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    Dwyer Instruments Inc DS-300-3

    In Line Flow Sensor, 200Psi, 1/4"mnpt; Flow Rate Min:-; Flow Rate Max:-; Supply Voltage Min:-; Supply Voltage Max:-; Accuracy:-; Product Range:Ds Series; Port Size:0.25"; Pressure Max:200Psi Rohs Compliant: Yes |Dwyer DS-300-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark DS-300-3 Bulk 4 1
    • 1 $254.12
    • 10 $254.12
    • 100 $254.12
    • 1000 $254.12
    • 10000 $254.12
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    RS DS-300-3 Bulk 1
    • 1 $332.3
    • 10 $309.04
    • 100 $309.04
    • 1000 $309.04
    • 10000 $309.04
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    Bisco Industries DS-300-3 2
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    Dwyer Instruments Inc DS-300-3-LV

    In Line Flow Sensor, 200Psi, 1/4" Mnpt; Flow Rate Min:-; Flow Rate Max:-; Supply Voltage Min:-; Supply Voltage Max:-; Accuracy:-; Product Range:Ds Series; Port Size:0.25"; Pressure Max:200Psi Rohs Compliant: Yes |Dwyer DS-300-3-LV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark DS-300-3-LV Bulk 1
    • 1 $332.3
    • 10 $299.07
    • 100 $299.07
    • 1000 $299.07
    • 10000 $299.07
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    RS DS-300-3-LV Bulk 1
    • 1 $332.55
    • 10 $319.08
    • 100 $319.08
    • 1000 $319.08
    • 10000 $319.08
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    DS3003 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tab1043

    Abstract: 1096p
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3003 - 3.0 VP1058 8-BIT, 25MHz, VIDEO FLASH ADC SINGLE + 5V SUPPLY The VP1058 is a low power analog-to-digital flash converter which requires no preceding sample and hold


    Original     		PDF DS3003 VP1058 25MHz, VP1058 tab1043 1096p

    ultrasonic water level sensor

    Abstract: ultrasonic level transmitter LM90100 ultrasonic range cm level LM90-1001 water level controller with lcd display
    Text: EchoSpan DS300350-REV:A TM Ultrasonic Level Transmitter Specifications Rear View Shown LU81: 8" to 16.4' 20 cm to 5m LU83: 8" to 26.2' (20 cm to 8m) LU84: 12" to 32.8' (30 cm to 10m) ± 0.2% of span in air Accuracy: LU81/83: 0.039" (1 mm) Resolution: LU84: 0.078" (2 mm)


    Original     		PDF DS300350-REV LU81/83: LM90-1001 ultrasonic water level sensor ultrasonic level transmitter LM90100 ultrasonic range cm level water level controller with lcd display

    tab1043

    Abstract: tab1043 replacement 1N4148 2N2222 AD842 DG28 REF12Z VP1058
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3003 - 3.0 VP1058 8-BIT, 25MHz, VIDEO FLASH ADC SINGLE + 5V SUPPLY The VP1058 is a low power analog-to-digital flash converter which requires no preceding sample and hold


    Original     		PDF DS3003 VP1058 25MHz, VP1058 tab1043 tab1043 replacement 1N4148 2N2222 AD842 DG28 REF12Z

    DIRECT Replacement with Analog Devices

    Abstract: No abstract text available
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3003 - 3.0 VP1058 8-BIT, 25MHz, VIDEO FLASH ADC SINGLE + 5V SUPPLY The VP1058 is a low power analog-to-digital flash converter which requires no preceding sample and hold


    Original     		PDF DS3003 VP1058 25MHz, VP1058 DIRECT Replacement with Analog Devices

    K2X pnp

    Abstract: K2X TO J-STD-020A MMBT4401 MMBT4401-7 MMBT4403
    Text: MMBT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT4401 Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4403 Ideal for Medium Power Amplification and Switching SOT-23 A C Mechanical Data · · ·


    Original     		PDF MMBT4401 MMBT4403) OT-23 OT-23, J-STD-020A MIL-STD-202, MBT4401 DS30039 K2X pnp K2X TO J-STD-020A MMBT4401 MMBT4401-7 MMBT4403

