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    DYNAMIC RAM CMOS 16PIN Search Results

    DYNAMIC RAM CMOS 16PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy

    DYNAMIC RAM CMOS 16PIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MH89760B

    Abstract: MH89790B MT8920B MT8920BE MT8920BP MT8920BS MT8976 MT8979 4A63 VDD52
    Text: ISO-CMOS ST-BUS FAMILY MT8920B ST-BUS Parallel Access Circuit Features • • • • • • • • ISSUE 7 High speed parallel access to the serial ST-BUS Parallel bus optimized for 68000 µP mode 1 Fast dual-port RAM access (mode 2) Access time: 120 nsec


    Original     		PDF MT8920B MT8920BE MT8920BP MT8920BS MH89760B MH89790B MT8920B MT8920BE MT8920BP MT8920BS MT8976 MT8979 4A63 VDD52

    74HC12

    Abstract: ST-BUS MH89760B MH89790B MT8920B MT8920BE MT8920BP MT8920BS MT8976 MT8979
    Text: ISO-CMOS ST-BUS FAMILY MT8920B ST-BUS Parallel Access Circuit  Features • • • • • • • • ISSUE 7 High speed parallel access to the serial ST-BUS Parallel bus optimized for 68000 µP mode 1 Fast dual-port RAM access (mode 2) Access time: 120 nsec


    Original     		PDF MT8920B MT8920BE MT8920BP MT8920BS 74HC12 ST-BUS MH89760B MH89790B MT8920B MT8920BE MT8920BP MT8920BS MT8976 MT8979

    Untitled

    Abstract: No abstract text available
    Text: MEMORY 1M X 16 BIT FAST PAGE MOBEDYNAMICRA MB81V16160B-50/-60/-50L/-60L CMOS 1,048,576 x 16 Bit Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu MB81V16160B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The MB81V16160B features a ‘last page” mode of operation whereby


    OCR Scan     		PDF MB81V16160B-50/-60/-50L/-60L MB81V16160B 16-bit F9712

    MB81C258-12

    Abstract: c258 MB81C258 MB81C258-10
    Text: FU JITSU 262144 BIT CMOS STATIC COLUMN DYNAMIC RAM MB81C258-10 MB81C258-12 MB81C258-15 1 1 1 O c to b e r 1 9 8 8 E d itio n 3 .0 262,144 x 1 BIT CMOS STATIC COLUMN DYNAMIC RAM The Fujitsu MB 81C258 is CMOS static colum n dynam ic random access memo­ ry, SC-DRAM, w hich is organized as 262144 w ord by 1 bit. This SC-DRAM is


    OCR Scan     		PDF MB81C258-10 MB81C258-12 MB81C258-15 81C258 16030S MB81C258-10 c258 MB81C258

    Untitled

    Abstract: No abstract text available
    Text: s -n o y 0 0 1 8 9 1 tfY i ^ j& P R E L IM IN A R Y f t SEMICONDUCTOR HY51C64 65,536X1-Bit CMOS Dynamic RAM FEBRUARY 1986 DESCRIPTION The HY51C64 is a high speed 65,536 bit CMOS dynamic Random Access Memory. Fabricated in CMOS technology, the HY51C64 offers features not


    OCR Scan     		PDF HY51C64 536X1-Bit HY51C64 16-pin 100ns 120ns 150ns K29793/4

    HY53C256

    Abstract: HY53C256LS
    Text: HYUNDAI HY53C256 Series 256Kx1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


    OCR Scan     		PDF HY53C256 256Kx1-bit 300mil 16pin 330mil 18pin standbY556) HY53C256LS

    HY53C256LS

    Abstract: HY53C256S-70 HY53C256 HY53C256LF HY53C256LS70
    Text: HYUNDAI HY53C256 Series 256KX 1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


    OCR Scan     		PDF HY53C256 300mil 16pin 330mil 18pin 300BSC 1AA01-20-MAY94 HY53C256LS HY53C256S-70 HY53C256LF HY53C256LS70

    MAY94

    Abstract: vve.3 HY53C256 A08H
    Text: HY53C256 Series HYUNDAI 256K x1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


    OCR Scan     		PDF HY53C256 300mtl 16pin 330mil 18pin 300BSC 1AA01-20-MAY84 MAY94 vve.3 A08H

    Untitled

    Abstract: No abstract text available
    Text: Am90C257 256K x 1 CMOS Static Column Dynamic RAM DISTINCTIVE CHARACTERISTICS • • C ontinuous data rate over 25 MHz Lower pow er dissipation via CMOS process - 20-m W standby mode -3 0 0 -m W operating mode High-speed operation - 80-ns RAS access tim es


