FLM2527L-20F
Abstract: Eudyna Devices power amplifiers Eudyna Devices X BAND power amplifiers
Text: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package
|
Original
|
FLM2527L-20F
FLM2527L-20F
Volt4888
Eudyna Devices power amplifiers
Eudyna Devices X BAND power amplifiers
|
PDF
|
FLL410IK-4C
Abstract: ED-4701 eudyna GaAs FET Eudyna Devices power amplifiers
Text: FLL410IK-4C L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm Typ. ・High Gain: GL=11.5dB(Typ.) ・High PAE: ηadd=44%(Typ.) ・Broad Band: 3.4~3.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is
|
Original
|
FLL410IK-4C
FLL410IK-4C
ED-4701
eudyna GaAs FET
Eudyna Devices power amplifiers
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FSX027WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz High Power Gain: G1dB=10dB(Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX027WF is a general purpose GaAs FET designed for medium
|
Original
|
FSX027WF
FSX027WF
12GHz.
|
PDF
|
L-Band
Abstract: 842 FET
Text: FLL600IQ-2 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which
|
Original
|
FLL600IQ-2
FLL600IQ-2
L-Band
842 FET
|
PDF
|
Eudyna Devices power amplifiers
Abstract: eudyna GaAs FET Amplifier FLL1200IU-2 Eudyna high power
Text: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that
|
Original
|
FLL1200IU-2
FLL1200IU-2
t4888
Eudyna Devices power amplifiers
eudyna GaAs FET Amplifier
Eudyna high power
|
PDF
|
Eudyna Packaging
Abstract: No abstract text available
Text: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
|
Original
|
FHX13LG,
FHX14LG
12GHz
FHX13)
FHX14LG
2-18GHz
Eudyna Packaging
|
PDF
|
eudyna GaAs FET RF Transistor
Abstract: No abstract text available
Text: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor
|
Original
|
FHX13X,
FHX14X
12GHz
FHX13)
12GHz
FHX14X
2-18GHz
eudyna GaAs FET RF Transistor
|
PDF
|
FLL1500IU-2C
Abstract: imt 901 FLL1500
Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that
|
Original
|
FLL1500IU-2C
FLL1500IU-2C
imt 901
FLL1500
|
PDF
|
601 121
Abstract: FLL800IQ-2C
Text: FLL800IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 80W Typ. High PAE: 50% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that
|
Original
|
FLL800IQ-2C
FLL800IQ-2C
601 121
|
PDF
|
FLL1500IU-2C
Abstract: eudyna GaAs FET Amplifier
Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that
|
Original
|
FLL1500IU-2C
FLL1500IU-2C
eudyna GaAs FET Amplifier
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility
|
Original
|
FHX04X,
FHX05X,
FHX06X
12GHz
FHX04)
FHX06X
2-18GHz
|
PDF
|
FSX027WF
Abstract: fsx027w
Text: FSX027WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz High Power Gain: G1dB=10dB(Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX027WF is a general purpose GaAs FET designed for medium
|
Original
|
FSX027WF
FSX027WF
12GHz.
Powe4888
fsx027w
|
PDF
|
GaAs FET HEMT Chips
Abstract: FHX35 FHX35X eudyna GaAs FET RF Transistor
Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended
|
Original
|
FHX35X
12GHz
FHX35X
2-18GHz
Pow4888
GaAs FET HEMT Chips
FHX35
eudyna GaAs FET RF Transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FLL600IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 51% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that
|
Original
|
FLL600IQ-2C
FLL600IQ-2C
|
PDF
|
|
|
eudyna GaAs FET Amplifier
Abstract: FLL2400IU-2C Eudyna Devices
Text: FLL2400IU-2C L-Band High Power GaAs FET FEATURES • • • • Push-Pull Configuration High Power Output: 240W Typ. Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL2400IU-2C is a 240 Watt GaAs FET that employs a push-pull design that
|
Original
|
FLL2400IU-2C
FLL2400IU-2C
eudyna GaAs FET Amplifier
Eudyna Devices
|
PDF
|
eudyna GaAs FET RF Transistor
Abstract: high frequency transistor ga as fet transistor on 4959 eudyna fet
Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor
|
Original
|
FHX45X
12GHz
FHX45X
2-18GHz
eudyna GaAs FET RF Transistor
high frequency transistor ga as fet
transistor on 4959
eudyna fet
|
PDF
|
FLL1200IU-2
Abstract: No abstract text available
Text: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that
|
Original
|
FLL1200IU-2
FLL1200IU-2
t4888
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FMM5052ZE MMIC Power Amplifier FEATURES • Wide Frequency Band: 0.8 to 2.7GHz • Medium Power: P1dB=26dBm Typ. @ f=0.8 - 2.7GHz • High Linear Gain: GL=19dB (Typ.) @ f=0.8 - 2.7GHz • Impedance Matched Zin/Zout = 50Ω • Wide Operating Temperature Range
|
Original
|
FMM5052ZE
26dBm
SSOP-16
FMM5052ZE
|
PDF
|
FHX04X
Abstract: FHX04 FHX05X FHX06X GaAs FET HEMT Chips hemt low noise die
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility
|
Original
|
FHX04X,
FHX05X,
FHX06X
12GHz
FHX04)
FHX06X
2-18GHz
FHX04X
FHX04
FHX05X
GaAs FET HEMT Chips
hemt low noise die
|
PDF
|
fujitsu hemt
Abstract: No abstract text available
Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
|
Original
|
FSX017X
FSX017X
12GHz.
fujitsu hemt
|
PDF
|
L-Band
Abstract: FLL410IK-3C
Text: FLL410IK-3C L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm Typ. ・High Gain: GL=13.0dB(Typ.) ・High PAE: ηadd=52%(Typ.) ・Broad Band: 2.5~2.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is
|
Original
|
FLL410IK-3C
FLL410IK-3C
L-Band
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended
|
Original
|
FHX35X
12GHz
FHX35X
2-18GHz
|
PDF
|
FHX04LG
Abstract: FHX04 FHX05LG FHX06LG low noise hemt 2-18G 12GAS
Text: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
|
Original
|
FHX04LG,
12GHz
FHX04)
FHX05LG,
FHX06LG
2-18GHz
FHX04LG
FHX04
FHX05LG
low noise hemt
2-18G
12GAS
|
PDF
|
FLL600IQ-3
Abstract: No abstract text available
Text: FLL600IQ-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W High PAE: 43%. Broad Frequency Range: 2000 to 2700 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that
|
Original
|
FLL600IQ-3
FLL600IQ-3
hig4888
|
PDF
|
