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    DYNAMIC RAM CMOS 16PIN Search Results

    DYNAMIC RAM CMOS 16PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy

    DYNAMIC RAM CMOS 16PIN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MH89760B

    Abstract: MH89790B MT8920B MT8920BE MT8920BP MT8920BS MT8976 MT8979 4A63 VDD52
    Text: ISO-CMOS ST-BUS FAMILY MT8920B ST-BUS Parallel Access Circuit Features • • • • • • • • ISSUE 7 High speed parallel access to the serial ST-BUS Parallel bus optimized for 68000 µP mode 1 Fast dual-port RAM access (mode 2) Access time: 120 nsec


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    MT8920B MT8920BE MT8920BP MT8920BS MH89760B MH89790B MT8920B MT8920BE MT8920BP MT8920BS MT8976 MT8979 4A63 VDD52 PDF

    74HC12

    Abstract: ST-BUS MH89760B MH89790B MT8920B MT8920BE MT8920BP MT8920BS MT8976 MT8979
    Text: ISO-CMOS ST-BUS FAMILY MT8920B ST-BUS Parallel Access Circuit  Features • • • • • • • • ISSUE 7 High speed parallel access to the serial ST-BUS Parallel bus optimized for 68000 µP mode 1 Fast dual-port RAM access (mode 2) Access time: 120 nsec


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    MT8920B MT8920BE MT8920BP MT8920BS 74HC12 ST-BUS MH89760B MH89790B MT8920B MT8920BE MT8920BP MT8920BS MT8976 MT8979 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORY 1M X 16 BIT FAST PAGE MOBEDYNAMICRA MB81V16160B-50/-60/-50L/-60L CMOS 1,048,576 x 16 Bit Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu MB81V16160B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The MB81V16160B features a ‘last page” mode of operation whereby


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    MB81V16160B-50/-60/-50L/-60L MB81V16160B 16-bit F9712 PDF

    MB81C258-12

    Abstract: c258 MB81C258 MB81C258-10
    Text: FU JITSU 262144 BIT CMOS STATIC COLUMN DYNAMIC RAM MB81C258-10 MB81C258-12 MB81C258-15 1 1 1 O c to b e r 1 9 8 8 E d itio n 3 .0 262,144 x 1 BIT CMOS STATIC COLUMN DYNAMIC RAM The Fujitsu MB 81C258 is CMOS static colum n dynam ic random access memo­ ry, SC-DRAM, w hich is organized as 262144 w ord by 1 bit. This SC-DRAM is


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    MB81C258-10 MB81C258-12 MB81C258-15 81C258 16030S MB81C258-10 c258 MB81C258 PDF

    Untitled

    Abstract: No abstract text available
    Text: s -n o y 0 0 1 8 9 1 tfY i ^ j& P R E L IM IN A R Y f t SEMICONDUCTOR HY51C64 65,536X1-Bit CMOS Dynamic RAM FEBRUARY 1986 DESCRIPTION The HY51C64 is a high speed 65,536 bit CMOS dynamic Random Access Memory. Fabricated in CMOS technology, the HY51C64 offers features not


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    HY51C64 536X1-Bit HY51C64 16-pin 100ns 120ns 150ns K29793/4 PDF

    HY53C256

    Abstract: HY53C256LS
    Text: HYUNDAI HY53C256 Series 256Kx1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


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    HY53C256 256Kx1-bit 300mil 16pin 330mil 18pin standbY556) HY53C256LS PDF

    HY53C256LS

    Abstract: HY53C256S-70 HY53C256 HY53C256LF HY53C256LS70
    Text: HYUNDAI HY53C256 Series 256KX 1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


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    HY53C256 300mil 16pin 330mil 18pin 300BSC 1AA01-20-MAY94 HY53C256LS HY53C256S-70 HY53C256LF HY53C256LS70 PDF

    MAY94

    Abstract: vve.3 HY53C256 A08H
    Text: HY53C256 Series HYUNDAI 256K x1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


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    HY53C256 300mtl 16pin 330mil 18pin 300BSC 1AA01-20-MAY84 MAY94 vve.3 A08H PDF

    Untitled

    Abstract: No abstract text available
    Text: Am90C257 256K x 1 CMOS Static Column Dynamic RAM DISTINCTIVE CHARACTERISTICS • • C ontinuous data rate over 25 MHz Lower pow er dissipation via CMOS process - 20-m W standby mode -3 0 0 -m W operating mode High-speed operation - 80-ns RAS access tim es


