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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9205H Rev. 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9205HR3 MRFE6S9205HSR3 Designed for broadband commercial and industrial applications with


    Original     		PDF MRFE6S9205H MRFE6S9205HR3 MRFE6S9205HSR3 MRFE6S9205HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 1, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRFE6S9060N MRFE6S9060NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1315N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1315NR1 Designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MMRF1315N MMRF1315NR1 IS--95 7/2014Semiconductor,

    2595MHz

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S27130H Rev. 2, 3/2011 RF Power Field Effect Transistors MRF7S27130HR3 MRF7S27130HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to


    Original     		PDF MRF7S27130H MRF7S27130HR3 MRF7S27130HSR3 2595MHz

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 0, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRFE6S9060N MRFE6S9060NR1

    465B

    Abstract: A114 A115 AN1955 JESD22 MRFE6S9205HR3 MRFE6S9205HSR3 EKME630ELL471MK255 Nippon capacitors Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9205H Rev. 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9205HR3 MRFE6S9205HSR3 Designed for broadband commercial and industrial applications with


    Original     		PDF MRFE6S9205H MRFE6S9205HR3 MRFE6S9205HSR3 MRFE6S9205HR3 465B A114 A115 AN1955 JESD22 MRFE6S9205HSR3 EKME630ELL471MK255 Nippon capacitors Nippon chemi

    ALT1110

    Abstract: MRFE6S9060N ATC700a MRFE6S9060NR1 A113 A114 A115 AN1955 ATC100B470JT500XT C101
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 1, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRFE6S9060N MRFE6S9060NR1 ALT1110 MRFE6S9060N ATC700a MRFE6S9060NR1 A113 A114 A115 AN1955 ATC100B470JT500XT C101

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF7S27130HR3 MRF7S27130HSR3 J1567 2595MHz ATC100B3R0BT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S27130H Rev. 0, 9/2007 RF Power Field Effect Transistors MRF7S27130HR3 MRF7S27130HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to


    Original     		PDF MRF7S27130H MRF7S27130HR3 MRF7S27130HSR3 MRF7S27130HR3 A114 A115 AN1955 C101 JESD22 MRF7S27130HSR3 J1567 2595MHz ATC100B3R0BT500XT