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Catalog Datasheet	MFG & Type	Document Tags	PDF
1SN10 Abstract: No abstract text available Text: IXYS IXTN15N100 VD S S MegaMOS FET = 1000 V = 15 A D 25 R D S on N-Channel Enhancement Mode = 0.6 Q OD G I s Sym bol Test Conditions ''- P ' ¿s Maximum Ratings V DSS T j = 2 5°C to 150°C 1000 V v OGR T j = 2 5°C to 150°C; R GS = 10 k£l 1000 V V Gs	OCR Scan	IXTN15N100 OT-227 E1S3432 C2-98 15N100 C2-99 1SN10	PDF

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MFG & Type

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1SN10

Abstract: No abstract text available
Text: IXYS IXTN15N100 VD S S MegaMOS FET = 1000 V = 15 A D 25 R D S on N-Channel Enhancement Mode = 0.6 Q OD G I s Sym bol Test Conditions ''- P ' ¿s Maximum Ratings V DSS T j = 2 5°C to 150°C 1000 V v OGR T j = 2 5°C to 150°C; R GS = 10 k£l 1000 V V Gs

OCR Scan

IXTN15N100 OT-227 E1S3432 C2-98 15N100 C2-99 1SN10

PDF