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Diodes Incorporated DF08S-T BRIDGE RECT 1PHASE 800V 1A DF-S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DF08S-T	Cut Tape	68,009		1	1 $0.74 10 $0.46 100 $0.74 1000 $0.22618 10000 $0.22618	Buy Now
	DF08S-T	Digi-Reel	68,009		1	1 $0.74 10 $0.46 100 $0.74 1000 $0.22618 10000 $0.22618	Buy Now
	DF08S-T	Reel	67,000		1,500	1 - 10 - 100 - 1000 - 10000 $0.15581	Buy Now
Avnet Americas	DF08S-T	Reel		8 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 $0.12497	Buy Now
Mouser Electronics	DF08S-T		9,291			1 $0.58 10 $0.393 100 $0.269 1000 $0.197 10000 $0.166	Buy Now
Newark	DF08S-T	Cut Tape	1,125		5	1 $0.414 10 $0.365 100 $0.272 1000 $0.233 10000 $0.233	Buy Now
Bristol Electronics	DF08S-T		2,361			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	DF08S-T		1,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

TME	DF08S-T		1,387		1	1 $0.38 10 $0.314 100 $0.197 1000 $0.192 10000 $0.192	Buy Now
Avnet Asia	DF08S-T			8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.13462	Buy Now
Avnet Silica	DF08S-T		12,000	10 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	DF08S-T		42,000		1	1 - 10 - 100 - 1000 - 10000 $0.1886	Buy Now
United Chemi-Con Inc APSE6R3ELL561MF08S CAP ALUM POLY 560UF 20% 6.3V TH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APSE6R3ELL561MF08S	Bulk	9,280		1	1 $0.56 10 $0.333 100 $0.2162 1000 $0.15443 10000 $0.12937	Buy Now
Mouser Electronics	APSE6R3ELL561MF08S		5,446			1 $0.53 10 $0.244 100 $0.217 1000 $0.168 10000 $0.168	Buy Now
PUI	APSE6R3ELL561MF08S		5,000	22 Weeks	1,000	1 - 10 - 100 - 1000 $0.152 10000 $0.112	Buy Now
Master Electronics	APSE6R3ELL561MF08S		15,000			1 - 10 - 100 - 1000 $0.1932 10000 $0.1117	Buy Now
United Chemi-Con Inc APSG160ELL271MF08S CAP ALUM POLY 270UF 20% 16V TH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APSG160ELL271MF08S	Bulk	5,246		1	1 $0.54 10 $0.327 100 $0.2164 1000 $0.15875 10000 $0.15875	Buy Now
Richardson RFPD	APSG160ELL271MF08S				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mallory Sonalert Products Inc PSR-50F08S-JQ SPEAKER 8OHM 250MW TOP PORT 91DB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PSR-50F08S-JQ	Bulk	2,691		1	1 $1.49 10 $1.216 100 $1.1108 1000 $1.1108 10000 $1.1108	Buy Now
Sager	PSR-50F08S-JQ				1	1 $2.61 10 $2.61 100 $2.61 1000 $1.69 10000 $1.36	Buy Now
United Chemi-Con Inc APSF2R0ELL102MF08S CAP ALUM POLY 1000UF 20% 2V TH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APSF2R0ELL102MF08S	Bulk	1,085		1	1 $1.22 10 $0.761 100 $0.5181 1000 $0.38909 10000 $0.33663	Buy Now
Richardson RFPD	APSF2R0ELL102MF08S				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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F08S Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
F08S60S Abstract: No abstract text available Text: F08S60S Stealth2 Diode tm Features 8A, 600V Stealth2 Diode • High Speed Switching Max. trr<30ns @ IF=8A The F08S60S is stealth rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial	Original	FFPF08S60S F08S60S	PDF
GAAS FET AMPLIFIER for optical receiver Abstract: transimpedance amplifier F0100504B F0321818M F0832483T FET differential amplifier circuit Text: F0100504B 3.3V/5V 2.5Gbps Transimpedance Amplifier 02.09.02 Features F0100504B - 2.2kΩ high transimpedance - 29dB gain 3.3V/5V 2.5Gb/s NRZ Receiver - Low noise typ.6pΑ/√Ηz@100MHz Transimpedance Amplifier - Typical 1900MHz O/E Bandwidth - Over 25dB wide dynamic range	Original	F0100504B 100MHz) 1900MHz OC-48/STM-16 F0100504B OC-48/STM-16, MIL-STD-883C GAAS FET AMPLIFIER for optical receiver transimpedance amplifier F0321818M F0832483T FET differential amplifier circuit	PDF
