MGF4318 Search Results

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Catalog Datasheet	MFG & Type	Document Tags	PDF
MGF1802 Abstract: mgf431 MGF43180 mitsubishi mgf MGF1902B-65 Text: MGF431OD Series L1~o- o~i -oqof- SUPER LOW NOISE InOaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF431OD series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a	Original	MGF431OD 12GHz MGF4314D: MGF4316D: MGF4317D: MGF4318D: 12GHz MGF4S17D-O1 MGF43I4E45. MGF1802 mgf431 MGF43180 mitsubishi mgf MGF1902B-65	PDF
MRF947T1 equivalent Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi	Original	2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L	PDF
MGF4918D Abstract: MGF4314D MGF4919F MGF4318D MGF4316D MGF4919 MGF4319F MGF4317D MGF-4317D MGF4914D Text: LOW NOISE InGaAs HEMT M G F 4 x x x x Series T y p ic a l C h aracteristics Type MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E MGF4318E MGF4316F MGF4319F MGF4416D MGF4417D MGF4418D MGF4511D MGF4714AP MGF4914D MGF4916D MGF4917D MGF4918D MGF4914E MGF4918E MGF4916F	OCR Scan	GD-16 GD-15 GD-18 MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E12 MGF4918D MGF4919F MGF4919 MGF4319F MGF-4317D MGF4914D	PDF
MGF4919G Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10	OCR Scan	MGF1302 MGF1303B MGF1323 MGF14 MGF1412B MGF1403B MGF1423B MGF1425B MGF1902B MGF1903B MGF4919G MGF4919 MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A	PDF
M52777SP Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30	OCR Scan	2SA1115 2SA1235 2SA1235A 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 M52777SP M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p	PDF
MGF4310 Abstract: MGF4910 MGF4914C MGF4318E-01 MGF4918D MGF4914 MGF4917 MGFC4418 MGFC4416 MGF4318 Text: Die_MGFC4410 SERIES Package MGF4310 SERIES MGF4910 SERIES a ^MITSUBISHI ELECTRONIC DEVICE GROUP D Series - 0.25um X 200um DESCRIPTION “T“ GATE STRUCTURE The super low noise HEMT device family is designed for applications requiring high performance acheiving ultra low noise figures.	OCR Scan	MGFC4410 MGF4310 MGF4910 200um 8E-30 MGF4914E-01 MGF4918E-01 12GHz, MGF4914C MGF4318E-01 MGF4918D MGF4914 MGF4917 MGFC4418 MGFC4416 MGF4318	PDF
MGF4317D Abstract: MGF-4317D MGF4310 MGF4316D MGF4318D 4310D Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310D Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4310D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	F4310D MGF4310D 12GHz GF4314D: GF4316D: F4317D: GF4318D: 12GHz 4310D MGF4317D MGF-4317D MGF4310 MGF4316D MGF4318D	PDF
MGF4310 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F 4310E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to Unit: millimeters (inches) 4 M iN .	OCR Scan	4310E F4319E MGF4310E MGF4314E MGF4318E GF4319E MGF4310	PDF
F4310E Abstract: F4314E mitsubishi application mg series gaas Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F4310E series su per-lo w -n oise HEMT High Electron M o bility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic	OCR Scan	F4310E 4310E F4314E MGF4318E mitsubishi application mg series gaas	PDF
MGF4310 Abstract: MGF4314D MGF4318D MGF4310D MGF4316D MGF4317D M5M27C102P MGF4317 MGF4318 MGF431 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310D Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4310D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	MGF4310D 12GHz MGF4314D: MGF4316D. MGF4317D: MGF4318D: M5M27C102P RV-15 MGF4310 MGF4314D MGF4318D MGF4316D MGF4317D MGF4317 MGF4318 MGF431	PDF