    OCR Scan     		PDF Am90C257 80-ns -20-mW 35-ns 300-mW

    bc6 csr

    Abstract: CSR BC6 wf vqc 10 d a6 LC32256 LC32256P
    Text: Ordering number : EN4700B CMOS LSI LC32256P-80 256 K 262144 words x 1 bit DRAM Fast Page Modem Overview The LC32256P is a CMOS dynamic RAM operating on a single 5 V power source and having a 262144 words x 1 bit configuration. Equipped with high speed and low


    OCR Scan     		PDF EN4700B LC32256P-80 LC32256P 16-pin QG17b7t. LC32256P-80 0D17b77 bc6 csr CSR BC6 wf vqc 10 d a6 LC32256

    Untitled

    Abstract: No abstract text available
    Text: Am 90C 257 256K x 1 CMOS Static Column Dynamic RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • Continuous data rate over 25 MHz Lower power dissipation via CMOS process - 20-mW standby mode -300-m W operating mode • • • High-speed operation - 80-ns RAS access times


    OCR Scan     		PDF 20-mW -300-m 80-ns 130-ns Am90C257 WF010880

    HY53C256LF

    Abstract: HY53C256 HY53C256LS D0022 JRC5 mb75a
    Text: HY53C256 Series •HYUNDAI 256K X 1-bit CMOS DRAM DESCRIPTION f HY53C25f l fas* dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon i!in|ra0C^ f SHH° 9y as WeH as advanced circuit techniques to provide wide operating margins to the users


    OCR Scan     		PDF HY53C256 HY53C25f 300mil 16pin 330m7l8pTn 1aa01-20-may84 HY53C256S HY53C256LF HY53C256LS D0022 JRC5 mb75a

    UPD4265

    Abstract: No abstract text available
    Text: SEC /¿PD4265 6 5 ,5 3 6 x 1 -BIT DYNAMIC CMOS RAM NEC Electronics Inc. Revision 1 Description Pin Configuration The NEC /UPD4265 is a 65,536-word by 1-bit d ynam ic CM O S Random Access M em ory RAM designed to operate from a single + 5 V p ow er supply. The


    OCR Scan     		PDF uPD4265 536-word PD4265 PD4265

    Untitled

    Abstract: No abstract text available
    Text: Am90C256 256K x 1 CMOS Enhanced Page Mode Dynamic RAM PRELIMINARY 9SZD06UIV DISTINCTIVE CHARACTERISTICS • • • • Continuous data rate over 25 MHz Random access within a row Flow-through column latch for pipelining Low operating current- 7 0 mA • •


    OCR Scan     		PDF Am90C256 9SZD06UIV 80-ns 130-ns 20-ns

    MB81C258-12

    Abstract: No abstract text available
    Text: 262144 BIT CMOS STATIC COLUMN DYNAMIC RAM MB81C258-10 MB81C258-12 MB81C258-15 O ctob er 1988 E d itio n 3.0 262,144 x 1 BIT CMOS STATIC COLUMN DYNAMIC RAM T he F u jits u M B 8 1 C 2 5 8 is CM O S s ta tic c o lu m n d y n a m ic random access m e m o ­ ry , S C -D R A M , w h ic h is organized as 2 6 2 1 4 4 w o rd b y 1 b it. T his S C -D R A M is


    OCR Scan     		PDF d81C258-15 08i1Q MB81C258-10 MB81C258-12 MB81C258-15

    Untitled

    Abstract: No abstract text available
    Text: Am90C256 256K x 1 CMOS Enhanced Page Mode Dynamic RAM PRELIMINARY 9S2006UJV DISTINCTIVE CHARACTERISTICS Continuous data rate over 25 MHz Random access within a row Flow-through column latch for pipelining Low operating current- 7 0 mA • • High-speed operation - 80-ns RAS access,


    OCR Scan     		PDF Am90C256 9S2006UJV 80-ns 130-ns

    Untitled

    Abstract: No abstract text available
    Text: Am90C255 256K x 1 CMOS Nibble Mode Dynamic RAM Am90C255 PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • High density 256K x 1 Low-power dissipation — 358 mW active High-speed operation — 80-ns access, 130-ns cycle times High-speed Nibble Mode - 15-ns access, 35-ns cycle times


    OCR Scan     		PDF Am90C255 80-ns 130-ns 15-ns 35-ns 90C255 WF009742 WF009752

    Untitled

    Abstract: No abstract text available
    Text: Am90C255 256K x 1 CMOS Nibble Mode Dynamic RAM PRELIMINARY SSZ006WV DISTINCTIVE CHARACTERISTICS • • • High density 256K x 1 Low-power dissipation — 358 mW active High-speed operation — 80-ns access, 130-ns cycle times • High-speed Nibble Mode - 15-ns access, 35-ns cycle times


