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    DOUBLE DATA RATE Search Results

    DOUBLE DATA RATE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    93716BGLF Renesas Electronics Corporation DDR Clock Driver Visit Renesas Electronics Corporation
    93716AFLFT Renesas Electronics Corporation DDR Clock Driver Visit Renesas Electronics Corporation
    93716AGLF Renesas Electronics Corporation DDR Clock Driver Visit Renesas Electronics Corporation
    93716BGLFT Renesas Electronics Corporation DDR Clock Driver Visit Renesas Electronics Corporation
    93716AGLFT Renesas Electronics Corporation DDR Clock Driver Visit Renesas Electronics Corporation

    DOUBLE DATA RATE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ispLever CORE TM Double Data Rate DDR SDRAM Controller (Pipelined Version) User’s Guide June 2004 ipug12_03 Double Data Rate (DDR) SDRAM Controller (Pipelined Version) User’s Guide Lattice Semiconductor Introduction DDR (Double Data Rate) SDRAM was introduced as a replacement for SDRAM memory running at bus speeds


    Original     		PDF ipug12 75MHz. 1-800-LATTICE

    HYB18TC512

    Abstract: HYB18TC512160BF HYB18TC512160BF-3 HYB18TC512160
    Text: September 2006 HYB18TC512160BF HYB18TC512800BF 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.11 Internet Data Sheet HYB18TC512[16/80]0BF 512-Mbit Double-Data-Rate-Two SDRAM HYB18TC512160BF, HYB18TC512800BF


    Original     		PDF HYB18TC512160BF HYB18TC512800BF 512-Mbit HYB18TC512 HYB18TC512160BF, HYB18TC512160BF-2 HYB18TC512800BF-2 HYB18TC512160BF-3, HYB18TC512160BF HYB18TC512160BF-3 HYB18TC512160

    HYB18T512160BF

    Abstract: hyb18t512800bf3s HYB18T512160BF-3.7 HYB18T512800BF-2.5 400B DDR400 HYB18T512400BF HYB18T512800BF HYB18T512400BF-5 HYB18T512400BF-3S
    Text: January 2007 HYB18T512400BF HYB18T512800BF HYB18T512160BF 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet R ev . 1 . 05 Internet Data Sheet HYB18T512xxxBF–[2.5…5] 512-Mbit Double-Data-Rate-Two SDRAM HYB18T512400BF, HYB18T512800BF


    Original     		PDF HYB18T512400BF HYB18T512800BF HYB18T512160BF 512-Mbit HYB18T512xxxBF­ HYB18T512400BF, HYB18T512160BF hyb18t512800bf3s HYB18T512160BF-3.7 HYB18T512800BF-2.5 400B DDR400 HYB18T512400BF HYB18T512800BF HYB18T512400BF-5 HYB18T512400BF-3S

    46LR16200C

    Abstract: Mobile DDR SDRAM 43LR16200C
    Text: IS43LR16200C 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43LR16200C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N


    Original     		PDF IS43LR16200C 16Bits IS43LR16200C IS43LR16200C-6BL 60-ball IS43LR16200C-6BLI -40oC 2Mx16 46LR16200C Mobile DDR SDRAM 43LR16200C

    HYB18TC256160BF

    Abstract: No abstract text available
    Text: February 2007 HYB18T C25616 0 BF 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.21 Internet Data Sheet HYB18TC256160BF 256-Mbit Double-Data-Rate-Two SDRAM HYB18TC256160BF Revision History: 2007-02, Rev. 1.21


    Original     		PDF HYB18T C25616 256-Mbit HYB18TC256160BF

    DDR2-667C

    Abstract: No abstract text available
    Text: December 2006 HYB18T256400BF L HYB18T256800BF(L) HYB18T256160BF(L) 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.0 Internet Data Sheet HYB18T256xx0BF(L)–[25F/…/5] 256-Mbit Double-Data-Rate-Two SDRAM


