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    Pin diode G4S

    Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
    Text: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181


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    PDF BAR63. BAR63-04W BAR63-05W BAR63-06W VSO05561 EHA07181 EHA07179 EHA07187 Pin diode G4S BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s

    VSO05561

    Abstract: A7s marking diode
    Text: BAV 99W Silicon Switching Diode Array 3  For high-speed switching applications  Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV 99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT-323 Maximum Ratings Parameter Symbol


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    PDF VSO05561 EHA07181 OT-323 Oct-08-1999 EHB00078 EHB00075 VSO05561 A7s marking diode

    BAV99T

    Abstract: SC75
    Text: BAV99T Silicon Switching Diode 3 • For high-speed switching applications • Connected in series 2 C1/A2 3 1 1 2 A1 C2 VPS05996 EHA07181 Type Marking BAV99T A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage


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    PDF BAV99T VPS05996 EHA07181 Jun-29-2001 EHB00078 EHB00075 BAV99T SC75

    bav99w A7S

    Abstract: BAV99W VSO05561
    Text: BAV99W Silicon Switching Diode Array 3  For high-speed switching applications  Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage


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    PDF BAV99W VSO05561 EHA07181 OT323 Aug-20-2001 EHB00078 EHB00075 bav99w A7S BAV99W VSO05561

    SC-75

    Abstract: VPS05996
    Text: BAV 99T Silicon Switching Diode Preliminary data 3 • For high-speed switching applications • Common cathode 2 C1/A2 3 1 1 2 A1 C2 VPS05996 EHA07181 Type Marking BAV 99T A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SC-75 Maximum Ratings Parameter


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    PDF VPS05996 EHA07181 SC-75 Oct-08-1999 EHB00078 EHB00075 SC-75 VPS05996

    BAT15-04W

    Abstract: VSO05561 S8s marking
    Text: BAT15-04W Silicon Schottky Diode Preliminary data 3  DBS mixer applications up to 12 GHz  Low noise figure  Low barrier type 2 1 VSO05561 C1/A2 3 1 2 A1 C2 EHA07181 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    PDF BAT15-04W VSO05561 EHA07181 OT323 EHD07082 Jul-06-2001 BAT15-04W VSO05561 S8s marking

    15-04W

    Abstract: VSO05561 marking s8s 1504w
    Text: BAT 15-04W Silicon Schottky Diode Preliminary data 3 • DBS mixer applications up to 12 GHz • Low noise figure • Low barrier type 2 1 VSO05561 C1/A2 3 1 2 A1 C2 EHA07181 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


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    PDF 5-04W VSO05561 EHA07181 OT-323 EHD07082 Oct-07-1999 15-04W VSO05561 marking s8s 1504w

    DIODE marking A2 SCD80

    Abstract: BAR63-02W BAR63-02L BAR63-02V BAR63
    Text: BAR63. Silicon PIN Diodes  PIN diode for high speed switching of RF signals  Very low forward resistance low insertion loss  Very low capacitance (high isolation)  For frequencies up to 3GHz BAR63-02. BAR63-03W 1 BAR63-04 BAR63-04W BAR63-04S BAR63-05


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    PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-04S BAR63-05 BAR63-05W BAR63-06 BAR63-06W DIODE marking A2 SCD80 BAR63-02W BAR63-02L BAR63-02V BAR63

    Untitled

    Abstract: No abstract text available
    Text: BAR 64 . W 3 Silicon PIN Diode  High voltage current controlled RF resistor for RF attenuator and switches 2  Frequency range above 1MHz  Low resistance and short carrier lifetime 1  For frequencies up to 3GHz BAR 64-04W BAR 64-05W VSO05561 BAR 64-06W


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    PDF 4-04W 4-05W VSO05561 4-06W EHA07181 EHA07187 EHA07179 OT-323

    Pin diode G4S

    Abstract: VSO05561
    Text: BAR 63 . W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W C1/A2 3 BAR 63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1


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    PDF 3-04W 3-05W 3-06W VSO05561 EHA07181 EHA07179 EHA07187 OT-323 Pin diode G4S VSO05561

    BAR64

    Abstract: BAR64-04W BAR64-05W BAR64-06W VSO05561
    Text: BAR64.W 3 Silicon PIN Diode  High voltage current controlled RF resistor for RF attenuator and switches 2  Frequency range above 1 MHz up to 3 GHz  Low resistance and long carrier lifetime 1  Very low capacitance at zero volts reverse VSO05561 bias at frequencies above 1 GHz


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    PDF BAR64. VSO05561 BAR64-04W BAR64-05W BAR64-06W EHA07181 EHA07187 EHA07179 OT323 BAR64 BAR64-04W BAR64-05W BAR64-06W VSO05561

    VSO05561

    Abstract: No abstract text available
    Text: BAR 64 . W Silicon PIN Diode 3  High voltage current controlled RF resistor for RF attenuator and switches  Frequency range above 1 MHz  Low resistance and short carrier lifetime 2  For frequencies up to 3 GHz 1 BAR 64-04W BAR 64-05W C1/A2 3 BAR 64-06W


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    PDF 4-04W 4-05W 4-06W VSO05561 EHA07181 EHA07179 EHA07187 OT-323 VSO05561