semikron SKFT 150
Abstract: Semipack 1 skfh skfh semikron thyristor Semipack skfh semikron
Text: VDRM VRRM tq Tvj = 125 °C ITRMS (maximum values for continuous operation) 350 A V µs 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 DS 1) ITAV (sin. 180; Tcase = 76 °C; 50 Hz) 150 A SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3 Fast Thyristor/ Diode
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2CSC400002D0903
Abstract: 2CSG210200R1211 ABB E 257 C30-230 S465502 2CSG035100R1211 2CSG210100R1211 ABB SACE sn 125 EA1733 LCD TV SCHEMA S550284
Text: Catalogo tecnico System pro M compact System pro M Interruttori magnetotermici, differenziali e apparecchi modulari per impianti in bassa tensione System pro M compact® - System pro M Per tener conto dell’evoluzione delle Norme e dei materiali, le caratteristiche e le dimensioni di ingombro indicate nel presente
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2CSC400002D0903
2CSG210200R1211
ABB E 257 C30-230
S465502
2CSG035100R1211
2CSG210100R1211
ABB SACE sn 125
EA1733
LCD TV SCHEMA
S550284
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WMV smd transistor
Abstract: smd mk
Text: f.con ISO 14001 Alphanumerical product list art. no. page art. no. page art. no. page art. no. page 1706 . G 1831 . ASL . SMD . ASL . SMD . B SM ASLA . ASLG . BADM . BADP . BK 01 32 BL 1 . BL 10 . BL 11 . BL 12 . BL 13 . BL 14 .
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Industrial Drives
Abstract: Embedded Drives 10-R106PPA020SB01-M934A-D2-14 vinco igbt 10-R106PPA020SB01-M934A
Text: 10-R106PPA020SB01-M934A datasheet flow 90PIM 1 + PFC 600 V / 20 A Features flow 90 housing ● Clip in PCB mounting ● Trench Fieldstop IGBT's for low saturation losses ● Latest generation superjunction MOSFET for PFC Schematic Target applications ● Industrial Drives
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10-R106PPA020SB01-M934A
90PIM
Industrial Drives
Embedded Drives
10-R106PPA020SB01-M934A-D2-14
vinco igbt
10-R106PPA020SB01-M934A
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Untitled
Abstract: No abstract text available
Text: 2SK1663-L,S N-channel MOS-FET F-I Series 800V > Features - 4Ω 3A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage > Applications - Switching Regulators UPS DC-DC Converters General Purpose Power Amplifier
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2SK1663-L
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NA34
Abstract: 2SK1663-L
Text: 2SK1663-L,S N-channel MOS-FET F-I Series 800V > Features - 4Ω 3A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage > Applications - Switching Regulators UPS DC-DC Converters General Purpose Power Amplifier
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2SK1663-L
NA34
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2SK2294
Abstract: 481J1
Text: Transistors Switching 800V, 3A 2SK2294 •F e a tu re s ^External dim ensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G ate-so urce v o lta g e g u ara ntee d at V gss = ± 3 0 V . 5 ) Easi ly designed d rive circu its.
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2SK2294
O-22QFN
2SK2294
481J1
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pj 989
Abstract: No abstract text available
Text: 47E J> m S23SbOS 0Q243GS S • S I E G 1^31-35 Silicon N Channel MOSFET Tetrode BF 989 _ SIEMENS AKTIENGESELLSCHAF • • _ For amplifier and mixer stages in UHF and VHF TV tuners Low input and output capacitance Type Marking Ordering code
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S23SbOS
0Q243GS
Q62702-F874
Q62702-F969
fi23Sb05
BF989
pj 989
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801R4BN
Abstract: 801R2BN APT801R2BN
Text: o ADVANCED POW ER Te c h n o l o g y D Ô S POWER MOS IV® APT801R2BN APT751R2BN APT801R4BN APT751R4BN 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20Q 1.20Q 1.40Q 1.40Í2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T „ = 25°C unless otherwise specified.
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APT801R2BN
APT751R2BN
APT801R4BN
APT751R4BN
801R2BN
751R4BN
751R2BN
801R4BN
APT801R2/751R2/801R4/751R4BN
801R4BN
APT801R2BN
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siemens Pm 90 87
Abstract: PC 3131
Text: S IE M E N S CLX34 HiRelX-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 10 GHz • Hermetically sealed microwave power package • Low thermal resistance for
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CLX34
CLX34-00
CLX34-05
CLX34-10
MWP-25
CLX34-nn:
QS9000
siemens Pm 90 87
PC 3131
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SJ 76 A DIODE
Abstract: No abstract text available
Text: A D VA NC E D POWER TECHNOLOGY 4SE D • 0 557^01 O OD OS ' l b 3 GS *A V P ad va n ced ^■1 T F -P a c k C F > W ä j P O W E r n R > ? : _ ech n o lo g y APT8030CFN 800V 29.0A 0.30, P APT7530CFN 750V 29.0A 0.30 i2 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEJS
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APT8030CFN
APT7530CFN
MIL-STD-750
SJ 76 A DIODE
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Untitled
Abstract: No abstract text available
Text: 15E D I SEMI KRÖN INC Û l3 b b ? l 00Û15Q3 T se MIKRD n { Vdrm Vrrm It r m s tq L -z > - c ~ * t> _ maximum values for continuous operation 350 A 350 A (Tvj = 125 °C) - Ita v (sin. 180;Tcase = 76 °C; 50 Hz) V US 150 A 150 A 800
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SKFT150
