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    onsemi FDMC86261P

    MOSFET P-CH 150V 2.7A/9A 8MLP
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    DigiKey FDMC86261P Cut Tape 7,005 1
    • 1 $2.5
    • 10 $1.608
    • 100 $2.5
    • 1000 $0.81524
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    FDMC86261P Digi-Reel 7,005 1
    • 1 $2.5
    • 10 $1.608
    • 100 $2.5
    • 1000 $0.81524
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    FDMC86261P Reel 6,000 3,000
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    Avnet Americas FDMC86261P Reel 15 Weeks 3,000
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    • 10000 $0.71566
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    Newark FDMC86261P Cut Tape 7,806 1
    • 1 $2.01
    • 10 $1.4
    • 100 $1.03
    • 1000 $0.784
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    TME FDMC86261P 1
    • 1 $1.49
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    Richardson RFPD FDMC86261P 3,000
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    Avnet Asia FDMC86261P 15 Weeks 3,000
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    Avnet Silica FDMC86261P 16 Weeks 3,000
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    Chip One Stop FDMC86261P Cut Tape 2,820
    • 1 $1.81
    • 10 $1.28
    • 100 $0.944
    • 1000 $0.846
    • 10000 $0.844
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    EBV Elektronik FDMC86261P 17 Weeks 3,000
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    Wuhan P&S FDMC86261P 1,071 1
    • 1 $2.08
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    • 100 $1.33
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    onsemi FDMC7678-L701

    PT8 N 30/20V MLP3.3X3.3
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    DigiKey FDMC7678-L701 Digi-Reel 5,128 1
    • 1 $1.36
    • 10 $0.855
    • 100 $1.36
    • 1000 $0.40342
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    FDMC7678-L701 Cut Tape 5,128 1
    • 1 $1.36
    • 10 $0.855
    • 100 $1.36
    • 1000 $0.40342
    • 10000 $0.40342
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    FDMC7678-L701 Reel 3,000 3,000
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    Mouser Electronics FDMC7678-L701 2,985
    • 1 $1.07
    • 10 $0.719
    • 100 $0.5
    • 1000 $0.368
    • 10000 $0.317
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    Onlinecomponents.com FDMC7678-L701
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    Rochester Electronics FDMC7678-L701 1,893 1
    • 1 $0.3557
    • 10 $0.3557
    • 100 $0.3344
    • 1000 $0.3023
    • 10000 $0.3023
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    Richardson RFPD FDMC7678-L701 3,000
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    Avnet Silica FDMC7678-L701 17 Weeks 3,000
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    EBV Elektronik FDMC7678-L701 18 Weeks 3,000
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    onsemi FDMC86160

    MOSFET N CH 100V 9A POWER33
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    DigiKey FDMC86160 Digi-Reel 4,475 1
    • 1 $3.11
    • 10 $2.024
    • 100 $3.11
    • 1000 $1.0543
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    FDMC86160 Reel 3,000 3,000
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    Mouser Electronics FDMC86160 51,908
    • 1 $2.46
    • 10 $1.77
    • 100 $1.3
    • 1000 $1.02
    • 10000 $0.979
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    Bristol Electronics FDMC86160 484 3
    • 1 -
    • 10 $1.8
    • 100 $1.5
    • 1000 $0.84
    • 10000 $0.84
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    Rochester Electronics FDMC86160 22,349 1
    • 1 $1.12
    • 10 $1.12
    • 100 $1.05
    • 1000 $0.952
    • 10000 $0.952
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    TME FDMC86160 1
    • 1 $2.06
    • 10 $1.7
    • 100 $1.4
    • 1000 $1.33
    • 10000 $1.33
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    Richardson RFPD FDMC86160 3,000
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    Avnet Asia FDMC86160 14 Weeks 3,000
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    • 10000 $1.02974
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    Avnet Silica FDMC86160 15 Weeks 3,000
    • 1 -
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    Chip One Stop FDMC86160 Cut Tape 2,850
    • 1 $2.1
    • 10 $1.56
    • 100 $1.15
    • 1000 $1.04
    • 10000 $0.921
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    EBV Elektronik FDMC86160 16 Weeks 3,000
    • 1 -
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    Master Electronics FDMC86160 3,000
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    Win Source Electronics FDMC86160 25,000
    • 1 -
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    • 100 $0.8295
    • 1000 $0.6422
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    onsemi FDMC7208S