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    Am90C257 80-ns -20-mW 35-ns 300-mW PDF

    bc6 csr

    Abstract: CSR BC6 wf vqc 10 d a6 LC32256 LC32256P
    Text: Ordering number : EN4700B CMOS LSI LC32256P-80 256 K 262144 words x 1 bit DRAM Fast Page Modem Overview The LC32256P is a CMOS dynamic RAM operating on a single 5 V power source and having a 262144 words x 1 bit configuration. Equipped with high speed and low


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    EN4700B LC32256P-80 LC32256P 16-pin QG17b7t. LC32256P-80 0D17b77 bc6 csr CSR BC6 wf vqc 10 d a6 LC32256 PDF

    Untitled

    Abstract: No abstract text available
    Text: Am 90C 257 256K x 1 CMOS Static Column Dynamic RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • Continuous data rate over 25 MHz Lower power dissipation via CMOS process - 20-mW standby mode -300-m W operating mode • • • High-speed operation - 80-ns RAS access times


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    20-mW -300-m 80-ns 130-ns Am90C257 WF010880 PDF

    HY53C256LF

    Abstract: HY53C256 HY53C256LS D0022 JRC5 mb75a
    Text: HY53C256 Series •HYUNDAI 256K X 1-bit CMOS DRAM DESCRIPTION f HY53C25f l fas* dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon i!in|ra0C^ f SHH° 9y as WeH as advanced circuit techniques to provide wide operating margins to the users


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    HY53C256 HY53C25f 300mil 16pin 330m7l8pTn 1aa01-20-may84 HY53C256S HY53C256LF HY53C256LS D0022 JRC5 mb75a PDF

    UPD4265

    Abstract: No abstract text available
    Text: SEC /¿PD4265 6 5 ,5 3 6 x 1 -BIT DYNAMIC CMOS RAM NEC Electronics Inc. Revision 1 Description Pin Configuration The NEC /UPD4265 is a 65,536-word by 1-bit d ynam ic CM O S Random Access M em ory RAM designed to operate from a single + 5 V p ow er supply. The


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    uPD4265 536-word PD4265 PD4265 PDF

    Untitled

    Abstract: No abstract text available
    Text: Am90C256 256K x 1 CMOS Enhanced Page Mode Dynamic RAM PRELIMINARY 9SZD06UIV DISTINCTIVE CHARACTERISTICS • • • • Continuous data rate over 25 MHz Random access within a row Flow-through column latch for pipelining Low operating current- 7 0 mA • •


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    Am90C256 9SZD06UIV 80-ns 130-ns 20-ns PDF

    MB81C258-12

    Abstract: No abstract text available
    Text: 262144 BIT CMOS STATIC COLUMN DYNAMIC RAM MB81C258-10 MB81C258-12 MB81C258-15 O ctob er 1988 E d itio n 3.0 262,144 x 1 BIT CMOS STATIC COLUMN DYNAMIC RAM T he F u jits u M B 8 1 C 2 5 8 is CM O S s ta tic c o lu m n d y n a m ic random access m e m o ­ ry , S C -D R A M , w h ic h is organized as 2 6 2 1 4 4 w o rd b y 1 b it. T his S C -D R A M is


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    d81C258-15 08i1Q MB81C258-10 MB81C258-12 MB81C258-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: Am90C256 256K x 1 CMOS Enhanced Page Mode Dynamic RAM PRELIMINARY 9S2006UJV DISTINCTIVE CHARACTERISTICS Continuous data rate over 25 MHz Random access within a row Flow-through column latch for pipelining Low operating current- 7 0 mA • • High-speed operation - 80-ns RAS access,


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    Am90C256 9S2006UJV 80-ns 130-ns PDF

    Untitled

    Abstract: No abstract text available
    Text: Am90C255 256K x 1 CMOS Nibble Mode Dynamic RAM Am90C255 PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • High density 256K x 1 Low-power dissipation — 358 mW active High-speed operation — 80-ns access, 130-ns cycle times High-speed Nibble Mode - 15-ns access, 35-ns cycle times


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    Am90C255 80-ns 130-ns 15-ns 35-ns 90C255 WF009742 WF009752 PDF

    Untitled

    Abstract: No abstract text available
    Text: Am90C255 256K x 1 CMOS Nibble Mode Dynamic RAM PRELIMINARY SSZ006WV DISTINCTIVE CHARACTERISTICS • • • High density 256K x 1 Low-power dissipation — 358 mW active High-speed operation — 80-ns access, 130-ns cycle times • High-speed Nibble Mode - 15-ns access, 35-ns cycle times


