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    F78 PACKAGE Search Results

    F78 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    F78 PACKAGE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    F78 Package Cypress Semiconductor Ceramic Flatpacks Original PDF

    F78 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    48 Lead Ceramic Quad Flatpack

    Abstract: CERAMIC FLATPACK MIL-STD-1835 F70 Package
    Text: Package Diagram Ceramic Flatpacks 16-Lead Rectangular Flatpack F69 MIL-STD-1835 F-5 Config. B 18–Lead Rectangular Flatpack F70 1 Package Diagram 24-Lead Rectangular Flatpack F73 MIL-STD-1835 F- 6 Config. B 32-Lead Rectangular Flatpack F75 2 Package Diagram


    Original     		16-Lead MIL-STD-1835 24-Lead 32-Lead 42-Lead 48-Lead 64-Lead STD-1835 48 Lead Ceramic Quad Flatpack CERAMIC FLATPACK F70 Package PDF

    TDB6HK240N16P

    Abstract: No abstract text available
    Text: Technische Information / technical information TDB6HK240N16P IGBT-Module IGBT-modules EconoPACK 4 Modul und PressFIT EconoPACK™4 module and PressFIT * + , (-./ 0 1 ( 2- 345 0 6 , 2-78 0 ! 6 9 : 6 ; * •< • • "A( A • • • • * =1 = > ? :


    Original     		TDB6HK240N16P TDB6HK240N16P PDF

    62ajk

    Abstract: 2A99 TDB6HK360N16P
    Text: Technische Information / technical information TDB6HK360N16P IGBT-Module IGBT-modules EconoPACK 4 Modul und PressFIT / NTC EconoPACK™4 module and PressFIT / NTC * + , (-./ 0 1 ( 2- 345 0 1 6 , 2-78 0 9 : ; 6 < * •= • • !B( B • • • • *


    Original     		TDB6HK360N16P 62ajk 2A99 TDB6HK360N16P PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules TDB6HK240N16P EconoPACK 4 Modul und PressFIT EconoPACK™4 module and PressFIT C2 *36+436,61234286544 (-./6061( 2-6345606 66,62-78606 !6 981:366;35*3 • <47*333236=1=2>?3


    Original     		TDB6HK240N16P 326D9 356D9 1231423567896AB 4112CD3567896EF PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules TDB6HK360N16P EconoPACK 4 Modul und PressFIT / NTC EconoPACK™4 module and PressFIT / NTC C2 *36+436,61234286544 (-./6061( 2-6345606166,62-7860696 :81;366<35*3


    Original     		TDB6HK360N16P 1231423567896AB 4112CD3567896EF PDF

    1C13AD

    Abstract: 778C1
    Text: ML6101 ML6101 Series Voltage Monitor1 1 122345674891 1 BC67DECF1 2 Battery Charger Voltage Monitor 1 3 A 3 3 3 3 CMOS Low Power Consumption : Typical 1.0uAat Vin=2.0V Selectable Monitor Voltage : 1.1V to 6.0V in 0.1V increments HighlyAccurate : Detect Voltage 1.1V to 1.9V + 3%


    Original     		ML6101 ML6101 BC67DECF1 150mW) 500mW) 300mW) C9CE63A CF5E4274891 23415678981AB1C1DEF 13AD3 1C13AD 778C1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Mini-Circuits System In Package Ultra High IP3 Amplifier Module 50Ω HXG-122+ 0.5 to 1.2 GHz The Big Deal Ceramic Package • Industry leading High IP3, 47 dBm typ. • Integrated optimization circuits • Linearity with low current consumption ☛ LTE Performance


    Original     		HXG-122+ PDF

    TB-641-242

    Abstract: No abstract text available
    Text: Mini-Circuits System In Package Ultra High IP3 Amplifier Module 50Ω HXG-242+ 0.7 to 2.4 GHz The Big Deal Ceramic Package • Industry leading High IP3, 46 dBm typ. • Integrated optimization circuits • Linearity with low current consumption ☛ LTE Performance


    Original     		HXG-242+ TB-641-242 PDF

    Untitled

    Abstract: No abstract text available
    Text: Mini-Circuits System In Package Ultra High IP3 Amplifier Module 50Ω HXG-122+ 0.5 to 1.2 GHz The Big Deal Ceramic Package • Industry leading High IP3, 47 dBm typ. • Integrated optimization circuits • Linearity with low current consumption ☛ LTE Performance


    Original     		HXG-122+ PDF

    Untitled

    Abstract: No abstract text available
    Text: Mini-Circuits System In Package Ultra High IP3 Ampli er Module 50 HXG-122+ 0.5 to 1.2 GHz The Big Deal Ceramic฀Package •฀ Industry฀leading฀High฀IP3,฀47฀dBm฀typ. •฀ Integrated฀optimization฀circuits •฀ Linearity฀with฀low฀current฀consumption


    Original     		HXG-122+ PDF

    HXG-122

    Abstract: No abstract text available
    Text: Mini-Circuits System In Package Ultra High IP3 Amplifier Module 50Ω HXG-122+ 0.5 to 1.2 GHz The Big Deal Ceramic Package • Industry leading High IP3, 47 dBm typ. • Integrated optimization circuits • Linearity with low current consumption ☛ LTE Performance


    Original     		HXG-122+ HXG-122 PDF

    TB-641-242

    Abstract: No abstract text available
    Text: Mini-Circuits System In Package Ultra High IP3 Amplifier Module 50Ω HXG-242+ 0.7 to 2.4 GHz The Big Deal Ceramic Package • Industry leading High IP3, 46 dBm typ. • Integrated optimization circuits • Linearity with low current consumption ☛ LTE Performance


