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Rochester Electronics LLC RF1S22N10 N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RF1S22N10	Bulk			342	1 - 10 - 100 - 1000 $0.88 10000 $0.88	Buy Now
Rochester Electronics LLC RF1S22N10SM N-CHANNEL POWER MOSFET
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DigiKey	RF1S22N10SM	Bulk			381	1 - 10 - 100 - 1000 $0.79 10000 $0.79	Buy Now
Harris Semiconductor RF1S22N10 22V, N-Channel POWER MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RF1S22N10		1,990		1	1 $0.8451 10 $0.8451 100 $0.7944 1000 $0.7183 10000 $0.7183	Buy Now
Harris Semiconductor RF1S22N10SM 22V, N-Channel POWER MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RF1S22N10SM		3,853		1	1 $0.7583 10 $0.7583 100 $0.7128 1000 $0.6446 10000 $0.6446	Buy Now

F1S22N10 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
RFP22N10 Abstract: No abstract text available Text: RFP22N10, F1S22N10, F1S22N10SM S E M I C O N D U C T O R 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs April 1998 Features Description • 22A, 100V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature	Original	RFP22N10, RF1S22N10, RF1S22N10SM TA9845. 1-800-4-HARRIS RFP22N10	PDF
RFP22N10 Abstract: RF1S22N10SM RF1S22N10SM9A TB334 Text: RFP22N10, F1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding	Original	RFP22N10, RF1S22N10SM RFP22N10 RF1S22N10SM RF1S22N10SM9A TB334	PDF
RFP22N10 Abstract: No abstract text available Text: RFP22N10, F1S22N10SM Data Sheet Title FP2 10, 1S2 10S bt A, 0V, 80 m, anwer OSTs utho eyrds ter- July 1999 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature	Original	RFP22N10, RF1S22N10SM 175oC TB334 RFP22N10	PDF
RFP22N10 Abstract: RF1S22N10SM RF1S22N10SM9A TB334 F1S22N10 Text: RFP22N10, F1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding	Original	RFP22N10, RF1S22N10SM RFP22N10 RF1S22N10SM RF1S22N10SM9A TB334 F1S22N10	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note	PDF
RFP22N10 Abstract: TB334 RF1S22N10SM RF1S22N10SM9A Text: RFP22N10, F1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding	Original	RFP22N10, RF1S22N10SM RFP22N10 TB334 RF1S22N10SM RF1S22N10SM9A	PDF
RFP22N10 Abstract: No abstract text available Text: RFP22N10, F1S22N10SM i n t e f s i l D a ta S h e e t , 22A, 100V, 0.080 Ohm N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives	OCR Scan	RFP22N10, RF1S22N10SM TA9845. 080C1 RFP22N10	PDF
RFP22N10 Abstract: TA9845 Text: ASSESS? RFP22N10, F1S22N10, F1S22N10SM 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs Aprii 1998 Description Features 22A,100V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti	OCR Scan	RFP22N10, RF1S22N10, RF1S22N10SM O-263AB RF1S22N10SM O-263AB RFP22N10 TA9845	PDF