    Original     		PDF HYB18T256400BF HYB18T256800BF HYB18T256160BF 256-Mbit HYB18T256xx0BF DDR2-667C

    400B

    Abstract: HYB18TC256160AF
    Text: February 2007 HYB18T C25616 0 AF 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.1 Internet Data Sheet HYB18TC256160AF 256-Mbit Double-Data-Rate-Two SDRAM HYB18TC256160AF Revision History: 2007-02, Rev. 1.1


    Original     		PDF HYB18T C25616 256-Mbit HYB18TC256160AF 400B HYB18TC256160AF

    HYB18TC256160AF

    Abstract: 400B
    Text: April 2007 HYB18T C25616 0 AF 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.20 Internet Data Sheet HYB18TC256160AF 256-Mbit Double-Data-Rate-Two SDRAM HYB18TC256160AF Revision History: 2007-04, Rev. 1.20


    Original     		PDF HYB18T C25616 256-Mbit HYB18TC256160AF rev400 HYB18TC256160AF 400B

    Mobile DDR SDRAM

    Abstract: 43LR32100C IS43LR32100C
    Text: IS43LR32100C Advanced Information 512K x 32Bits x 2Banks Mobile DDR SDRAM Description The IS43LR32100C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N


    Original     		PDF IS43LR32100C 32Bits IS43LR32100C 1Mx32 IS43LR32100C-6BL 90-ball IS43LR32100C-6BLI Mobile DDR SDRAM 43LR32100C

    NtRAM

    Abstract: BGA package tray 64
    Text: High Speed SRAM Code Information 1/4 Last Updated : November 2008 K7XXXXXXXX - XXXXXXX 1 2 3 4 5 6 1. Memory (K) 2. Sync SRAM : 7 3. Small Classification A : Sync Pipelined Burst B : Sync Burst D : Double Data Rate I : Double Data Rate II, Common I/O J : Double Data Rate II, Seperate I/O


    Original     		PDF TSOP2-400 NtRAM BGA package tray 64

    IRC5

    Abstract: No abstract text available
    Text: TC59LM913/05AMG-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 8,388,608-WORDS x 4 BANKS × 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 16,777,216-WORDS × 4 BANKS × 8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM913/05AMG is a CMOS Double Data Rate Fast Cycle Random Access Memory DDR-FCRAMTM


    Original     		PDF TC59LM913/05AMG-50 608-WORDS 16-BITS 216-WORDS TC59LM913/05AMG TC59LM913AMG TC59LM905AMG IRC5

    Untitled

    Abstract: No abstract text available
    Text: TC59LM814/06CFT-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDS × 4 BANKS × 8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06CFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR FCRAMTM


    Original     		PDF TC59LM814/06CFT-50 304-WORDS 16-BITS 608-WORDS TC59LM814/06CFT TC59LM814CFT TC59LM806CFT

    Untitled

    Abstract: No abstract text available
    Text: TC59LM913/05AMG-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 8,388,608-WORDS x 4 BANKS × 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 16,777,216-WORDS × 4 BANKS × 8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM913/05AMG is a CMOS Double Data Rate Fast Cycle Random Access Memory DDR -FCRAMTM


    Original     		PDF TC59LM913/05AMG-50 608-WORDS 16-BITS 216-WORDS TC59LM913/05AMG TC59LM913AMG TC59LM905AMG

    46LR16200C

    Abstract: Mobile DDR SDRAM
    Text: IS43/46LR16200C 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43/46LR16200C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N


    Original     		PDF IS43/46LR16200C 16Bits IS43/46LR16200C 2Mx16 IS43LR16200C-6BL 60-ball -40oC IS43LR16200C-6BLI 46LR16200C Mobile DDR SDRAM

    Untitled

    Abstract: No abstract text available
    Text: I S43LR32100C Advanced Information 512K x 32Bits x 2Banks Mobile DDR SDRAM Description The IS43LR32100C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N


