DQ111
Abstract: DQ139 DQ131
Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply
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UGSN7004A8HHF-256
2000mil)
256MB
256MB
200pin
128MB
200-Pin
DIMM25
DQ120
DQ121
DQ111
DQ139
DQ131
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BA5 marking
Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package
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HMD4M144D9WG
64Mbyte
4Mx144)
200-pin
HMD4M144D9WG
144bit
4Mx16bit
50-pin
16bit
BA5 marking
DQ112-127
BA7 marking
DQ113
BA6 marking
BA6137
DQ99
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DQ141
Abstract: No abstract text available
Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory PRELIMINARY DATA Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)
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M29DW128F
32-Word
16Mbit
48Mbit
16Mbit
DQ141
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J32CG
Abstract: 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4
Text: 1 2 4 3 5 6 7 TABLE OF CONTENTS F F PAGE 02 - BLOCK DIAGRAM PAGE 03 - 750GX ADDRESS/DATA BUSSES PAGE 04 - 750GX CONTROLS AND GROUND PAGE 05 - 750GX POWER AND DECOUPLING PAGE 06 - TSI108 PROCESSOR BUS INTERFACE PAGE 07 - TSI108 MEMORY INTERFACE PAGE 08 - DDR2 DIMM CONNECTOR SLOT 0
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750GX
TSI108
RS232
NC7SZ00
J32CG
61a3 mosfet
BCM5461KFB
61a3
58A6
bcm5461
60F10
L32SD
DQ27152
A26B4
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Untitled
Abstract: No abstract text available
Text: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8
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UG08E14488HSG-6
200Pin
U08E14488HSG-6
400mil
16bit
240mil
2000mil)
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TOP SIDE MARKING OF MICRON
Abstract: 48-PIN MT28F004B3 MT28F400B3
Text: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply Smart 3 FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3):
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MT28F004B3
MT28F400B3
16KB/8K-word
MT28F400B3,
16/512K
MT28F400B3
MT28F004B3
TOP SIDE MARKING OF MICRON
48-PIN
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DQ2060
Abstract: DC1065 EB285 EBSA-285 R164 SA110 B20B20 A59A59 CPU-A13 CPUD22
Text: A B C D COPYRIGHT C 8 1997 DIGITAL EQUIPMENT CORPORATION 8 16 17 18 19 20 21 sht sht sht sht sht sht 7 CHK CHANGE NO. REV CPU, CPU_, a Block Address X-Bus XBUF_, have PCI +3V Stand - +2V, - - - TAG_,RST_ - - 6 bidirects this 5 is Debug Port their Serial Spare
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ebsa285
220PF
RS232
DQ2060
DC1065
EB285
EBSA-285
R164
SA110
B20B20
A59A59
CPU-A13
CPUD22
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MT28F004B5
Abstract: MT28F400B5
Text: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.18µm Process Technology FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 5 technology (B5):
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MT28F004B5
MT28F400B5
16KB/8K-word
MT28F400B5,
16/512K
MT28F004B5
MT28F400B5
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N6796
Abstract: No abstract text available
Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)
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M29DW128F
32-Word
16Mbit
48Mbit
16Mbit
N6796
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MT28F004B3
Abstract: MT28F400B3
Text: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V ONLY, DUAL SUPPLY SMART 3 Features • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3):
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MT28F004B3
MT28F400B3
16KB/8K-word
MT28F400B3,
16/512K
MT28F400B3
MT28F004B3
09005aef8114a789
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MT28F400B5WG-8T
Abstract: MT28F400B5SG-8TET MT28F004B5VG-8B
Text: PRELIMINARY‡ 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.18µm Process Technology FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks
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MT28F004B5
MT28F400B5
16KB/8K-word
MT28F400B5,
16/512K
MT28F400B5WG-8T
MT28F400B5SG-8TET
MT28F004B5VG-8B
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MT28F400B5SP
Abstract: MT28F400B5WP-8 T MT28F400B5SG-8BET MT28F400B5SP8 MT28F400B5WP 44-PIN MT28F004B5 MT28F400B5 MT28F400B5WP-8
Text: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.18µm Process Technology FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 5 technology (B5):
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MT28F004B5
MT28F400B5
16KB/8K-word
MT28F400B5,
16/512K
600ns
000ns
09005aef8075d1f1
MT28F004B5
MT28F400B5SP
MT28F400B5WP-8 T
MT28F400B5SG-8BET
MT28F400B5SP8
MT28F400B5WP
44-PIN
MT28F400B5
MT28F400B5WP-8
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48-PIN
Abstract: MT28F004B5 MT28F400B5
Text: PRELIMINARY‡ 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.18µm Process Technology FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks
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MT28F004B5
