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    MGF4317D

    Abstract: MGF-4317D MGF4310 MGF4316D MGF4318D 4310D
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310D Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The F4310D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF F4310D MGF4310D 12GHz GF4314D: GF4316D: F4317D: GF4318D: 12GHz 4310D MGF4317D MGF-4317D MGF4310 MGF4316D MGF4318D

    MGF4310

    Abstract: MGF4314D MGF4318D MGF4310D MGF4316D MGF4317D M5M27C102P MGF4317 MGF4318 MGF431
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310D Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The F4310D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGF4310D 12GHz MGF4314D: MGF4316D. MGF4317D: MGF4318D: M5M27C102P RV-15 MGF4310 MGF4314D MGF4318D MGF4316D MGF4317D MGF4317 MGF4318 MGF431