    Original     		PDF S43LR32100C 32Bits IS43LR32100C 1Mx32 IS43LR32100C-6BL 90-ball IS43LR32100C-6BLI

    HYB18TC512160BF-3S

    Abstract: HYB18TC512
    Text: September 2007 HYB18T C51280 0 BF HYB18T C51216 0 BF 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.21 Internet Data Sheet HYB18TC512[80/16]0BF 512-Mbit Double-Data-Rate-Two SDRAM HYB18TC512800BF, HYB18TC512160BF


    Original     		PDF HYB18T C51280 C51216 512-Mbit HYB18TC512 HYB18TC512800BF, HYB18TC512160BF HYB18TC512160BF-3S

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary M13S2561616A (2S) DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features  Double-data-rate architecture, two data transfers per clock cycle  Bi-directional data strobe (DQS)  Differential clock inputs (CLK and CLK ) 


    Original     		PDF M13S2561616A

    lm815

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC59LM815/07/03BFT-22,-24,-30 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM 16,777,216-WORDSX4BANKSX4-BITS DOUBLE DATA RATE FAST CYCLE RAM


    OCR Scan     		PDF TC59LM815/07/03 BFT-22 304-WORDSx4BANKSx 16-BITS 608-WORDSX4BANKSX8-BITS 216-WORDS TC59LM815/07/03BFT TC59LM815BFT 304-wordsX4 TC59LM807BFT lm815

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TC59LM814/06/02BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM 16,777,216-WORDSX4BANKSX4-BITS DOUBLE DATA RATE FAST CYCLE RAM


    OCR Scan     		PDF TC59LM814/06/02BFT-22 TC59LM814/06/02BFT TC59LM814BFT 304-words TC59LM806BFT TC59LM802BFT LM814/06/02

    lm814

    Abstract: cyble thelia TC59 A14A9
    Text: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR


    OCR Scan     		PDF LM814/06B FT-22 304-WORDSX4BANKSX16-BITS 608-WORDSX4BANKSX8-BITS TC59LM814/06BFT TC59LM814BFT 304-wordsX TC59LM806BFT lm814 cyble thelia TC59 A14A9

    lm814

    Abstract: ID32-001
    Text: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR


    OCR Scan     		PDF TC59LM814/06BFT-22 TC59LM814/06BFT TC59LM814BFT 304-words TC59LM806BFT LM814/06B FT-22 lm814 ID32-001

    lm814

    Abstract: C1948
    Text: TOSHIBA TENTATIVE TC59LM814/06BFT-22,-24,-30 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR


    OCR Scan     		PDF TC59LM814/06BFT-22 304-WORDSx4BANKSx 16-BITS 608-WORDSX4BANKSX8-BITS TC59LM814/06BFT TC59LM814BFT 304-wordsX4 TC59LM806BFT lm814 C1948

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TC59LM814/06CFT-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06CFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR


    OCR Scan     		PDF TC59LM814/06CFT-50 304-WORDSX4BANKSX 16-BITS 608-WORDSX4BANKSX8-BITS TC59LM814/06CFT TC59LM814CFT 304-wordsX4 TC59LM806CFT

    Untitled

    Abstract: No abstract text available
    Text: TC59LM814/06/02 BFT-22,-24,-30 TOSHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,1 9 4,3 0 4 -W O R D SX 4 BA N K SX 1 6-BITS DOUBLE DATA RATE FAST CYCLE R AM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM 16,777,216-WORDSX4BANKSX4-BITS DOUBLE DATA RATE FAST CYCLE RAM


    OCR Scan     		PDF TC59LM814/06/02 BFT-22 608-WORDSX4BANKSX8-BITS 216-WORDSX4BANKSX4-BITS TC59LM814/06/02BPT TC59LM814BFT 304-wordsX TC59LM806BFT TC59LM802BFT TC59LM814/06/02BFT