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    KEMET Corporation C1206X392FBGACTU

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 630V 3900pF C0G 1206 1% Flex Term
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    Mouser Electronics C1206X392FBGACTU
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    KEMET Corporation C1206X392FBGACAUTO

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 630V 3900pF C0G 1206 1% Flex AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics C1206X392FBGACAUTO
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    • 10 -
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    • 1000 -
    • 10000 $0.311
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    KEMET Corporation C1206X392FBGALTU

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 630V 3900pF C0G 1206 1% Flex Term
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics C1206X392FBGALTU
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    • 10000 $0.56
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    FBGA 9 X 20 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Memory Product Specification DK.04GAM.F9SK2 4GB 2GB 256M x 64Bit x 2pcs Kit DDR3-2000MHz CL9 Overclocking Unbuffered DIMM Description: The overclocking unbuffered Module is a kit of two 256M x 64bit of 2GB DDR3-2000MHz CL9-9-9-27 at 1.65v Memory Module. The Module base on sixteen 128M x 8-bit DDR3 FBGA SDRAM compoments.


    Original     		04GAM 64Bit DDR3-2000MHz DDR3-2000MHz CL9-9-9-27 DDR3-1333MHz CL9-9-9-24 240-pin 1333Mbps PDF

    MT49H16M18C

    Abstract: No abstract text available
    Text: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		288Mb 288Mb 09005aef80a41b59/zip: 09005aef811ba111 MT49H8M18C MT49H16M18C PDF

    dax6

    Abstract: Mobile SDRAM
    Text: V55C1256164MG 256Mbit MOBILE SDRAM 1.8 VOLT, TSOP II / FBGA PACKAGE 16M X 16 75 9 10 System Frequency fCK 133 MHz 111 MHz 100MHz Clock Cycle Time (tCK3) 7.5ns 9.0 ns 10 ns Clock Access Time (tAC3) CAS Latency = 3 6.0 ns 7.0 ns 8.0ns • Available in 54-ball FBGA (with 9x6 ball array


    Original     		V55C1256164MG 256Mbit 100MHz dax6 Mobile SDRAM PDF

    SMD d1c

    Abstract: SMD MARKING CODE ACY qkx capacitor smd codes marking A21 MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		288Mb 288Mb clo68-3900 MT49H16M18C SMD d1c SMD MARKING CODE ACY qkx capacitor smd codes marking A21 PDF

    BA5 marking

    Abstract: BA7 marking plastic BA5 marking code A53 SMD Marking Code ba7 transistor SMD MARKING CODE ACY MT49H16M18C smd cod RLDRAM A22 SMD MARKING CODE
    Text: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		288Mb MT49H16M18C MT49H32M9C 144-Ball 288Mb 09005aef80a41b59/zip: 09005aef811ba111 MT49H8M18C BA5 marking BA7 marking plastic BA5 marking code A53 SMD Marking Code ba7 transistor SMD MARKING CODE ACY MT49H16M18C smd cod RLDRAM A22 SMD MARKING CODE PDF

    smd dk qk

    Abstract: SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		288Mb 288Mb clo68-3900 MT49H16M18C smd dk qk SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM PDF

    MT49H16M18C

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		288Mb 288Mb MT49H8M18C MT49H16M18C PDF

    smd marking codes BA5

    Abstract: MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		288Mb 288Mb MT49H16M18C smd marking codes BA5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Memory Module Specification KVR1333D3S4R9S/2GI 2GB 256M x 72-Bit PC3-10600 CL9 Registered w/Parity 240-Pin DIMM DESCRIPTION: This document describes ValueRAM's 256M x 72-bit 2GB 2048MB DDR3-1333MHz CL9 SDRAM (Synchronous DRAM) registered w/parity, (Intel Compatibility Tested), single-rank memory module, based on eighteen 256M x 4bit DDR3-1333 FBGA components. The SPD is programmed to JEDEC standard latency 1333MHz timing of 9-9-9 at


    Original     		KVR1333D3S4R9S/2GI 72-Bit PC3-10600 240-Pin 2048MB) DDR3-1333MHz DDR3-1333 1333MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: Memory Module Specification KVR1333D3D8R9S/2GI 2GB 256M x 72-Bit PC3-10600 CL9 Registered w/Parity 240-Pin DIMM DESCRIPTION: This document describes ValueRAM's 256M x 72-bit 2GB 2048MB DDR3-1333 CL9 SDRAM (Synchronous DRAM), (Intel Compatibility Tested), registered w/parity, dual-rank memory module, based on eighteen 128M x 8-bit DDR31333 FBGA components. The SPD is programmed to JEDEC standard latency 1333Mhz timing of 9-9-9 at 1.5V. This


    Original     		KVR1333D3D8R9S/2GI 72-Bit PC3-10600 240-Pin 2048MB) DDR3-1333 DDR31333 1333Mhz PDF

