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    F08S60SN Search Results

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    F08S60SN Price and Stock

    onsemi FFPF08S60SNTU

    DIODE AVALANCHE 600V 8A TO220F2L
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    DigiKey FFPF08S60SNTU Tube
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    Newark FFPF08S60SNTU Bulk 1
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    Rochester Electronics FFPF08S60SNTU 332 1
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    Fairchild Semiconductor Corporation FFP08S60SN

    RECTIFIER DIODE, 1 PHASE, 1 ELEMENT, 8A, 600V V(RRM), SILICON, TO-220AC (Also Known As: F08S60SN)
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    Quest Components FFP08S60SN 250
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    Fairchild Semiconductor Corporation FFPF08S60SNTU

    600 V, 8 A STEALTH II DIODE Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC
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    ComSIT USA FFPF08S60SNTU 1,000
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    Win Source Electronics FFPF08S60SNTU 58,000
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    F08S60SN Datasheets Context Search

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    f08s60sn

    Abstract: diode 8a 600v ffpf08s60sn FFPF08S60SNTU
    Text: STEALTHTM II Rectifier F08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The F08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFPF08S60SN FFPF08S60SN f08s60sn diode 8a 600v FFPF08S60SNTU PDF

    f08s60sn

    Abstract: TT2202 2202L FFP08S60SNTU f08s60
    Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFP08S60SN FFP08S60SN f08s60sn TT2202 2202L FFP08S60SNTU f08s60 PDF

    Untitled

    Abstract: No abstract text available
    Text: STEALTHTM II Rectifier F08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The F08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFPF08S60SN FFPF08S60SN PDF

    f08s60sn

    Abstract: TT2202 TT220 F08S f08s60
    Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFP08S60SN FFP08S60SN f08s60sn TT2202 TT220 F08S f08s60 PDF

    f08s60sn

    Abstract: diode 8a 600v
    Text: FFP08S60SN tm 8A, 600V, STEALTH II Diode Features • Stealth recovery Trr = 25 ns @ IF = 8 A • Max Forward Voltage, VF = 3.4 V (@ TC = 25°C) The FFP08S60SN is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted


    Original     		FFP08S60SN FFP08S60SN f08s60sn diode 8a 600v PDF

    Untitled

    Abstract: No abstract text available
    Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFP08S60SN FFP08S60SN PDF

    F08S60SN

    Abstract: FFP08S60SNTU FFP08S60SN TO220-2L diode 8a 600v C200300
    Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFP08S60SN FFP08S60SN F08S60SN FFP08S60SNTU TO220-2L diode 8a 600v C200300 PDF