    MOSFET 2N-CH 30V 12A/16A 8PWR33
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDMC7208S Cut Tape 4,345 1
    • 1 $2.51
    • 10 $1.619
    • 100 $2.51
    • 1000 $0.81834
    • 10000 $0.81834
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    FDMC7208S Digi-Reel 4,345 1
    • 1 $2.51
    • 10 $1.619
    • 100 $2.51
    • 1000 $0.81834
    • 10000 $0.81834
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    FDMC7208S Reel 3,000 3,000
    • 1 -
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    • 10000 $0.7195
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    Avnet Americas FDMC7208S Reel 0 Weeks, 2 Days 1,163
    • 1 -
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    • 10000 $0.64463
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    FDMC7208S Reel 15 Weeks 3,000
    • 1 -
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    • 10000 $0.6936
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    Newark FDMC7208S Cut Tape 2,854 1
    • 1 $2.13
    • 10 $1.46
    • 100 $1.03
    • 1000 $0.785
    • 10000 $0.785
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    RS FDMC7208S Bulk 2 Weeks 5
    • 1 -
    • 10 $0.98
    • 100 $0.98
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    • 10000 $0.98
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    TME FDMC7208S 1
    • 1 $1.56
    • 10 $1.3
    • 100 $1.02
    • 1000 $0.95
    • 10000 $0.95
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    Ameya Holding Limited FDMC7208S 4,033
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    Richardson RFPD FDMC7208S 3,000
    • 1 -
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    Avnet Silica FDMC7208S 16 Weeks 3,000
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    EBV Elektronik FDMC7208S 17 Weeks 3,000
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    Flip Electronics FDMC7208S 2,411
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    onsemi FDMC0310AS-F127

    MOSFET N-CH 30V 21A 8MLP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDMC0310AS-F127 Reel 3,000 3,000
    • 1 -
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    Avnet Americas FDMC0310AS-F127 Reel 0 Weeks, 2 Days 1,764
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    Rochester Electronics FDMC0310AS-F127 2,633 1
    • 1 $0.3792
    • 10 $0.3792
    • 100 $0.3564
    • 1000 $0.3223
    • 10000 $0.3223
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    TME FDMC0310AS-F127 1
    • 1 $0.83
    • 10 $0.681
    • 100 $0.518
    • 1000 $0.415
    • 10000 $0.415
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    Richardson RFPD FDMC0310AS-F127 3,000
    • 1 -
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    • 10000 $0.34
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    EBV Elektronik FDMC0310AS-F127 16 Weeks 3,000
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    Flip Electronics FDMC0310AS-F127 3,000
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    Find more FDMC price and stock on Findchips.com

    FDMC Datasheets (132)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDMC007N08LC ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 80V 66A 8PQFN Original PDF
    FDMC007N08LCDC ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - FET 80V 7.0 MOHM PQFN33 Original PDF
    FDMC007N30D ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2 N-CHANNEL 30V 46A 8MLP Original PDF
    FDMC008N08C ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 80V 60A 8PQFN Original PDF
    FDMC010N08C ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - PTNG 80/20V IN 3X3CLIP Original PDF
    FDMC010N08LC ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - FET 80V 10.0 MOHM PQFN33 Original PDF
    FDMC012N03 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V Original PDF
    FDMC013P030Z ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 30V 54A 8MLP Original PDF
    FDMC0310AS ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 19A 8QFN Original PDF
    FDMC0310AS_F127 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 20V 8QFN Original PDF
    FDMC0310AS-F127 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 20V 8QFN Original PDF
    FDMC15N06 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 2.4A MLP Original PDF
    FDMC2512SDC Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 32A 8PQFN Original PDF
    FDMC2514SDC Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 40A POWER33 Original PDF
    FDMC2523P Fairchild Semiconductor P-Channel QFET -150V, -3A, 1.5ohm Original PDF
    FDMC2523P Fairchild Semiconductor P-Channel QFET -150V, -3A, 1.5 Ohm Original PDF
    FDMC2610 Fairchild Semiconductor N-Channel UltraFET Trench MOSFET(200V, 9.5A, 200mohm) Original PDF
    FDMC2610 Fairchild Semiconductor N-Channel UltraFET Trench MOSFET 200V, 9.5A, 200m Ohm Original PDF
    FDMC2674 Fairchild Semiconductor 220V N-Channel UltraFET Trench MOSFET Original PDF
    FDMC2674 Fairchild Semiconductor N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366m Ohm Original PDF
    ...

    FDMC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2326S

    Abstract: No abstract text available
    Text: FDMC86160 N-Channel Power Trench MOSFET 100 V, 43 A, 14 mΩ Features General Description „ Max rDS on = 14 mΩ at VGS = 10 V, ID = 9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		FDMC86160 FDMC86160 2326S PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC89521L Dual N-Channel PowerTrench MOSFET 60 V, 8.2 A, 17 mΩ Features General Description This device includes two 60 V N-Channel MOSFETs in a dual Power 33 3 mm X 3 mm MLP package. The package is enhanced for exceptional thermal performance. „ Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 8.2 A


    Original     		FDMC89521L FDMC89521L PDF

    FDMC8884

    Abstract: -20/equivalent mosfet fdmc8884
    Text: FDMC8884 N-Channel Power Trench MOSFET 30 V, 15 A, 19 mΩ Features General Description „ Max rDS on = 19 mΩ at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		FDMC8884 FDMC8884 -20/equivalent mosfet fdmc8884 PDF

    FDMC7692

    Abstract: No abstract text available
    Text: FDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m: Features General Description „ Max rDS on = 8.5 m: at VGS = 10 V, ID = 13.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		FDMC7692 FDMC7692 PDF

