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    IXTP182N055T

    Abstract: IXTA182N055T 182N055T DS99626 IXTP182N055 25a210
    Text: Preliminary Technical Information IXTA182N055T IXTP182N055T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 55 V = 182 A ≤ 5.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF IXTA182N055T IXTP182N055T O-263 O-220) 182N055T 1-06-A IXTP182N055T IXTA182N055T 182N055T DS99626 IXTP182N055 25a210

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    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA182N055T IXTP182N055T VDSS ID25 RDS on = 55 V = 182 A ≤ 5.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF IXTA182N055T IXTP182N055T O-263 182N055T 1-06-A