    Untitled

    Abstract: No abstract text available
    Text: Memory Module Specification KVR1333D3D8R9SL/2G 2GB 256M x 72-Bit PC3-10600 CL9 Registered w/Parity 240-Pin DIMM DESCRIPTION: This document describes ValueRAM's 256M x 72-bit 1GB 2GB 2048MB DDR3-1333 CL9 SDRAM (Synchronous DRAM) registered w/parity, dual-rank memory module, based on eighteen 128M x 8-bit DDR3-1333 FBGA components. The SPD is programmed to JEDEC standard latency 1333Mhz timing of 9-9-9 at 1.5V. This 240-pin DIMM uses


    Original     		KVR1333D3D8R9SL/2G 72-Bit PC3-10600 240-Pin 2048MB) DDR3-1333 1333Mhz PDF

    MT49H16M18

    Abstract: No abstract text available
    Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		288Mb 288Mb output0006, MT49H8M36 MT49H16M18 PDF

    MT49H16M18

    Abstract: No abstract text available
    Text: 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		288MB MT49H8M36 MT49H16M18 MT49H32M9 144-Ball 288Mb 09005aef80a41b46/zip: 09005aef809f284b MT49H8M36 MT49H16M18 PDF

    marking code a02 SMD Transistor

    Abstract: transistor SMD DK MT49H16M18 smd transistor marking d1c Diode A3X transistor smd marking BA RE marking BAX smd cod plastic BA5 marking code A22 SMD MARKING CODE
    Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		288Mb MT49H8M36 MT49H16M18 MT49H32M9 144-Ball 288Mb MT49H8M36 marking code a02 SMD Transistor transistor SMD DK MT49H16M18 smd transistor marking d1c Diode A3X transistor smd marking BA RE marking BAX smd cod plastic BA5 marking code A22 SMD MARKING CODE PDF

    MARKING H1 AMP

    Abstract: MT49H16M18
    Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		288Mb 288Mb output0006, MT49H8M36 MARKING H1 AMP MT49H16M18 PDF

    MT49H16M18

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		288MB 288Mb MT49H8M36 MT49H16M18 PDF

    09005aef809f284b

    Abstract: No abstract text available
    Text: 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9‡ Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		288MB 288Mb MT49H8M36 MT49H16M18 09005aef80a41b46/zip: 09005aef809f284b PDF

    MT49H16M18

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		288MB 288Mb 09005aef809f284b MT49H8M36 MT49H16M18 PDF

    BW35

    Abstract: No abstract text available
    Text: ADVANCE‡ 4 MEG X 8, 4 MEG X 9, 2 MEG X 18, 1 MEG X 36 1.8V VDD, HSTL, DDRIIb4 SRAM 36Mb DDRII CIO SRAM 4-WORD BURST MT57W4MH8J MT57W4MH9J MT57W2MH18J MT57W1MH36J FEATURES • • • • • • • • • • • • • • • Figure 1 165-Ball FBGA


    Original     		MT57W1MH36J BW35 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb4 SRAM 36Mb QDR II SRAM 4-WORD BURST MT54W4MH8J MT54W4MH9J MT54W2MH18J MT54W1MH36J FEATURES Figure 1 165-Ball FBGA • DLL circuitry for accurate output data placement • Separate independent read and write data ports with


    Original     		MT54W4MH8J MT54W4MH9J MT54W2MH18J MT54W1MH36J 165-Ball MT54W1MH36J PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 4 MEG X 8, 4 MEG X 9, 2 MEG X 18, 1 MEG X 36 1.8V VDD, HSTL, DDR SIO SRAM 36Mb DDR SIO SRAM 2-WORD BURST MT57W4MH8C MT57W4MH9C MT57W2MH18C MT57W1MH36C FEATURES • • • • • • • • • • • • • • • • • Figure 1 165-Ball FBGA


    Original     		MT57W2MH18C PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, DDRIIb2 SRAM 36Mb DDRII CIO SRAM 2-WORD BURST MT57W4MH8B MT57W4MH9B MT57W2MH18B MT57W1MH36B Features • • • • • • • • • • • • • • • • • Figure 1: 165-Ball FBGA


    Original     		PDF

    micron sram

    Abstract: MT54W1MH36B MT54W2MH18B MT54W4MH8B MT54W4MH9B
    Text: ADVANCE‡ 4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM 36Mb QDR II SRAM 2-WORD BURST MT54W4MH8B MT54W4MH9B MT54W2MH18B MT54W1MH36B FEATURES Figure 1 165-Ball FBGA • DLL circuitry for accurate output data placement • Separate independent read and write data ports


    Original     		MT54W4MH8B MT54W4MH9B MT54W2MH18B MT54W1MH36B 165-Ball micron sram MT54W1MH36B MT54W2MH18B MT54W4MH8B MT54W4MH9B PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 4 MEG X 8, 4 MEG X 9, 2 MEG X 18, 1 MEG X 36 1.8V VDD, HSTL, DDRIIb2 SRAM 36Mb DDRII CIO SRAM 2-WORD BURST MT57W4MH8B MT57W4MH9B MT57W2MH18B MT57W1MH36B FEATURES • • • • • • • • • • • • • • • • Figure 1 165-Ball FBGA


    Original     		PDF