MT28F400B5
16KB/8K-word
MT28F400B5,
16/512K
MT28F004B5
48-PIN
MT28F400B5
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48-PIN
Abstract: MT28F004B3 MT28F400B3
Text: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply Smart 3 FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3):
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MT28F004B3
MT28F400B3
16KB/8K-word
MT28F400B3,
16/512K
MT28F400B3
MT28F004B3
48-PIN
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09005aef8114a789
Abstract: MT28F004B3 MT28F400B3
Text: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V ONLY, DUAL SUPPLY SMART 3 Features • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3):
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MT28F004B3
MT28F400B3
16KB/8K-word
MT28F400B3,
16/512K
MT28F400B3
MT28F004B3
09005aef8114a789
09005aef8114a789
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MT28F004B5
Abstract: MT28F400B5 Micron 4Mb NOR FLASH MT28F400B5SG-8B
Text: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.3µm Process Technology FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks
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MT28F004B5
MT28F400B5
40-Pin
48-Pin
16KB/8K-word
MT28F400B5,
16/512K
MT28F004B5
MT28F400B5
Micron 4Mb NOR FLASH
MT28F400B5SG-8B
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Untitled
Abstract: No abstract text available
Text: Preliminary W29L102 64K X 16 CMOS FLASH MEMORY G ENERAL DESCRIPTION The W29L102 is a 1-megabit, 3.3-volt only CMOS tlash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt Vpp is
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W29L102
W29L102
12-volt
77nCSf;
8fjg-8-i57S5fjft8
SS2-275131QS
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Untitled
Abstract: No abstract text available
Text: PIC14000 M ic r o c h ip 28-Pin Programmable Mixed Signal Controller PACKAGE TYPES FEATURES High-Performance RISC-like CPU core PDIP, SOIC, SSOP, Windowed CERDIP • Based on PIC16C74 microcontroller • Only 35 single word instructions to learn • All single cycle instructions except for program
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PIC14000
28-Pin
PIC16C74
blD3501
012bSl
DS00049F-page
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BQ37
Abstract: 1JB41
Text: INTEGRATE] DEVICE t>ÖE ]> • 4A2S771 0014CH? 0 T3 ■ IDT7024S/L HIGH-SPEED 4 K x 16 DUAL-PORT STATIC RAM In te g ra te d D e v ic e T e c h n o lo g y , Inc. FEATURES: more than one device • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave
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4A2S771
0014CH?
IDT7024S/L
35/45/55/70ns
25/35/45/55ns
IDT7024S
750mW
IDT7024L
IDT7024
BQ37
1JB41
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D2119
Abstract: MB84VD2118XA 0A0000H
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM M B 8 4 V D 2 1 18XA -35/M B84VD 2119XA-85 FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance
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8/x16)
MB84VD2118XA-35/MB84VD2119XA-85
69-ball
56-pin
D2119
MB84VD2118XA
0A0000H
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 4 3 2 126/8 _ 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5432126/8 is a new generation G raphic D R A M organized in 131,072-word x 32-bit configuration. The technology used to fabricate the MSM5432126/8 is O K I's C M O S silicon gate
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072-Word
32-Bit
MSM5432126/8
32-bit
MSM5432128
64-Pin
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Untitled
Abstract: No abstract text available
Text: f T DG133/134/141 Dual SPST JFET Analog Swiches FEATURES BENEFITS APPLICATIONS • Low Standby Power < 1 p.W • Minimizes Standby Power Requirement • Portable and Battery Powered Systems • Bipolar Drivers • Better Radiation Tolerance • Constant rQS(ON)
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DG133/134/141
DG133,
DG134,
DQ141
DG133/134/141
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D141G
Abstract: lt 7246 panel-meter toshiba logic tc5053p
Text: T O S H IB A 9097248 TOSHIBA -CLO G IC/nEH O R Y} L O G IC /M E M O R Y C 2M O S Ï>Ë| Í G T 7 5 4 0 □ □ lM Q 'i? 7 imÍiiÍininiiiiiihiiiiiiiin DIGITAL SILICON TC5053P TC5054P ÖS INTEGRATED TC5053P, CIRCUIT y P MONOLITHIC T U C n D C U i l D 4
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TC5053P,
TC5053P
TC5054P
TC5053P/TC5054P
DQ141D3
D141G
lt 7246
panel-meter
toshiba logic
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MB84VD2108X
Abstract: MB84VD2109X 2SA261 d2109x MCP MEMORY
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/x16) FLASH MEMORY & 2M (x 8/x16) STATIC RAM MB84VD2108X-35/MB84VD2109X-85 FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 85 ns maximum access time
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8/x16)
MB84VD2108X-35/MB84VD2109X-85
61-ball
56-pin
MB84VD2108X
MB84VD2109X
2SA261
d2109x
MCP MEMORY
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