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    Am90C255 SSZ006WV 80-ns 130-ns 15-ns 35-ns WF009712 WF009742 PDF

    Untitled

    Abstract: No abstract text available
    Text: VITELIC V51C64 FAMILY HIGH PERFORMANCE LOW POWER 65,536x1 BIT CMOS DYNAMIC RAM V51C64-10 V51C64L-10 V51C64-12 V51C64L-12 V51C64-15 V51C64L-15 100 160 35 100 160 35 120 190 45 120 190 45 150 245 55 150 245 55 Maximum Access Time ns Minimum Cycle Time (ns)


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    V51C64 536x1 V51C64-10 V51C64L-10 V51C64-12 V51C64L-12 V51C64-15 V51C64L-15 V51C64L PDF

    Untitled

    Abstract: No abstract text available
    Text: VITELIC CORP A3 'ÌSDS310 00ODI11 □ i ~ 9502310 VITELIC CORP V IT E L IC 83P 00111 0 7 - V51C64 FAMILY HIGH PERFO RM AN CE LOW POWER 65,536x1 BIT CMOS DYNAMIC RAM V51C64-10 V51C64L-10 V51C64-12 V51C64L-12 V51C64-15 V51C64L-15 100 160 35 100 160 35 120 190


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    SDS310 00ODI11 V51C64 536x1 V51C64-10 V51C64L-10 V51C64-12 V51C64L-12 V51C64-15 V51C64L-15 PDF

    k22s

    Abstract: HP 1003 WA
    Text: iw VITELIC V53C258A FAMILY HIGH PERFORMANCE, LOW POWER 2 5 6 K X 1 B IT STATIC COLUMN CMOS DYNAMIC RAM ‘ 60/60L HIGH PERFORMANCE V53C25SA 70/70L 80/80L 10/10L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA) 30 ns


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    V53C258A 256KX V53C25SA 60/60L 70/70L 80/80L 10/10L 115ns V53C258AL V53C258A-10 k22s HP 1003 WA PDF

    Untitled

    Abstract: No abstract text available
    Text: IW VITELIC V53C258A FAMILY HIGH PERFORMANCE, LOW POWER 2 5 6 K X 1 B IT STATIC COLUMN CMOS DYNAMIC RAM ‘ 60/60L HIGH PERFORMANCE V53C258A tRAC 70/70L 80/80L 10/10L 60 ns 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns 40 ns 45 ns


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    V53C258A 60/60L V53C258A 70/70L 80/80L 10/10L V53C258AL PDF

    V51C64L-15

    Abstract: celica V51C64-10 V51C64-12 V51C64-15 V51C64L-10 V51C64L-12
    Text: V IT E U C V51C64 FAMILY HIGH PERFORMANCE LOW POWER 6 5 ,5 3 6 x 1 B IT CMOS DYNAMIC RAM V51C64-10 V51C64L-10 V51C64-12 V51C64L-12 V51C64-15 V51C64L-15 100 160 35 100 160 35 120 190 45 120 190 45 150 245 55 150 245 55 Maximum Access Time ns Minimum Cycle Time (ns)


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    V51C64 536x1 V51C64-10 V51C64L-10 V51C64-12 V51C64L-12 V51C64-15 V51C64L-15 V51C64-12 V51C64L V51C64L-15 celica PDF

    16PIN

    Abstract: 51C64H-12 51C64H-8 51C64HL-12 51C64L-12 51C65L-10 51C65L-12 HY51C64-10 HY51C64-12 HY51C64-15
    Text: - 172 — 64K A • m m m % it £ OC TRCY TCAD TAH TRAC max n s) ■ in (n s) CMOS Dynamic 4 7 f y / U f t ■ in (n s) ■in (n s) TP ■ in (n s) TWCY (n s) RAM(65536x1) m « TC'H ■in (n s) TfiWC n in (n s) VDD o r VCC (V) IDD nax (aA) À ID D STANDBY


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    65536x1) 16PIN 51CB4H-10 51C64H-12 51C64H-8 51CB4HL-1D HY5164-15 V51C64-10 V51C64-12 V51C64-15 51C64HL-12 51C64L-12 51C65L-10 51C65L-12 HY51C64-10 HY51C64-12 HY51C64-15 PDF