    RM3182A

    Abstract: RM3182AL RM3182AS
    Text: Electronics Semiconductor Division RM3182A ARINC 429 Differential Line Driver Features Description • • • • • • • • • • The RM3182A is a complete differential line driver IC. When Data A = Data B or Sync or Clock Signal is low, the driver forces the output to a Voltage Null level


    Original     		PDF RM3182A RM3182A DS3003182A RM3182AL RM3182AS

    Untitled

    Abstract: No abstract text available
    Text: BYT40Y 1.0A HIGH VOLTAGE GLASS BODY RECTIFIER POWER SEMICONDUCTOR Features • • • Hermetically Sealed Glass Body Construction High Voltage to 1600V with Low Leakage Surge Overload Rating to 25A Peak A A B C Mechanical Data • • • • • D Case: DOT-30B, Glass


    Original     		PDF BYT40Y DOT-30B, MIL-STD-202, DOT-30B DS30032

    DS1304

    Abstract: aem r10k SMP3316-103M ds1303 renco 4r7 SMTDR54-120M smtdr75 SMTDR75-680K SMTDR75-221K MLF1608A1R0KT
    Text: Bourns P/N CI100505-1N0D CI100505-1N2D CI100505-1N5D CI100505-1N8D CI100505-2N2D CI100505-2N7D CI100505-3N3D CI100505-3N9D CI100505-4N7D CI100505-5N6D CI100505-6N8J CI100505-8N2J CI100505-10NJ CI100505-12NJ CI100505-15NJ CI100505-18NJ CI100505-22NJ CI100505-27NJ


    Original     		PDF CI100505-1N0D CI100505-1N2D CI100505-1N5D CI100505-1N8D CI100505-2N2D CI100505-2N7D CI100505-3N3D CI100505-3N9D CI100505-4N7D CI100505-5N6D DS1304 aem r10k SMP3316-103M ds1303 renco 4r7 SMTDR54-120M smtdr75 SMTDR75-680K SMTDR75-221K MLF1608A1R0KT

    DS30030

    Abstract: 4b42
    Text: MBR830 - MBR860 8.0A SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward


    Original     		PDF MBR830 MBR860 O-220AC MBR845 MBR850 DS30030 MBR830-MBR860 4b42

    202 sod57

    Abstract: DS30034 NI 4001
    Text: SF4001 - SF4007 1.0A ULTRA-FAST RECOVERY GLASS BODY RECTIFIER POWER SEMICONDUCTOR Features • • • • Hermetically Sealed Glass Body Construction Fast Switching for High Efficiency Surge Overload Rating to 30A Peak Low Reverse Leakage Current A A B C


    Original     		PDF SF4001 SF4007 OD-57, MIL-STD-202, OD-57 DS30034 202 sod57 NI 4001

    QED22X

    Abstract: QED221 QED222 QED223
    Text: PLASTIC INFRARED LIGHT EMITTING DIODE QED221 QED222 QED223 PACKAGE DIMENSIONS 0.195 4.95 REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN 0.050 (1.25) CATHODE 0.100 (2.54) NOM SCHEMATIC 0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X) ANODE


    Original     		PDF QED221 QED222 QED223 QED22X 880nm QSD122/123/124 DS300337 QED221 QED222 QED223

    400w power amplifier circuit diagram

    Abstract: RM3182A RM3182AL RM3182AS
    Text: www.fairchildsemi.com RM3182A ARINC 429 Differential Line Driver Features Description • • • • • • • • • • The RM3182A is a complete differential line driver IC. When Data A = Data B or Sync or Clock Signal is low, the driver forces the output to a Voltage Null level


    Original     		PDF RM3182A RM3182A DS3003182A 400w power amplifier circuit diagram RM3182AL RM3182AS

    Infrared Phototransistor

    Abstract: QSB363 QEB363 QEB373
    Text: SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSB363 PACKAGE DIMENSIONS EMITTER 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .059 (1.5) .051 (1.3) .118 (3.0) .102 (2.6) 0.055 (1.4) 0.008 (0.21)


