Untitled
Abstract: No abstract text available
Text: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 440mA 2.1Ω @ VGS = 4.5V 410mA V(BR)DSS • • • • • • • 60V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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PDF
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DMG1026UV
410mA
440mA
AEC-Q101
DS35068
|
Untitled
Abstract: No abstract text available
Text: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 60V 1.8Ω @ VGS = 10V 2.1Ω @ VGS = 4.5V • • • • • • • ID TA = 25°C 440mA 410mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
|
PDF
|
DMG1026UV
440mA
410mA
AEC-Q101
OT563
DS35068
|
Untitled
Abstract: No abstract text available
Text: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 440mA 2.1Ω @ VGS = 4.5V 410mA V(BR)DSS • • • • • • • 60V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
PDF
|
DMG1026UV
410mA
440mA
AEC-Q101
DS35068
|
Untitled
Abstract: No abstract text available
Text: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = +25°C • Low On-Resistance • Low Input Capacitance 1.8Ω @ VGS = 10V 440mA • Fast Switching Speed 2.1Ω @ VGS = 4.5V 410mA • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
|
Original
|
PDF
|
DMG1026UV
440mA
410mA
AEC-Q101
DS35068
|
Untitled
Abstract: No abstract text available
Text: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features RDS ON ID TA = +25°C 1.8Ω @ VGS = 10V 440mA 2.1Ω @ VGS = 4.5V 410mA Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
|
Original
|
PDF
|
DMG1026UV
AEC-Q101
440mA
410mA
DS35068
|
Untitled
Abstract: No abstract text available
Text: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 440mA 2.1Ω @ VGS = 4.5V 410mA V(BR)DSS • • • • • • • 60V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
PDF
|
DMG1026UV
410mA
440mA
AEC-Q101
DS35068
|
Untitled
Abstract: No abstract text available
Text: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 440mA 2.1Ω @ VGS = 4.5V 410mA V(BR)DSS • • • • • • • 60V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
PDF
|
DMG1026UV
440mA
410mA
AEC-Q101
DS35068
|