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    F 20N60A Search Results

    F 20N60A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM2917MX/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85 Visit Texas Instruments Buy
    LM2907MX/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85 Visit Texas Instruments Buy
    LM2917M/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85 Visit Texas Instruments Buy
    LM2907M/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85 Visit Texas Instruments Buy
    LM2917N-8/NOPB Texas Instruments Frequency to Voltage Converter 8-PDIP -40 to 85 Visit Texas Instruments Buy

    F 20N60A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    50n50c

    Abstract: 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60
    Text: Preliminary data HiPerFASTTM IGBT VCES IXGH 50N50B IXGH 50N60B IC25 VCE sat 500 V 75 A 600 V 75 A tfi 2.3 V 100 ns 2.5 V 120 ns TO-247 AD C (TAB) Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 50N50B 50N60B O-247 50N50 50N60 IXGH24N50BU1 IXGH24N60BU1 50n50c 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60

    IXGH20N60AU1

    Abstract: IXGH20N60U1 20N60AU1 *GH20N60AU1
    Text: Low VCE sat IGBT with Diode High speed IGBT with Diode VCES Combi Packs IXGH 20 N60U1 600 V IXGH 20 N60AU1 600 V Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient


    Original     		PDF N60U1 N60AU1 O-247 IXGH20N60U1 IXGH20N60AU1 IXGH20N60AU1 IXGH20N60U1 20N60AU1 *GH20N60AU1

    20N60A

    Abstract: f 20n60a N60A 20N60 20N60AU1 IXGH 20 N60A 30NC60 igbt 20n60
    Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 40 A IC90


    Original     		PDF 20N60 20N60A O-204AE 20N60 20N60A 20N60U1 20N60AU1 f 20n60a N60A IXGH 20 N60A 30NC60 igbt 20n60

    20N60A

    Abstract: 20n60 ixgh 1500 20N60 datasheet 20n60 G N60A 20N60AU MJ 900# f 20n60a
    Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 40 A I C90


    Original     		PDF 20N60 20N60A O-204AE 20N60 20N60A 20N60U1 20N60AU1 ixgh 1500 20N60 datasheet 20n60 G N60A 20N60AU MJ 900# f 20n60a

    IGBT 20N60

    Abstract: 20N60 20N60A 20n60 igbt N60A 20n60 G IXSM20N60A MJ1000
    Text: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF O-247 20N60 20N60A O-204AE IGBT 20N60 20N60 20N60A 20n60 igbt N60A 20n60 G IXSM20N60A MJ1000

    20n60a40

    Abstract: 20N60A 20N60 20N60A9 igbt 20n60
    Text: Not for new designs Low VCE sat IGBT High Speed IGBT IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF O-247 O-204 O-204AE 20N60 20N60A 20N60U1 20N60AU1 20n60a40 20N60A9 igbt 20n60

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    20N60U1

    Abstract: 20N60AU1 N60AU1
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR


    Original     		PDF N60U1 N60AU1 20N60U1 20N60AU1 20N60U1 20N60AU1 N60AU1

    20N60AU1

    Abstract: ixgh 1500 IXGH20N60U1 ixgh20N60AU1
    Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 20 N60U1 IXGH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF N60U1 N60AU1 20N60U1 20N60AU1 20N60AU1 ixgh 1500 IXGH20N60U1 ixgh20N60AU1

    20N60A

    Abstract: D-68623 20N60U1 20N60AU
    Text: Not for new designs Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF N60U1 N60AU1 D-68623 20N60U1 20N60AU1 20N60A 20N60U1 20N60AU

    40n60 transistor

    Abstract: 30N60 40n60 30N60A 40n60 igbt 17N10 wiom DC transistor JE 1090 20N60A igbt equivalent to 40n60
    Text: MbE D • Mb S b S E b OO O O S T M T «IXY I X V S CORP T □IX Y S I V I S Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features • • • Guaranteed Short Circuit Capability SCSOA Optimized for 60Hz to 30kHz Switching


