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    IXTA182N055T Price and Stock

    Littelfuse Inc IXTA182N055T

    MOSFET N-CH 55V 182A TO263
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    DigiKey IXTA182N055T Tube
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    Newark IXTA182N055T Bulk 300
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    Littelfuse Inc IXTA182N055T7

    MOSFET N-CH 55V 182A TO263-7
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    Newark IXTA182N055T7 Bulk 300
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    IXYS Corporation IXTA182N055T

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    Future Electronics IXTA182N055T Tube 50
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    IXYS Corporation IXTA182N055T7

    MOSFETs 182 Amps 55V 4.4 Rds
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    TTI IXTA182N055T7 Tube 300
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    IXYS Integrated Circuits Division IXTA182N055T

    MOSFET DIS.182A 55V N-CH TO263(D2PAK) TRENCHMV SMT
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    Ozdisan Elektronik IXTA182N055T
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    IXTA182N055T Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTA182N055T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 182A TO-263 Original PDF
    IXTA182N055T7 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 182A TO-263-7 Original PDF

    IXTA182N055T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTA182N055T7 RDS on = 55 V = 182 A ≤ 5.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF IXTA182N055T7 O-263 182N055T 1-06-A

    182N055T

    Abstract: T182N 182N055
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA182N055T7 VDSS ID25 RDS on = 55 V = 182 A ≤ 5.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF IXTA182N055T7 O-263 182N055T 1-06-A 182N055T T182N 182N055

    IXTP182N055T

    Abstract: IXTA182N055T 182N055T DS99626 IXTP182N055 25a210
    Text: Preliminary Technical Information IXTA182N055T IXTP182N055T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 55 V = 182 A ≤ 5.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF IXTA182N055T IXTP182N055T O-263 O-220) 182N055T 1-06-A IXTP182N055T IXTA182N055T 182N055T DS99626 IXTP182N055 25a210

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA182N055T IXTP182N055T VDSS ID25 RDS on = 55 V = 182 A ≤ 5.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF IXTA182N055T IXTP182N055T O-263 182N055T 1-06-A

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


    Original     		PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T