transistor KL3
Abstract: EDEI
Text: :8B0,3 B?<;6 BC3C7 A7<3G 8LIWXULV Z w?;B;9JH?9 IJH;D=J> jmhh2 Z }xw IJ7JKI ?D:?97JEH Z ,>EJE ?IEB7J?ED Z uK?BJe?D IDK88;H Z 6;HE 9HEII EH H7D:EC JKHDeED Z ,H?DJ;: 9?H9K?J 8E7H: CEKDJ Z xDL?HEDC;DJ7B <H?;D:BO FHE:K9J a.E{/ 9ECFB?7DJb ;>@DC a07 s jm 97>7A3< a07 s jm
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97JEH
IDK88
9EDJ79J
9JHE79EKIJ
transistor KL3
EDEI
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BFAP20
Abstract: samsung ltcc G.SHDSL Industry Single-Chip VTSA7 447h LQ13 tag 9018 LM 205h 276 741h EoPDH
Text: Rev: 063008 DS33X162/DS33X161/DS33X82/DS33X81/ DS33X42/DS33X41/DS33X11/DS33W41/DS33W11 Ethernet Over PDH Mapping Devices General Description The DS33X162 family of semiconductor devices extend 10/100/1000Mbps Ethernet LAN segments by encapsulating MAC frames in GFP-F, HDLC, cHDLC,
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DS33X162/DS33X161/DS33X82/DS33X81/
DS33X42/DS33X41/DS33X11/DS33W41/DS33W11
DS33X162
10/100/1000Mbps
52Mbps
35/Optical.
DS33W11
DS33W41,
DS33X41,
DS33X42,
BFAP20
samsung ltcc
G.SHDSL Industry Single-Chip
VTSA7
447h
LQ13
tag 9018
LM 205h
276 741h
EoPDH
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Untitled
Abstract: No abstract text available
Text: Rev: 012108 DS33X162/DS33X161/DS33X82/DS33X81/ DS33X42/DS33X41/DS33X11/DS33W41/DS33W11 Ethernet Over PDH Mapping Devices General Description The DS33X162 family of semiconductor devices extend 10/100/1000Mbps Ethernet LAN segments by encapsulating MAC frames in GFP-F, HDLC, cHDLC,
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DS33X162/DS33X161/DS33X82/DS33X81/
DS33X42/DS33X41/DS33X11/DS33W41/DS33W11
DS33X162
10/100/1000Mbps
52Mbps
35/Optical.
DS33X162/X161/X82/X81/X42/X41/X11/W41/W11
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Untitled
Abstract: No abstract text available
Text: Rev: 063008 DS3 3 X 1 6 2 /DS3 3 X 1 6 1 /DS3 3 X 8 2 /DS3 3 X 8 1 / DS3 3 X 4 2 /DS3 3 X 4 1 /DS3 3 X 1 1 /DS3 3 W4 1 /DS3 3 W1 1 Et he r ne t Ove r PDH M a pping Devic e s Ge ne ra l De sc ript ion The DS33X162 family of semiconductor devices extend 10/100/1000Mbps Ethernet LAN segments by
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DS33X162
10/100/1000Mbps
52Mbps
35/Optical.
DS33W11
DS33W41,
DS33X41,
DS33X42,
DS33X82,
DS33X161
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samsung ltcc
Abstract: No abstract text available
Text: PRELIMINARY Rev: 060607 DS33X162/DS33X161/DS33X82/DS33X81/ DS33X42/DS33X41/DS33X11/DS33W41/DS33W11 Ethernet Over PDH Mapping Devices General Description The DS33X162 family of semiconductor devices extend 10/100/1000Mbps Ethernet LAN segments by encapsulating MAC frames in GFP-F, HDLC, cHDLC,
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DS33X162/DS33X161/DS33X82/DS33X81/
DS33X42/DS33X41/DS33X11/DS33W41/DS33W11
200ms
256Mb,
125MHz
DS33X162
deviX81/X42/X41/X11/W41/W11
144-Ball
56-G6008-003)
DS33X162/X161/X82/X81/X42/X41/X11/W41/W11
samsung ltcc
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Untitled
Abstract: No abstract text available
Text: Rev: 060607 DS33X162/DS33X161/DS33X82/DS33X81/ DS33X42/DS33X41/DS33X11/DS33W41/DS33W11 Ethernet Over PDH Mapping Devices General Description ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Y ♦ ♦ 10/100/1000 IEEE 802.3 MAC MII/RMII/GMII with Autonegotiation and Flow Control
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DS33X162/DS33X161/DS33X82/DS33X81/
DS33X42/DS33X41/DS33X11/DS33W41/DS33W11
200ms
256Mb,
125MHz
144-Ball
56-G6008-003)
DS33X162/X161/X82/X81/X42/X41/X11/W41/W11
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Untitled
Abstract: No abstract text available
Text: SONY _ CXB1549Q Laser Diode Driver Prelim inary Description The CXB1549Q is a high-speed monolithic Laser Diode Driver/Current Switch with ECL/PECL input level. Open collector outputs are provided at the output pins Q, QB and have the capacity of driving
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CXB1549Q
CXB1549Q
50mAp-p
25Gbps
40PIN
QFP-40P-L01
QFP040-P-0707
42/COPPER
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Untitled
Abstract: No abstract text available
Text: bOE 0 P100 i l ADTr • TDGlTMb 00OG034 Zementierter Drahtdrehwiderstand VISHAY/DRAL D|W fll 476 Potentiom ètre bobiné cim enté Cemented w irew ound potentiom eter bel 120 W Fertigungsbereich Plage des valeurs Resistance range B elastbarkeit ÖQ2 ■ à
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00OG034
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PD488170L
