Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2016T150K Features Item Summary 15 H(±10%), 400mA, 410mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
|
Original
|
PDF
|
BRC2016T150K
400mA,
410mA,
2000pcs
400mA
410mA
28MHz
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safety Applications (NR series H type / V type / S type) NRS6012T680MMGJV Features Item Summary 68 H(±20%), 440mA, 410mA Lifecycle Stage Mass Production
|
Original
|
PDF
|
NRS6012T680MMGJV
440mA,
410mA
AEC-Q200
1000pcs
100kHz
440mA
00kHz
|
C37 diode
Abstract: ESJC37-08 C37 high voltage diode HIGH VOLTAGE DIODE 10kv 10KV ESJC37 ESJC37-05 ESJC37-10
Text: ESJC37 5kV/540mA,8kV/410mA,10kV/310mA Outline Drawings HIGH VOLTAGE DIODE (mm) Type Name, Lot No. ESJC37 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin.
|
Original
|
PDF
|
ESJC37
5kV/540mA
8kV/410mA
10kV/310mA
ESJC37
24min
24min.
ESJC37-05
ESJC37-08
ESJC37-10
C37 diode
ESJC37-08
C37 high voltage diode
HIGH VOLTAGE DIODE 10kv
10KV
ESJC37-05
ESJC37-10
|
C37 diode
Abstract: C37 high voltage diode HIGH VOLTAGE DIODE 10kv transistor c37 high voltage diode 100 kv 8kv DIODE ESJC37
Text: ESJC37 5kV/540mA,8kV/410mA,10kV/310mA Outline Drawings HIGH VOLTEGE DIODE (mm) Type Name, Lot No. ESJC37 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark
|
Original
|
PDF
|
ESJC37
5kV/540mA
8kV/410mA
10kV/310mA
ESJC37
24min
24min.
ESJC37-05
ESJC37-08
ESJC37-10
C37 diode
C37 high voltage diode
HIGH VOLTAGE DIODE 10kv
transistor c37
high voltage diode 100 kv
8kv DIODE
|
PI6C410MAAEX
Abstract: 240mil DOT96 PI6C410M PI6C410MA PI6C410MAAE PI6C410MAE
Text: PI6C410M/410MA Clock Generator for Intel PCI Express Mobile Chipset Features Description • 14.318 MHz Crystal Input PI6C410M is a high-speed, low-noise clock generator designed to work with the Intel Mobile PCI Express Chipset. This Spread Spectrum PLL based clock generator reduces EMI emission and
|
Original
|
PDF
|
PI6C410M/410MA
PI6C410M
56-Pin
PI6C410MA
56-Pin,
240mil
PI6C410MAE
PI6C410MAAE
PI6C410MAAEX
DOT96
PI6C410MA
PI6C410MAAE
PI6C410MAE
|
F1400
Abstract: 0315PB 2t -3-6-5 smd TS615
Text: TS615 DUAL WIDE BAND OPERATIONAL AMPLIFIER • LOW NOISE : 2.5nV/√Hz ■ HIGH OUTPUT CURRENT : 410mA ■ VERY LOW HARMONIC AND INTERMODULATION DISTORTION ■ HIGH SLEW RATE : 410V/µs ■ -3dB BANDWIDTH : 40MHz@gain=12dB on 25Ω load single ended. ■ 21.2Vp-p DIFFERENTIAL OUTPUT SWING
|
Original
|
PDF
|
TS615
410mA
40MHz
TSSOP14
TS615
410mA.