Untitled Abstract: No abstract text available Text: STEALTH II Rectifier FFP08S60S tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 30ns @ IF=8A • High Reverse Voltage and High Reliability The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.	Original	FFP08S60S FFP08S60S	PDF
F08S60ST Abstract: No abstract text available Text: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.	Original	FFPF08S60ST FFPF08S60ST F08S60ST	PDF
f08s60sn Abstract: diode 8a 600v ffpf08s60sn FFPF08S60SNTU Text: STEALTHTM II Rectifier F08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The F08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.	Original	FFPF08S60SN FFPF08S60SN f08s60sn diode 8a 600v FFPF08S60SNTU	PDF
f08s60 Abstract: F08S60S FFD08S60S Text: STEALTHTM II Rectifier FFD08S60S_F085 Features 8A, 600V Stealth2 Rectifier High Speed Switching Max. trr<30ns @ IF = 8A The FFD08S60S_F085 is stealth 2 rectifier with soft High Reverse Voltage and High Reliability RoHS Compliant recovery characteristics (trr<30ns). They has half the	Original	FFD08S60S f08s60 F08S60S	PDF
f08s60sn Abstract: TT2202 2202L FFP08S60SNTU f08s60 Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.	Original	FFP08S60SN FFP08S60SN f08s60sn TT2202 2202L FFP08S60SNTU f08s60	PDF
Untitled Abstract: No abstract text available Text: STEALTHTM II Rectifier FFD08S60S_F085 Features 8A, 600V Stealth2 Rectifier ̈ High Speed Switching Max. trr<30ns @ IF = 8A The FFD08S60S_F085 is stealth 2 rectifier with soft ̈ ̈ High Reverse Voltage and High Reliability ̈ RoHS Compliant recovery characteristics (trr<30ns). They has half the	Original	FFD08S60S	PDF
F08S60ST Abstract: FFPF08S60STTU Text: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.	Original	FFPF08S60ST FFPF08S60ST F08S60ST FFPF08S60STTU	PDF
PREAMPLIFIER TRANSIMPEDANCE optic fet Abstract: F0100406B amplifier transimpedance TRANSIMpedance Amplifier F0100504B F0321818M F0831252T F0832483T F0100406 Text: F0100406B 3.3V 1.25Gbit/s Transimpedance Amplifier 03.05.27 Features F0100406B - 5kΩ high transimpedance - 30dB high gain 3.3V 1.25Gbit/s NRZ Receiver - Low noise typ.3.5pΑ/√Ηz@100MHz Transimpedance Amplifier - Typical 900MHz O/E Bandwidth - Over 30dB wide dynamic range	Original	F0100406B 25Gbit/s 100MHz) 900MHz 25Gbit/s) F0100406B 25Gbit/s MIL-STD-883C PREAMPLIFIER TRANSIMPEDANCE optic fet amplifier transimpedance TRANSIMpedance Amplifier F0100504B F0321818M F0831252T F0832483T F0100406	PDF
diode 8a 600v Abstract: diode T B 8A Text: FFP08S60S tm 8A, 600V, STEALTH II Diode Features • Stealth recovery Trr = 30 ns @ IF = 8 A The FFP08S60S is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as	Original	FFP08S60S FFP08S60S O-220-2L diode 8a 600v diode T B 8A	PDF
agc ic Abstract: No abstract text available Text: F0100406B 3.3V 1.25Gbit/s Transimpedance Amplifier 03.05.27 Features F0100406B - 5kΩ high transimpedance - 30dB high gain 3.3V 1.25Gbit/s NRZ Receiver - Low noise typ.3.5pΑ/√Ηz@100MHz Transimpedance Amplifier - Typical 900MHz O/E Bandwidth - Over 30dB wide dynamic range	Original	F0100406B 25Gbit/s 100MHz) 900MHz 25Gbit/s) F0100406B MIL-STD-883C agc ic	PDF
Untitled Abstract: No abstract text available Text: STEALTHTM II Rectifier F08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The F08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.	Original	FFPF08S60SN FFPF08S60SN	PDF
f08s60sn Abstract: TT2202 TT220 F08S f08s60 Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.	Original	FFP08S60SN FFP08S60SN f08s60sn TT2202 TT220 F08S f08s60	PDF

