nm O PTICA L FIB ER COM M UN ICATION S InG aA sP PH A SE-SH IFTED D FB-D C-PBH LA SER DIODE M ODULE DESCRIPTION NDL5653P ¡s a 1550 nm phase-shifted DFB Distributed Feed-Back laser diode Butterfly package module with optical isola­


    OCR Scan     		PDF NDL5653P L5653P diode DB 3 C

    silicon reference diode

    Abstract: Philips diode Cathode indicated by blue band PHILIPS marking diode Cathode indicated by blue band "MARKING CODE P" BA582 Cathode indicated by blue band marking code Cathode is indicated by a blue band marking code
    Text: b'JE D • bbSB'ìBl GG2bl73 37T « A P X rn m p s oem iconouciors Product specification _ N AMER PH I L I P S / DI SC RE TE BA582 Silicon planar diode DESCRIPTION The BA582 is a silicon planar high performance band switching diode, intended for low loss band switching


    OCR Scan     		PDF GG2bl73 BA582 BA582 OD123 15x10x0 002bl7 ODI23. silicon reference diode Philips diode Cathode indicated by blue band PHILIPS marking diode Cathode indicated by blue band "MARKING CODE P" Cathode indicated by blue band marking code Cathode is indicated by a blue band marking code

    BAT85

    Abstract: BAT85 sot PHILIPS DIODE philips Schottky diode MARKING 12p
    Text: SbE D 711DÛ2b □ 0 M G 2 4 ti DTÖ • PH I N Product specification Philips Semiconductors T-i I -or BAT85 Schottky barrier diode P H I LI P S international DESCRIPTION SbE D QUICK REFERENCE DATA A Schottky barrier diode with an integrated protection ring against


    OCR Scan     		PDF DO-34) BAT85 711002b BAT85 sot PHILIPS DIODE philips Schottky diode MARKING 12p

    nec 2502 4 pin

    Abstract: UPD75308 T-41-67 PD6120 PH503 photo amplifier application circuit c1339g 1339g Micro Servo
    Text: N E C 30E D ELECTRONICS INC b4S7525 G0 a i b 3 1 2 • PHOTO DIODE PH 503 PIN PHOTO DIODE BUILT IN l-V AMPLIFIER DETECTOR FOR CD, OPTICAL DISC MEMORY P A C K A G E D IM E N S IO N S U nit : mm 6.9 ±0.2 P H 503 is 6 elements P IN Photo Diode built in l-V A m p li­


    OCR Scan     		PDF b4S7525 PH503 1339G PD6353G PH503 UPD6355G UPD6353G SE303A-C PH302C, PH310 nec 2502 4 pin UPD75308 T-41-67 PD6120 photo amplifier application circuit c1339g 1339g Micro Servo

    thermistor 054

    Abstract: No abstract text available
    Text: N EC b2E T> • ELECTRONI CS INC b42752S DQ3fiG5b EDM H N E C E DATA SHEET N EC LASER DIODE MODULE NDL5853P, NDL5853PA ELECTRON DEVICE 1 550 nm O PTICAL FIBER COMMUNICATIONS InGaAsP PH A SE-SH IFTED DFB-DC-PBH LA SER DIODE MODULE FOR 2 .5 Gb/s DESCRIPTIO N


    OCR Scan     		PDF b42752S NDL5853P, NDL5853PA NDL5853P NDL5853PA b427525 NPLS853P, WPL58S3PÀ thermistor 054

    Untitled

    Abstract: No abstract text available
    Text: Microsemi h Watertown, MA 580 Pleasant St. W atertow n, MA 02472 PH: 617 926-0404 FAX: (617) 924-1235 m Progress P ow ered b y Technology Features • • • • PIN DIODE ATTENUATOR Low Frequency Attenuator HF/LF Band Operation Long Lifetime (70 us typ.)


    OCR Scan     		PDF UM9552 UM9552 MSC0867B

    OP266W

    Abstract: OP506W
    Text: 0.OPIEK Product Bulletin OP266W June 1996 GaAlAs Plastic Infrared Emitting Diode Type OP266W -Il* * WBBBBSm. iiipllBI8 8 M I pH • FOR IDENTIFICATION PURPOSES. CATHODE LEAD IS .060 (1.52 NOM SHORTER THAN ANODE LEAD. DIMENSIONS ARE IN INCHES (MILLIMETERS)


    OCR Scan     		PDF OP266W OP266W OP506W OP506W

    BA314

    Abstract: IEC134 UBC671 bb53
    Text: N AUER PH IL IP S/ DIS CR ETE blE D b b S B ^ l A oosbiso a?i BA314 LOW VOLTAGE STABISTOR Silicon planar epitaxial diode in DO-35 envelope. This diode is intended fo r low voltage stabilizing e.g. bias stabilizer in ciass-B o u tp u t stages, clipping, clamping and meter protection.


    OCR Scan     		PDF BA314 DO-35 DO-35 OD-27) DD2bl52 BA314 IEC134 UBC671 bb53