F1400
0315PB
2t -3-6-5 smd
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Inductors for Signal Lines LB series M type / LE series M type LBM2016TR56J Features Item Summary 0.56 H(±5%), 410mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table
|
Original
|
PDF
|
LBM2016TR56J
410mA,
2000pcs
410mA
300MHz
30min
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LBC2016T3R3M Features Item Summary 3.3 H(±20%), 410mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
|
Original
|
PDF
|
LBC2016T3R3M
410mA,
2000pcs
96MHz
410mA
55MHz
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBC3225T680MR Features Item Summary 68 H(±20%), 320mA, 410mA, 1210 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions
|
Original
|
PDF
|
CBC3225T680MR
320mA,
410mA,
1000pcs
320mA
410mA
|
Untitled
Abstract: No abstract text available
Text: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 440mA 2.1Ω @ VGS = 4.5V 410mA V(BR)DSS • • • • • • • 60V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
PDF
|
DMG1026UV
410mA
440mA
AEC-Q101
DS35068
|
Untitled
Abstract: No abstract text available
Text: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 60V 1.8Ω @ VGS = 10V 2.1Ω @ VGS = 4.5V • • • • • • • ID TA = 25°C 440mA 410mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
PDF
|
DMG1026UV
440mA
410mA
AEC-Q101
OT563
DS35068
|
DMN2004K
Abstract: DMN2004K-7
Text: DMN2004K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits RDS ON ID TA = 25°C 0.55Ω @ VGS = 4.5V 630mA 0.9Ω @ VGS = 1.8V 410mA V(BR)DSS • • • • • • • • • 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
PDF
|
DMN2004K
630mA
410mA
DS30938
DMN2004K
DMN2004K-7
|
Untitled
Abstract: No abstract text available
Text: DMN2004K Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) 20V 0.55Ω @ VGS = 4.5V 0.9Ω @ VGS = 1.8V ID TA = +25°C 630mA 410mA • Low On-Resistance: RDS(ON) = 550(max)mΩ @ VGS = 4.5V Low Gate Threshold Voltage
|
Original
|
PDF
|
DMN2004K
630mA
410mA
AEC-Q101
DS30938
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2016T150K Features Item Summary 15 H(±10%), 400mA, 410mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
|
Original
|
PDF
|
BRC2016T150K
400mA,
410mA,
2000pcs
400mA
410mA
28MHz
|
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2016T150K Features Item Summary 15 H(±10%), 400mA, 410mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
|
Original
|
PDF
|
BRC2016T150K
400mA,
410mA,
2000pcs
400mA
410mA
28MHz
|
20 TQFN-EP
Abstract: No abstract text available
Text: 19-3843; Rev 3; 7/12 Space-Saving, 8-Channel Relay/Load Driver Features ♦ Supports Up to 50V Continuous Drain-to-Source Voltage ♦ Guaranteed Drive Current: ♦ VS ≥ 4.5V 200mA All Channels On 410mA (Individual Channels) ♦ VS ≤ 3.6V 100mA ♦ Built-In Output Clamp Protects Against Inductive
|
Original
|
PDF
|
MAX4896
20-pin,
200mA
MAX4896
20 TQFN-EP
|
Untitled
Abstract: No abstract text available
Text: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 440mA 2.1Ω @ VGS = 4.5V 410mA V(BR)DSS • • • • • • • 60V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
PDF
|
DMG1026UV
410mA
440mA
AEC-Q101
DS35068
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ0603S1N6C-T Features Item Summary 1.6nH(-0.2nH to +0.2nH), 410mA, 13, 0201 Lifecycle Stage Mass Production Standard packaging quantity (minimum)
|
Original
|
PDF
|
HKQ0603S1N6C-T
410mA,
15000pcs
500MHz
410mA
10000MHz
13min
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS SMD Power Inductors NR series H type NRH3010T220MN Features Item Summary 22 H(±20%), 380mA, 410mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
|
Original
|
PDF
|
NRH3010T220MN
380mA,
410mA
2000pcs
100kHz
380mA
22MHz
CaseS100kHz
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2012T2R2M Features Item Summary 2.2 H(±20%), 410mA, 770mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions
|
Original
|
PDF
|
CB2012T2R2M
410mA,
770mA,
3000pcs
96MHz
410mA
770mA
80MHz
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2518T470K Features Item Summary 47 H(±10%), 410mA, 300mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
|
Original
|
PDF
|
BRC2518T470K
410mA,
300mA,
2000pcs
410mA
300mA
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safety Applications (NR series H type / V type / S type) NRH3010T220MNV Features Item Summary 22 H(±20%), 380mA, 410mA Lifecycle Stage Mass Production
|
Original
|
PDF
|
NRH3010T220MNV
380mA,
410mA
AEC-Q200
2000pcs
100kHz
380mA
|
Untitled
Abstract: No abstract text available
Text: DMN2004K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) 20V 0.55Ω @ VGS = 4.5V 0.9Ω @ VGS = 1.8V ID TA = +25°C 630mA 410mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching
|
Original
|
PDF
|
DMN2004K
630mA
410mA
DS30938
|
Untitled
Abstract: No abstract text available
Text: — .810 MAX — - r * f .410MAX i s. I I .125 . I 1.330 MAX ,100 T Y P BLUE 8 E A D .LJ. .120 .100 TT" r är .250 f t .410MAX rr - L TERMINAL 1.062 D E T A IL 1.078 REV. .020 DIA. 3 T .040 DCO 63333 COIL: g 25°C CUSTOMER DATA SH EET B90 OHMS ±10%
|
OCR Scan
|
PDF
|
810MAX
410MAX
M39016M0-001
SR-7601LAY
SR-7601
|