    Original     		HXG-242+ TB-641-242 PDF

    transistor marking code 7C

    Abstract: No abstract text available
    Text: BF 517 NPN Silicon RF Transistor • B ro ad b a n d am plifier and o sc illa to r ap p licatio n s up to 1 G H z Typ« Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape Package B F 517 LR Q 62702-F988 Q 62702-F78 S O T 23


    OCR Scan     		62702-F988 62702-F78 transistor marking code 7C PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ S' CY7C130/CY7C131 CY7C140/CY7C141 mm CYPRESS SEMICONDUCTOR • 1024 x 8 Dual-Port Static RAM Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than


    OCR Scan     		CY7C130/CY7C131 CY7C140/CY7C141 CY7C130/CY7C131 CY7C140/ CY7C141 CY7C130/ CY7C131; CY7C130/CY7C131/CY7C140/ CY7C141 PDF

    z131

    Abstract: Z1314 893Q C140 CY7C130 CY7C131 CY7C140 CY7C141 TSGB
    Text: CYPRESS SEMI CONDUCTOR bSE D • 258ThbE DDGT73M 5TB, «CYP CY7C130/CY7C131 CY7C140/CY7C141 PY ppT ?cq SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • 1TL compatible • Capable of withstanding greater than


    OCR Scan     		GQGT73M CY7C130/CY7C131 CY7C141 CY7CJ30/CY7C131 CY7C140/ CY7C141 CY7C130/ CY7C131; CY7C140/CY7C141 CY7C130/CY7C131/CY7C140/ z131 Z1314 893Q C140 CY7C130 CY7C131 CY7C140 TSGB PDF

    7C1312

    Abstract: Cypress 7C130
    Text: CY7C130/CY7C131 CY7C140/CY7C141 CYPRESS SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation


    OCR Scan     		CY7C130/CY7C131 CY7C140/CY7C141 CY7C140/ CY7C141 CY7C130/ CY7C131; CY7C140/CY7C141 7C1312 Cypress 7C130 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C130/CY7C131 CY7C140/CY7C141 CYPRESS SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation


    OCR Scan     		CY7C130/CY7C131 CY7C140/CY7C141 CY7C130/CY7C131 CY7C140/ CY7C141 CY7C130/ CY7C131; CY7C130/CY 7C131/CY7C140/ PDF

    7C130

    Abstract: L1314
    Text: CY7C130/CY7C131 CY7C140/CY7C141 _ 1024 x 8 Dual-Port Static RAM aT ^ p -¿r CYPRESS ^ SEMICONDUCTOR E ach p o rt has independent control pins; chip enable C E , w rite enable (RyW), and output The CY 7C130/CY7C131/CY7C140/ enable (O E ). TVvo flags are p rovided on each


    OCR Scan     		CY7C130/CY7C131 CY7C140/ CY7C141 CY7C130/ CY7C131; CY7C140/CY7C141 7C130/CY7C131/CY7C140/ CY7C14 7C130 L1314 PDF

    ys 2103

    Abstract: hex to 7 segment decoder CY7C132 CY7C146 CY7C136
    Text: CYPRESS S EMI COND UCTOR MbE D □ 5S0^bb2 GDDb 3S 3 7 C CYP CY7C132/CY7C136 CY7C142/CY7C146 2048 x 8 Dual-Port Static RAM output enable OE . BUSY flags are pro­ vided on each port. In addition, an interrupt flag (INT) is provided on each port of the 52-pin LCC and PLCC versions. BUSY sig­


    OCR Scan     		000l3s3 CY7C132/CY7C136 CY7C142/CY7C146 CY7C132/ CY7C136; 52-pin CY7C132/CY7C136/CY7C142/ ys 2103 hex to 7 segment decoder CY7C132 CY7C146 CY7C136 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation


    OCR Scan     		CY7C132/CY7C136 CY7C142/CY7C146 52-pin CY7C142/CY7C146 PDF

    Z1213

    Abstract: CY7C132 CY7C136 CY7C146 zl12
    Text: bSE » CYPRESS SEMICONDUCTOR SSÖ'lbbE 0 0 0 ^ 7 4 7 ISb I CYP CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR 2K x 8 Dual-Port Static RAM output enable OE . BUSY flags are pro­ vided on each port. In addition, an interrupt Functional Description Features


    OCR Scan     		CY7C132/CY7C136 CY7C142/CY7C146 CY7C142/CY7C146 CY7C132/ CY7C136; 52-pin CY7C132/CY7C136/CY7C142/ CY7C146 Z1213 CY7C132 CY7C136 zl12 PDF

    HA 13645

    Abstract: acr38
    Text: CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR 2K x 8 Dual-Port Static RAM Features Functional Description • 0.8-micron CM OS for optimum speed/power • BUSY output flag on CY7C132/ CY7C136; BUSY input on CY7C142/CY7C146 The CY7C132/CY 7C136/CY7C142/


    OCR Scan     		CY7C132/CY7C136 CY7C142/CY7C146 CY7C132/ CY7C136; 52-pin twfil24! HA 13645 acr38 PDF

    30l3l

    Abstract: No abstract text available
    Text: CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR F eatures F unctional D escription • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation


    OCR Scan     		CY7C132/CY7C136 CY7C142/CY7C146 MASTERCY7CI32/CY7C136 CY7C132/ CY7C136; 52-pin CY7C142/CY7C146 30l3l PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR 2K x 8 Dual-Port Static RAM Features Functional Description • 0.8-raicron CMOS for optimum speed/power • BÜSŸ output flag on CY7C132/ CY7C136; BUSY input on CY7C142/CY7C146 The CY7C132/CY 7C136/CY7C142/


    OCR Scan     		CY7C132/CY7C136 CY7C142/CY7C146 CY7C132/ CY7C136; CY7C132/CY 7C136/CY7C142/ 7C146 7C136 PDF