f08s60sn Abstract: diode 8a 600v Text: FFP08S60SN tm 8A, 600V, STEALTH II Diode Features • Stealth recovery Trr = 25 ns @ IF = 8 A • Max Forward Voltage, VF = 3.4 V (@ TC = 25°C) The FFP08S60SN is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted	Original	FFP08S60SN FFP08S60SN f08s60sn diode 8a 600v	PDF
Untitled Abstract: No abstract text available Text: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.	Original	FFPF08S60ST FFPF08S60ST	PDF
Untitled Abstract: No abstract text available Text: F08S60S 8 A, 600 V, STEALTH II Diode Features Description • Stealth Recovery trr = 30 ns @ IF = 8 A The F08S60S is STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as	Original	FFPF08S60S FFPF08S60S	PDF
FFP08S60S Abstract: FFP08S60STU F08S60S Text: FFP08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth2 Rectifier • High Speed Switching Max. trr<30ns @ IF=8A The FFP08S60S is stealth 2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial	Original	FFP08S60S FFP08S60S FFP08S60STU F08S60S	PDF
marking code maxim label Abstract: No abstract text available Text: P roduct S h ír c a t io n s Integrated C ircuitsQoup LH28F008SftR-85 8M F]ash M em o ry 1M fc8 H o d elN o IÜ F08S50) Spec No. : EL105019 Issue D ate: A u g u s t3 1 ,1 9 9 8 SHARP F08S50 # H a n d le this document carefully for it contains material protected by international	OCR Scan	LH28F008SftR-85 F08S50) EL105019 LHF08S50 LH28F008SAR-85 marking code maxim label	PDF
Untitled Abstract: No abstract text available Text: SHARP February 1997 FLASH MEMORY LH28F008SAHR-85 Ver. 2.0E SHARP CORPORATION Engineering Department 2 Flash Memory Development Center Tenri Integrated Circuits 1C Group I L HF 0 8 S 1 6 1 CONTENTS 1 FEATURES 2 2 PRODUCT OVERVIEW 3 3 PRINCIPLES OF OPERATION	OCR Scan	LH28F008SAHR-85	PDF
386SL Abstract: E0000 LH28F008SA LH28F008SAT-85 LHF08S49 Text: P l« m T S M < 1 1 1 C W i\S liuca;io.l Iranf- Croup LH28FD08SAJ-85 8M Rash Memory (Model No.: F08S49 Spec No.: EL105017 Issue Date: August 31, 1998 SHARP F08S49 • H a n d le this document carefully for it contains material protected by international	OCR Scan	LH28F008SAT-85 LHF08S49) BJ05017 LHF08S49 386SL E0000 LH28F008SA LH28F008SAT-85	PDF
80386SL microprocessor features Abstract: 82360SL 80386sl intel 80386SL AH 36 Text: I LHF 0 8 S 1 6 LH28F008SAHR-85 8 MBIT 1 MBIT x 8 FLASH MEMORY 1. FEATURES •High-Density Symmetrically Blocked Architec ture - Sixteen 64 KByte Blocks • Very High-Performance Read - 85 ns Maximum Access Time • SRAM-Compatible Write Interface •Extended Cycling Capability	OCR Scan	LH28F008S 40-Lead 80386SL microprocessor features 82360SL 80386sl intel 80386SL AH 36	PDF
1N5498 Abstract: CA542 AP6KE91A CGJ-1 DF06S 214 H AG 48 2KBP10M I1404 P6KE200 602 CA-592 BZWO4P Text: NUMERICAL INDEX 1.5KA6.8.A .564 1.5KE22C.CA. 592 1.5KE170.A. 592 1N4383GP. 1.5KA7.5.A.564 1.5KE24.A.592 1ÆKE170C.CA.592 1N4384GP.244	OCR Scan	5KA10 5KA11 5KA12 5KA13 5KA15 5KA16 5KA18 5KA20 5KA22 5KA24 1N5498 CA542 AP6KE91A CGJ-1 DF06S 214 H AG 48 2KBP10M I1404 P6KE200 602 CA-592 BZWO4P	PDF
F02S Abstract: bd4448 D4148 Text: IIAIEt SURFACE MOUNT SWITCHING DIODES 350 mW SWITCHING DIODES/TO-236 Device Type P eak Reverse Voltage VRM : V V Marking Code : BAS 16 8A V 70 BAV99 B AW 56 BAL99 IM B D 4148 IM B D 4448 A6 JJ JE JD JF A2 A3 O P E R A T IN G /S TO R A G E TE M P E R A TU R E R A N G E -65°C to +175°C	OCR Scan	DIODES/TO-236 BAV99 BAL99 DF005S DF04S SDF01 F02S bd4448 D4148	PDF

F08S Search Results

F08S Price and Stock

Diodes Incorporated DF08S-T

United Chemi-Con Inc APSE6R3ELL561MF08S

United Chemi-Con Inc APSG160ELL271MF08S

Mallory Sonalert Products Inc PSR-50F08S-JQ

United Chemi-Con Inc APSF2R0ELL102MF08S

F08S Datasheets Context Search

F08S60S

GAAS FET AMPLIFIER for optical receiver

Untitled

F08S60ST

f08s60sn

f08s60

f08s60sn

Untitled

F08S60ST

PREAMPLIFIER TRANSIMPEDANCE optic fet

diode 8a 600v

agc ic

Untitled

f08s60sn

f08s60sn

Untitled

Untitled

FFP08S60S

marking code maxim label

Untitled

386SL

80386SL microprocessor features

1N5498

F02S