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    DQ141 Search Results

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    Amphenol PCD BN002SDQ14124SN

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    DQ141 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DQ111

    Abstract: DQ139 DQ131
    Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply


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    UGSN7004A8HHF-256 2000mil) 256MB 256MB 200pin 128MB 200-Pin DIMM25 DQ120 DQ121 DQ111 DQ139 DQ131 PDF

    BA5 marking

    Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
    Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package


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    HMD4M144D9WG 64Mbyte 4Mx144) 200-pin HMD4M144D9WG 144bit 4Mx16bit 50-pin 16bit BA5 marking DQ112-127 BA7 marking DQ113 BA6 marking BA6137 DQ99 PDF

    DQ141

    Abstract: No abstract text available
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory PRELIMINARY DATA Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


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    M29DW128F 32-Word 16Mbit 48Mbit 16Mbit DQ141 PDF

    J32CG

    Abstract: 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4
    Text: 1 2 4 3 5 6 7 TABLE OF CONTENTS F F PAGE 02 - BLOCK DIAGRAM PAGE 03 - 750GX ADDRESS/DATA BUSSES PAGE 04 - 750GX CONTROLS AND GROUND PAGE 05 - 750GX POWER AND DECOUPLING PAGE 06 - TSI108 PROCESSOR BUS INTERFACE PAGE 07 - TSI108 MEMORY INTERFACE PAGE 08 - DDR2 DIMM CONNECTOR SLOT 0


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    750GX TSI108 RS232 NC7SZ00 J32CG 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4 PDF

    Untitled

    Abstract: No abstract text available
    Text: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8


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    UG08E14488HSG-6 200Pin U08E14488HSG-6 400mil 16bit 240mil 2000mil) PDF

    TOP SIDE MARKING OF MICRON

    Abstract: 48-PIN MT28F004B3 MT28F400B3
    Text: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply Smart 3 FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3):


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    MT28F004B3 MT28F400B3 16KB/8K-word MT28F400B3, 16/512K MT28F400B3 MT28F004B3 TOP SIDE MARKING OF MICRON 48-PIN PDF

    DQ2060

    Abstract: DC1065 EB285 EBSA-285 R164 SA110 B20B20 A59A59 CPU-A13 CPUD22
    Text: A B C D COPYRIGHT C 8 1997 DIGITAL EQUIPMENT CORPORATION 8 16 17 18 19 20 21 sht sht sht sht sht sht 7 CHK CHANGE NO. REV CPU, CPU_, a Block Address X-Bus XBUF_, have PCI +3V Stand - +2V, - - - TAG_,RST_ - - 6 bidirects this 5 is Debug Port their Serial Spare


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    ebsa285 220PF RS232 DQ2060 DC1065 EB285 EBSA-285 R164 SA110 B20B20 A59A59 CPU-A13 CPUD22 PDF

    MT28F004B5

    Abstract: MT28F400B5
    Text: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.18µm Process Technology FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 5 technology (B5):


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    MT28F004B5 MT28F400B5 16KB/8K-word MT28F400B5, 16/512K MT28F004B5 MT28F400B5 PDF

    N6796

    Abstract: No abstract text available
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


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    M29DW128F 32-Word 16Mbit 48Mbit 16Mbit N6796 PDF

    MT28F004B3

    Abstract: MT28F400B3
    Text: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V ONLY, DUAL SUPPLY SMART 3 Features • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3):


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    MT28F004B3 MT28F400B3 16KB/8K-word MT28F400B3, 16/512K MT28F400B3 MT28F004B3 09005aef8114a789 PDF

    MT28F400B5WG-8T

    Abstract: MT28F400B5SG-8TET MT28F004B5VG-8B
    Text: PRELIMINARY‡ 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.18µm Process Technology FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks


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    MT28F004B5 MT28F400B5 16KB/8K-word MT28F400B5, 16/512K MT28F400B5WG-8T MT28F400B5SG-8TET MT28F004B5VG-8B PDF

    MT28F400B5SP

    Abstract: MT28F400B5WP-8 T MT28F400B5SG-8BET MT28F400B5SP8 MT28F400B5WP 44-PIN MT28F004B5 MT28F400B5 MT28F400B5WP-8
    Text: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.18µm Process Technology FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 5 technology (B5):


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    MT28F004B5 MT28F400B5 16KB/8K-word MT28F400B5, 16/512K 600ns 000ns 09005aef8075d1f1 MT28F004B5 MT28F400B5SP MT28F400B5WP-8 T MT28F400B5SG-8BET MT28F400B5SP8 MT28F400B5WP 44-PIN MT28F400B5 MT28F400B5WP-8 PDF

    48-PIN

    Abstract: MT28F004B5 MT28F400B5
    Text: PRELIMINARY‡ 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.18µm Process Technology FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks


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    MT28F004B5 MT28F400B5 16KB/8K-word MT28F400B5, 16/512K MT28F004B5 48-PIN MT28F400B5 PDF

    48-PIN

    Abstract: MT28F004B3 MT28F400B3
    Text: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply Smart 3 FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3):


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    MT28F004B3 MT28F400B3 16KB/8K-word MT28F400B3, 16/512K MT28F400B3 MT28F004B3 48-PIN PDF

    09005aef8114a789

    Abstract: MT28F004B3 MT28F400B3
    Text: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V ONLY, DUAL SUPPLY SMART 3 Features • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3):


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    MT28F004B3 MT28F400B3 16KB/8K-word MT28F400B3, 16/512K MT28F400B3 MT28F004B3 09005aef8114a789 09005aef8114a789 PDF

    MT28F004B5

    Abstract: MT28F400B5 Micron 4Mb NOR FLASH MT28F400B5SG-8B
    Text: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.3µm Process Technology FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks


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    MT28F004B5 MT28F400B5 40-Pin 48-Pin 16KB/8K-word MT28F400B5, 16/512K MT28F004B5 MT28F400B5 Micron 4Mb NOR FLASH MT28F400B5SG-8B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W29L102 64K X 16 CMOS FLASH MEMORY G ENERAL DESCRIPTION The W29L102 is a 1-megabit, 3.3-volt only CMOS tlash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt Vpp is


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    W29L102 W29L102 12-volt 77nCSf; 8fjg-8-i57S5fjft8 SS2-275131QS PDF

    Untitled

    Abstract: No abstract text available
    Text: PIC14000 M ic r o c h ip 28-Pin Programmable Mixed Signal Controller PACKAGE TYPES FEATURES High-Performance RISC-like CPU core PDIP, SOIC, SSOP, Windowed CERDIP • Based on PIC16C74 microcontroller • Only 35 single word instructions to learn • All single cycle instructions except for program


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    PIC14000 28-Pin PIC16C74 blD3501 012bSl DS00049F-page PDF

    BQ37

    Abstract: 1JB41
    Text: INTEGRATE] DEVICE t>ÖE ]> • 4A2S771 0014CH? 0 T3 ■ IDT7024S/L HIGH-SPEED 4 K x 16 DUAL-PORT STATIC RAM In te g ra te d D e v ic e T e c h n o lo g y , Inc. FEATURES: more than one device • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave


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    4A2S771 0014CH? IDT7024S/L 35/45/55/70ns 25/35/45/55ns IDT7024S 750mW IDT7024L IDT7024 BQ37 1JB41 PDF

    D2119

    Abstract: MB84VD2118XA 0A0000H
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM M B 8 4 V D 2 1 18XA -35/M B84VD 2119XA-85 FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance


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    8/x16) MB84VD2118XA-35/MB84VD2119XA-85 69-ball 56-pin D2119 MB84VD2118XA 0A0000H PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 4 3 2 126/8 _ 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5432126/8 is a new generation G raphic D R A M organized in 131,072-word x 32-bit configuration. The technology used to fabricate the MSM5432126/8 is O K I's C M O S silicon gate


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    072-Word 32-Bit MSM5432126/8 32-bit MSM5432128 64-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: f T DG133/134/141 Dual SPST JFET Analog Swiches FEATURES BENEFITS APPLICATIONS • Low Standby Power < 1 p.W • Minimizes Standby Power Requirement • Portable and Battery Powered Systems • Bipolar Drivers • Better Radiation Tolerance • Constant rQS(ON)


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    DG133/134/141 DG133, DG134, DQ141 DG133/134/141 PDF

    D141G

    Abstract: lt 7246 panel-meter toshiba logic tc5053p
    Text: T O S H IB A 9097248 TOSHIBA -CLO G IC/nEH O R Y} L O G IC /M E M O R Y C 2M O S Ï>Ë| Í G T 7 5 4 0 □ □ lM Q 'i? 7 imÍiiÍininiiiiiihiiiiiiiin DIGITAL SILICON TC5053P TC5054P ÖS INTEGRATED TC5053P, CIRCUIT y P MONOLITHIC T U C n D C U i l D 4


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    TC5053P, TC5053P TC5054P TC5053P/TC5054P DQ141D3 D141G lt 7246 panel-meter toshiba logic PDF

    MB84VD2108X

    Abstract: MB84VD2109X 2SA261 d2109x MCP MEMORY
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/x16) FLASH MEMORY & 2M (x 8/x16) STATIC RAM MB84VD2108X-35/MB84VD2109X-85 FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 85 ns maximum access time


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    8/x16) MB84VD2108X-35/MB84VD2109X-85 61-ball 56-pin MB84VD2108X MB84VD2109X 2SA261 d2109x MCP MEMORY PDF