    Original     		PDF QSB363 QSB363 DS300357 Infrared Phototransistor QEB363 QEB373

    L14C2

    Abstract: L14C1
    Text: HERMETIC SILICON PHOTOTRANSISTOR L14C1 L14C2 PACKAGE DIMENSIONS 0.230 5.84 0.209 (5.31) 0.195 (4.96) 0.178 (4.52) 0.030 (0.76) MAX 0.210 (5.34) MAX 0.500 (12.7) MIN 0.100 (2.54) SCHEMATIC 0.050 (1.27) 0.100 (2.54) DIA. (CONNECTED TO CASE) COLLECTOR 3 2 1


    Original     		PDF L14C1 L14C2 L14C1/L14C2 DS300305 L14C2 L14C1

    QSD733

    Abstract: No abstract text available
    Text: PLASTIC SILICON INFRARED PHOTODARLINGTON QSD733 PACKAGE DIMENSIONS 0.190 4.83 0.178 (4.52) 45° REFERENCE SURFACE 0.235 (5.97) 0.218 (5.54) 0.030 (0.76) 0.800 (20.3) MIN EMITTER COLLECTOR 0.050 (1.27) 0.100 (2.54) NOM SCHEMATIC 0.215 (5.46) NOM 0.020 (0.51)


    Original     		PDF QSD733 QSD733 QED523 TP-18 QED523 QSD733C

    qed12x

    Abstract: No abstract text available
    Text: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°


    Original     		PDF QED121/122/123 QSD122/123/124 QED122 qed12x

    D880

    Abstract: No abstract text available
    Text: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°


    Original     		PDF QED121/122/123 QSD122/123/124 QED122 D880

    Infrared Phototransistor

    Abstract: QSB320
    Text: QSB320F SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)


    Original     		PDF QSB320F QEB421 QEB421 QSB320FTR QSB320F Infrared Phototransistor QSB320

    K1 MARK 6PIN

    Abstract: MOC1193S
    Text: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES


    Original     		PDF MOC119 MOC119 E90700 diffe700, P01101067 MOC119300 MOC119300W MOC1193S MOC1193SD K1 MARK 6PIN

    Infrared Phototransistor

    Abstract: phototransistor support QSE122
    Text: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE122 PACKAGE DIMENSIONS 0.175 4.44 0.087 (2.22) Ø0.065 (1.65) 0.050 (1.27) 0.200 (5.08) Ø0.095 (2.41) 0.500 (12.70) MIN COLLECTOR EMITTER 0.020 (0.51) SQ. (2X) SCHEMATIC Collector 0.030 (0.76) 0.100 (2.54) 0.100 (2.54)


    Original     		PDF QSE122 QSE122 DS300367 Infrared Phototransistor phototransistor support

    Untitled

    Abstract: No abstract text available
    Text: PLASTIC SILICON INFRARED PHOTODARLINGTON QSE133 PACKAGE DIMENSIONS 0.175 4.44 0.087 (2.22) Ø0.065 (1.65) 0.050 (1.27) 0.200 (5.08) Ø0.095 (2.41) 0.500 (12.70) MIN COLLECTOR EMITTER SCHEMATIC 0.020 (0.51) SQ. (2X) COLLECTOR 0.030 (0.76) 0.100 (2.54) 0.100 (2.54)


    Original     		PDF QSE133 QSE133 DS300368

    Infrared Phototransistor

    Abstract: QSB320
    Text: QSB320 SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)


    Original     		PDF QSB320 QEB421 QSB320 Infrared Phototransistor

    K1N TRANSISTOR

    Abstract: MMBT3904 k1n marking code sot23 marking C1N MMBT3904 40V SOT23 marking K1N K1N diodes MMBT3904 c1n
    Text: MMBT3904 40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)


    Original     		PDF MMBT3904 MMBT3906) AEC-Q101 J-STD-020 MIL-STD-202, DS30036 K1N TRANSISTOR MMBT3904 k1n marking code sot23 marking C1N MMBT3904 40V SOT23 marking K1N K1N diodes MMBT3904 c1n

    MOC8020

    Abstract: MOC8021 IR phototransistor
    Text: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC8020 DESCRIPTION MOC8021 PACKAGE DIMENSIONS The MOC8020 and MOC8021 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.


    Original     		PDF MOC8020 MOC8021 MOC8020 MOC8021 MOC8020) MOC8021) E90700 IR phototransistor