5Nm/44lb
9Nm/80lb
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Untitled
Abstract: No abstract text available
Text: sem ik r o n Absolute Maximum Ratings Sym bol V ds V dgr Id Idm Vgs Pd Tj, Tslg Vtsol humidity climate C onditions ' Rgs = 20 kQ AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 800 800 36 144 + 20 700 - 55 . . .+150 2 500 Class F 55/150/56 V V A A V W CC
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BF993
Abstract: Silicon N Channel MOSFET Tetrode
Text: Silicon N Channel MOSFET Tetrode • • BF 993 High gain, low distortion For VHF TV and FM mixer and input stages Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape Package BF 993 ME Q62702-F899 Q62702-F1018 SOT 143 Maximum ratings
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Q62702-F899
Q62702-F1018
100MHz
BF993
Silicon N Channel MOSFET Tetrode
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Untitled
Abstract: No abstract text available
Text: S IE M E N S CLX32 HiRelX-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for
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CLX32
CLX32-00
CLX32-05
CLX32-10
MWP-25
CLX32-nn:
QS9000
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C67078-A1609-A3
Abstract: 0014fl3b kds 9a
Text: ÔÛD D • 88D fl23SbQS QQ14Ô34 1 m Z I E G 14 834 D BUZ 88 A SIEMENS AKTIEN6ESELLSCHAF _ Main ratings N-Channel = 800 V Draln-source voltage Vos » 5A Continuous drain current ¡0 Drain-source on-reslstance ^DS on = 1,5 £2 Description
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fl23sbqs
C67078-A1609-A3
C67078-A1609-A3
0014fl3b
kds 9a
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BF996
Abstract: 393bf BF996S
Text: Silicon N Channel MOSFET Tetrode • • • BF 996 S For input stages in UHF TV tuners High transconductance Low noise figure Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package B F 996 S MH Q62702-F964 Q62702-F1021
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Q62702-F964
Q62702-F1021
BF996
393bf
BF996S
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802R4BN
Abstract: 752r 802R4 APT752R4BN APT752R8BN APT802R4BN APT802R8BN
Text: A D V A N C ED PO W ER Te c h n o l o g y O D APT802R4BN APT752R4BN APT802R8BN APT752R8BN O S POWER MOS IVe 800V 750V 800V 750V 5.5A 5.5A 5.0A 5.0A 2.40Q 2.40Q 2.80Q 2.80Í2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 25°C unless otherwise specified.
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APT802R4BN
APT752R4BN
APT802R8BN
APT752R8BN
752R4BN
802R4BN
752R8BN
802R8BN
O-247AD
752r
802R4
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SKM 181 c
Abstract: No abstract text available
Text: s EMIKRDN Absolute Maximum Ratings Sym bol V ds V dgr Id Idm V gs Pd Tj, Tstg Visol h u m id ity c lim a te Values Units 800 800 36 144 ±20 700 - 5 5 . . .+150 2 50 0 C lass F 5 5 /1 5 0 /5 6 V V A A V W °c V 36 144 A A Conditions ' R gs = 20 kQ A C , 1 m in, 2 0 0 |iA
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buz 90 af
Abstract: No abstract text available
Text: ÖÖD D • 88D fl23SbQS 0014034 1 ■ S I E ß 14834 D T ’' ?>Ct '~ ! 3 BUZ 88 A SIEMENS AKTIEN6ESELLSCHAF _ Main ratings N-Channel = 800 V Draln-source voltage KlS » 5A Continuous drain current 1D Drain-source on-resistance ^DS on = 1,5 £2
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fl23SbQS
C67078-A1609-A3
buz 90 af
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Untitled
Abstract: No abstract text available
Text: f - Silicon N Channel M O SFET Tetrode 3SE D • 31 BF 989 &53b35Q OOlbTfl? 1 ■ S I P SIEMENS/ S P CL i SEMICONDS For amplifier and mixer stages in UHF and VHF TV tuners Low Input and output capacitance Type Marking Ordering code for versions In bulk Ordering code for
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53b35Q
Q62702-F874
Q62702-F969
23b320
BP989
200MHz;
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Untitled
Abstract: No abstract text available
Text: T - 3 I- 0 .3 T Silicon N Channel MOSFET Tetrode 32E D • fl23b320 OQLbflL? b BF 996 S I S IP SIEMENS/ SPCL-, SEMICONDS • • • For input stages in UHF TV tuners High transconductance Low noise figure Type Marking Ordering code for versions in bulk BF 996 S
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fl23b320
Q62702-F964
Q62702-F1021
23b320
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Untitled
Abstract: No abstract text available
Text: s e M IKRO n Absolute Maximum Ratings Sym bol V ds V dgr Id Idm V gs Conditions ' Rgs = 20 kQ Visol humidity climate Units 800 V 800 V 36 144 A A ±20 V 700 W - 5 5 . . .+150 °C 2 500 V Pd Tj, Tstg Values A C , 1 min DIN 40 040 DIN IEC 68 T.1 55/150/56 A
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fll3bb71
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tiristor
Abstract: tiristores skt 45 SKT350 SKT110F06DT SKT70F tiristori skt45f06ds skt 430 f SKT513F
Text: Fast Thyristors Schnelle Thyristoren Thyristors rapides VT max. Or V VT ro) rT V mfi R :€ 1 0 S :S 1 5 T :ë 2 0 2,65 (50 A) 1,8 16 3 150 500 R :ë 1 0 S :ë 1 5 T :ë 2 0 U :S 2 5 2,05 (50 A) 1,4 12 3 150 200 500 S :ë 1 5 T :€ 2 0 U :ë 2 5 3,65 (300 A)
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12F06DR,
F08DS
F10DS
F12DS
16F06DR
45F06DS
F08DS,
F12DT
tiristor
tiristores
skt 45
SKT350
SKT110F06DT
SKT70F
tiristori
skt45f06ds
skt 430 f
SKT513F
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