Abstract: NEC 488170L D488170L RDRAM cross reference NEC RDRAM 36 REF05
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT jiiP D 4 8 8 1 7 0 L 18M-BIT Base Rambus DRAM 1M-WORD X 9-BIT X 2-BANK ★ Description The 18-Megabit Rambus DRAM RDRAM is an extremely-high-speed CMOS DRAM organized as 1M word x 9 bits x 2 banks and capable of bursting up to 256 bytes of data at 1.67 ns per byte. The use of Rambus
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18M-BIT
18-Megabit
/XPD488170L
P32G6-65A
bM27525
PD488170L
NEC 488170L
D488170L
RDRAM cross reference
NEC RDRAM 36
REF05
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32A11
Abstract: No abstract text available
Text: SERIES SMA Serie SMA Series SMA Precision coaxial connector for microwave applications. The maximum fre quency is 24 GHz, recommended frequency range up to 18 GHz. SMA connectors satisfy high quality standards and are characterized by high reliability, high mechanical stability, long life, and optimum electrical prop
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D-84526
Fax086
17R-0
15R-0
32K15R-0
32Z111-000
32Z114-000
32A11
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32K72
Abstract: 32A11 32K621-K00
Text: SERIES SMA Series SMA Serie SMA Precision coaxial connector for microwave applications. The maximum fre quency is 24 GHz, recommended frequency range up to 18 GHz. SMA connectors satisfy high quality standards and are characterized by high reliability, high mechanical stability, long life, and optimum electrical prop
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32K621-K00S3
D-84526
32S15R-0
32Z114-OOOD3
32K72
32A11
32K621-K00
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SiS5511
Abstract: No abstract text available
Text: SÌS5511 PCI/ISA Cache Memory Controller 2.11 Pin Assignment and Description 2.11.1 Pin Assignment 0a1 hj tJt 1001 101 CASEOSCASE 1#CASE2#' CASE3#— I CASE4#- 1 GND—I 156 155 5 CASES#— C ASE«CASE7#— 10 VCC35CASOO#CAS01#— C A S0 2 # GND15 C A S0 3 # CAS04#-CAS05#
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S5511
-HA11
VCC35CASOO
CAS01
GND15
CAS04
-CAS05#
CAS06
CAS07
MAOOVCC35MA1MA2O
SiS5511
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Untitled
Abstract: No abstract text available
Text: Ï Ï V E R T R A U L IC H B e m e rk u n g e n N IC H T VERMASSTE KANTEN -P ro d u k ts p e z i f i k a t i on Ln N cn Oi OJ cn - P r Q fv o r r i c h tu n g s B e s te ll N r. 50 - V e r a r b e / tu n g 70 8 -7 8 0 2 7 -0 N r .9 0 -2 4 4 S IN D N IC H T M A ß S T Ä B LIC H
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nderungsm11
AMP-EN-555
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potentiometer vishay draloric 61
Abstract: draloric cermet potentiometer draloric Potentiometer potentiometer draloric 61 MAL Potentiometer D13CF1 potentiometer draloric vishay draloric Potentiometer vishay draloric Potentiometer 10 D13CF2
Text: Drehwiderstand VISHAY/DRALORIC Rotary potentiometer Keramik/Cermet Keramik/Kohle . kQE o Elektrische Daten Ceramic/Cermet Ceramic/Carbon • T D o n n t i o o o ü m b hgs Electrical data D 13 C. 61 C. D 13 K. (61 H.) Widerstandsschicht Resistive element
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26K10
Abstract: No abstract text available
Text: SERIES FME Serie FME Series FME Compact miniature coaxial connector developed for mobile applications in | M iniaturisierte koaxiate Steckverbindung speziell fu r m obile Einsatzfaiie in Fahrzeugen. vehicles. I The basic element is a cable jack, whose small diameter simplifies the
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156K00A1
26S2S6-S00A1
D-84526
26S153-SOOA1
154-S00
26S187-SOOA1
26K10
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TRANSISTOR S1A 64
Abstract: transistor tic 2250
Text: Q a v a n tek UTO/UTC/PPA 1006 Series Thin-Film Cascadable Amplifier 5 to 1000 MHz FEA TURES A PPLICATIO NS • F requency Range: 5 to 1000 MHz • IF/RF Am plification • High Dynam ic Range • O utput Pow er: +18.5 dBm Typ • N oise Figure: 4.8 dB (Typ)
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S490A
Abstract: 2SB798 2SD999
Text: 5 s— S • 5 /— K NEC ' > 1 h =7 Silicon T ra n s is to r 2SB798 mm a & v t, ij-ty m m , h ^ c o f g J l ì i è i b i j f f l i i f t a T t c 0 2SD999 Ì a > 7 °'J X > 9 ') T '" t „ 1.5 + 0.1 T a = 25 °C ) III g n iy 9 9 n v 9 =t V -30 V -y 9 [ S U E
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2SD999
OT-89)
PWS10
CycleS50
S490A
2SB798
2SD999
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