DMN2004K
Abstract: DMN2004K-7
Text: DMN2004K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits RDS ON ID TA = 25°C 0.55Ω @ VGS = 4.5V 630mA 0.9Ω @ VGS = 1.8V 410mA V(BR)DSS • • • • • • • • • 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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PDF
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DMN2004K
630mA
410mA
DS30938
DMN2004K
DMN2004K-7
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Untitled
Abstract: No abstract text available
Text: DMN2004K Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) 20V 0.55Ω @ VGS = 4.5V 0.9Ω @ VGS = 1.8V ID TA = +25°C 630mA 410mA • Low On-Resistance: RDS(ON) = 550(max)mΩ @ VGS = 4.5V Low Gate Threshold Voltage
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Original
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PDF
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DMN2004K
630mA
410mA
AEC-Q101
DS30938
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Untitled
Abstract: No abstract text available
Text: DMN2004K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) 20V 0.55Ω @ VGS = 4.5V 0.9Ω @ VGS = 1.8V ID TA = +25°C 630mA 410mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching
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Original
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PDF
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DMN2004K
630mA
410mA
DS30938
|
Untitled
Abstract: No abstract text available
Text: DMN2004K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary RDS ON ID TA = 25°C 0.55Ω @ VGS = 4.5V 630mA 0.9Ω @ VGS = 1.8V 410mA V(BR)DSS • • • • • • • • • 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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PDF
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DMN2004K
630mA
410mA
DS30938
|
Untitled
Abstract: No abstract text available
Text: DMN2004K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON Low Gate Threshold Voltage
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Original
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PDF
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DMN2004K
AEC-Q101
OT-23
J-STD-020C
DS30938
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DMN2004K
Abstract: DMN2004K-7
Text: SPICE MODEL: DMN2004K DMN2004K Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR ADVANCEDNEW INFORMATION PRODUCT Features • · · · · · · · · Low On-Resistance: RDS ON SOT-23 Low Gate Threshold Voltage A Low Input Capacitance Dim Min
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Original
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PDF
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DMN2004K
OT-23
AEC-Q101
DS30938
DMN2004K
DMN2004K-7
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DMN2004K
Abstract: marking code k1 DMN2004K-7 J-STD-020D
Text: DMN2004K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance
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Original
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PDF
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DMN2004K
AEC-Q101
OT-23
J-STD-020D
MIL-STD-202,
DS30938
DMN2004K
marking code k1
DMN2004K-7
J-STD-020D
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Untitled
Abstract: No abstract text available
Text: DMN2004K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) 20V 0.55Ω @ VGS = 4.5V 0.9Ω @ VGS = 1.8V ID TA = +25°C 630mA 410mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching
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Original
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PDF
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DMN2004K
630mA
410mA
DS30938
|
MARKING code NAB
Abstract: No abstract text available
Text: DMN2004K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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Original
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PDF
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DMN2004K
AEC-Q101
OT-23
OT-23
J-STD-020C
MIL-STD-202,
DS30938
MARKING code NAB
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MARKING code NAB
Abstract: No abstract text available
Text: DMN2004K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) 20V 0.55Ω @ VGS = 4.5V 0.9Ω @ VGS = 1.8V ID TA = +25°C 630mA 410mA • Low On-Resistance: RDS(ON) = 550(max)mΩ @ VGS = 4.5V Low Gate Threshold Voltage
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Original
|
PDF
|
DMN2004K
630mA
410mA
AEC-Q101
DS30938
MARKING code NAB
|
Untitled
Abstract: No abstract text available
Text: DMN2004K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 0.55Ω @ VGS = 4.5V 630mA 0.9Ω @ VGS = 1.8V 410mA V(BR)DSS • • • • • • • • • 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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PDF
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DMN2004K
410mA
630mA
AEC-Q101
DS30938
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