    OCR Scan     		PDF 1560A 30kHz IXSH20N60 IXSM20N60 Tj-125 40n60 transistor 30N60 40n60 30N60A 40n60 igbt 17N10 wiom DC transistor JE 1090 20N60A igbt equivalent to 40n60

    12n60u

    Abstract: sta 750 tic 263a
    Text: , IGBT with Diode Combi Pack G series with high gain type VCES .Tjm= 1:S0oO ► New : >• >>>> ► ► ► ► ► IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH


    OCR Scan     		PDF

    KYS 30 40 diode

    Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
    Text: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching


    OCR Scan     		PDF 30kHz 1560A 4bflb55b Q000S1S IXSH20N60 IXSM20N60 KYS 30 40 diode 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


    OCR Scan     		PDF CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B

    IXGH20N60U1

    Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB
    Text: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package


    OCR Scan     		PDF 1750A 30KHz T-39-15 IXGH10N60U1 IXGH10N60AU1 IXGH20N60U1 IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB

    Untitled

    Abstract: No abstract text available
    Text: Not for new designs Low V IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 Combi Packs v CES ^C25 VC E sat 600 V 600 V 40 A 40 A 2.5 V 3.0 V <?C G Short Circuit S O A Capability OE Symbol Test Conditions VCES ^ v CGR Maximum Ratings


    OCR Scan     		PDF N60U1 N60AU1 O-247 4hflb22b 20N60U1 20N60AU1

    20N60AU

    Abstract: 20N60A g20n60 N60A 20N60 30 N60A bt 151 600 20n60 G LT0B igbt 20n60
    Text: Not for new designs IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A Low VCE sat IGBT High Speed IGBT VC E S ^C25 Vy C E (sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability §Symbol Test Conditions VCES Tj v v v Maximum Ratings = 25°C to 150°C 600 V


    OCR Scan     		PDF O-247 T0-204AE 20N60AU 20N60A g20n60 N60A 20N60 30 N60A bt 151 600 20n60 G LT0B igbt 20n60

    IXGH20N60AU1

    Abstract: N60A *GH20N60AU1 20N60AU 20N60
    Text: 600 V 600 V 40 A 40 A CO iO, LU ^C25 O IXGH 20 N60U1 IXGH 20 N60AU1 > Low VrP, n IGBT with Diode CE sat High speed IGBT with Diode v CES 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 MQ


    OCR Scan     		PDF IXGH20 N60U1 IXGH20N60AU1 O-247 4bflb22b 20N60U1 20N60AU1 N60A *GH20N60AU1 20N60AU 20N60

    Untitled

    Abstract: No abstract text available
    Text: IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Low VCE sat IGBT High speed IGBT Maximum Ratings Symbol Test Conditions VCES T j = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 Mi2 600 V v GES Continuous ±20 V VGEM T ransient ±30 V U25 Tc = 25°C 40 A ^C90


    OCR Scan     		PDF O-247 DDD3S72

    mm036

    Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
    Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA


    OCR Scan     		PDF DSAI35-12A 5-16A 5-18A 5-12A 2-06A 12-1OA 2-12A 2x30-Q4C mm036 ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100

    Untitled

    Abstract: No abstract text available
    Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62


    OCR Scan     		PDF 20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â

    40n80

    Abstract: IXGH40N60 38N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A
    Text: Insulated Gate Bipolar Transistors IGBT 4^ r/ioei fType VCE(sat) max. Cto. typ. typ. A V pF pP 20 40 40 50 76 75 75 10 20 31 30 38 40 60 2.5 2.5 1.8 2.5 1.8 2.5 1.8 750 1500 1500 2800 2500 4500 4000 30 40 40 70 70 60 100 20 34 50 10 17 25 3.5 750 1500 2750


    OCR Scan     		PDF 10N60 20N60 31N60 30N60 38N60 40N60 60N60 10N100 17N100 25N100 40n80 IXGH40N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A