    OCR Scan     		PDF Am90C255 SSZ006WV 80-ns 130-ns 15-ns 35-ns WF009712 WF009742

    Untitled

    Abstract: No abstract text available
    Text: VITELIC V51C64 FAMILY HIGH PERFORMANCE LOW POWER 65,536x1 BIT CMOS DYNAMIC RAM V51C64-10 V51C64L-10 V51C64-12 V51C64L-12 V51C64-15 V51C64L-15 100 160 35 100 160 35 120 190 45 120 190 45 150 245 55 150 245 55 Maximum Access Time ns Minimum Cycle Time (ns)


    OCR Scan     		PDF V51C64 536x1 V51C64-10 V51C64L-10 V51C64-12 V51C64L-12 V51C64-15 V51C64L-15 V51C64L

    Untitled

    Abstract: No abstract text available
    Text: VITELIC CORP A3 'ÌSDS310 00ODI11 □ i ~ 9502310 VITELIC CORP V IT E L IC 83P 00111 0 7 - V51C64 FAMILY HIGH PERFO RM AN CE LOW POWER 65,536x1 BIT CMOS DYNAMIC RAM V51C64-10 V51C64L-10 V51C64-12 V51C64L-12 V51C64-15 V51C64L-15 100 160 35 100 160 35 120 190


    OCR Scan     		PDF SDS310 00ODI11 V51C64 536x1 V51C64-10 V51C64L-10 V51C64-12 V51C64L-12 V51C64-15 V51C64L-15

    k22s

    Abstract: HP 1003 WA
    Text: iw VITELIC V53C258A FAMILY HIGH PERFORMANCE, LOW POWER 2 5 6 K X 1 B IT STATIC COLUMN CMOS DYNAMIC RAM ‘ 60/60L HIGH PERFORMANCE V53C25SA 70/70L 80/80L 10/10L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA) 30 ns


    OCR Scan     		PDF V53C258A 256KX V53C25SA 60/60L 70/70L 80/80L 10/10L 115ns V53C258AL V53C258A-10 k22s HP 1003 WA

    Untitled

    Abstract: No abstract text available
    Text: IW VITELIC V53C258A FAMILY HIGH PERFORMANCE, LOW POWER 2 5 6 K X 1 B IT STATIC COLUMN CMOS DYNAMIC RAM ‘ 60/60L HIGH PERFORMANCE V53C258A tRAC 70/70L 80/80L 10/10L 60 ns 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns 40 ns 45 ns


    OCR Scan     		PDF V53C258A 60/60L V53C258A 70/70L 80/80L 10/10L V53C258AL

    V51C64L-15

    Abstract: celica V51C64-10 V51C64-12 V51C64-15 V51C64L-10 V51C64L-12
    Text: V IT E U C V51C64 FAMILY HIGH PERFORMANCE LOW POWER 6 5 ,5 3 6 x 1 B IT CMOS DYNAMIC RAM V51C64-10 V51C64L-10 V51C64-12 V51C64L-12 V51C64-15 V51C64L-15 100 160 35 100 160 35 120 190 45 120 190 45 150 245 55 150 245 55 Maximum Access Time ns Minimum Cycle Time (ns)


    OCR Scan     		PDF V51C64 536x1 V51C64-10 V51C64L-10 V51C64-12 V51C64L-12 V51C64-15 V51C64L-15 V51C64-12 V51C64L V51C64L-15 celica

    16PIN

    Abstract: 51C64H-12 51C64H-8 51C64HL-12 51C64L-12 51C65L-10 51C65L-12 HY51C64-10 HY51C64-12 HY51C64-15
    Text: - 172 — 64K A • m m m % it £ OC TRCY TCAD TAH TRAC max n s) ■ in (n s) CMOS Dynamic 4 7 f y / U f t ■ in (n s) ■in (n s) TP ■ in (n s) TWCY (n s) RAM(65536x1) m « TC'H ■in (n s) TfiWC n in (n s) VDD o r VCC (V) IDD nax (aA) À ID D STANDBY


    OCR Scan     		PDF 65536x1) 16PIN 51CB4H-10 51C64H-12 51C64H-8 51CB4HL-1D HY5164-15 V51C64-10 V51C64-12 V51C64-15 51C64HL-12 51C64L-12 51C65L-10 51C65L-12 HY51C64-10 HY51C64-12 HY51C64-15