    FDMC4435BZ

    Abstract: 63a23 05MAX00 FDMC4435B
    Text: FDMC4435BZ P-Channel Power Trench MOSFET -30 V, -18 A, 20 m: Features General Description „ Max rDS on = 20 m: at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		FDMC4435BZ FDMC4435BZ 63a23 05MAX00 FDMC4435B PDF

    5614p

    Abstract: FDMC5614P
    Text: FDMC5614P P-Channel PowerTrench MOSFET -60V, -13.5A, 100mΩ Features tm General Description „ Max rDS on = 100mΩ at VGS = -10V, ID = -5.7A This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process. It has been


    Original     		FDMC5614P V-20V) FDMC5614P 5614p PDF

    FDMC86324

    Abstract: V1318
    Text: FDMC86324 N-Channel Power Trench MOSFET 80 V, 20 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		FDMC86324 FDMC86324 V1318 PDF

    v5893

    Abstract: FDMC86240 33X3
    Text: FDMC86240 N-Channel Power Trench MOSFET 150 V, 16 A, 51 mΩ Features General Description „ Max rDS on = 51 mΩ at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		FDMC86240 v5893 FDMC86240 33X3 PDF

    FDMC6675

    Abstract: A50008
    Text: FDMC6675BZ P-Channel Power Trench MOSFET tm -30 V, -20 A, 14.4 mΩ Features General Description „ Max rDS on = 14.4 mΩ at VGS = -10 V, ID = -9.5 A „ HBM ESD protection level of 8 kV typical(note 3) The FDMC6675BZ has been designed to minimize losses in


    Original     		FDMC6675BZ FDMC6675BZ FDMC6675 A50008 PDF

    FDMC7570S

    Abstract: 4410 mosfet
    Text: FDMC7570S N-Channel Power Trench SyncFETTM 25 V, 40 A, 2 mΩ Features General Description „ Max rDS on = 2 mΩ at VGS = 10 V, ID = 27 A The FDMC7570S has been designed to minimize losses in „ Max rDS(on) = 2.9 mΩ at VGS = 4.5 V, ID = 21.5 A power conversion application. Advancements in both silicon and


    Original     		FDMC7570S FDMC7570S 4410 mosfet PDF

    FDMC8622

    Abstract: C3731
    Text: FDMC8622 N-Channel Power Trench MOSFET 100 V, 16 A, 56 mΩ Features General Description „ Max rDS on = 56 mΩ at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original     		FDMC8622 FDMC8622 C3731 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC86116LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process


    Original     		FDMC86116LZ PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC89521L Dual N-Channel PowerTrench MOSFET 60 V, 8.2 A, 17 mΩ Features General Description This device includes two 60 V N-Channel MOSFETs in a dual Power 33 3 mm X 3 mm MLP package. The package is enhanced for exceptional thermal performance. „ Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 8.2 A


    Original     		FDMC89521L PDF

    FDMC2674

    Abstract: No abstract text available
    Text: FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ Features tm General Description „ Max rDS on = 366mΩ at VGS = 10V, ID = 1.0A UltraFET device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge,


    Original     		FDMC2674 FDMC2674 PDF

    DSA0024094

    Abstract: No abstract text available
    Text: FDMC7692S N-Channel Power Trench SyncFETTM 30 V, 12.5 A, 9.3 m: Features General Description This FDMC7692S is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well


    Original     		FDMC7692S FDMC7692S DSA0024094 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC2610 N-Channel UltraFET Trench MOSFET 200V, 9.5A, 200mΩ Features General Description „ Max rDS on = 200mΩ at VGS = 10V, ID = 2.2A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management


    Original     		FDMC2610 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC7582 N-Channel PowerTrench MOSFET 25 V, 49 A, 5.0 mΩ Features General Description „ Max rDS on = 5.0 mΩ at VGS = 10 V, ID = 16.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		FDMC7582 FDMC7582 PDF

    FDMC7680

    Abstract: MO-229 148 FSC
    Text: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m: Features General Description „ Max rDS on = 7.2 m: at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		FDMC7680 FDMC7680 MO-229 148 FSC PDF

    FDMC7672

    Abstract: MO-229
    Text: FDMC7672 N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m: Features General Description „ Max rDS on = 5.7 m: at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		FDMC7672 FDMC7672 MO-229 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC7696 N-Channel PowerTrench MOSFET 30 V, 12 A, 11.5 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.This


    Original     		FDMC7696 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description „ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		FDMC86320 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC8200 Dual N-Channel PowerTrench MOSFET 30 V, 9.5 mΩ and 20 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 20 mΩ at VGS = 10 V, ID = 6 A dual Power33 (3mm x 3mm MLP) package. The switch node


    Original     		FDMC8200 Power33 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC86261P P-Channel PowerTrench MOSFET -150 V, -9 A, 160 mΩ Features General Description „ Max rDS on = 160 mΩ at VGS = -10 V, ID = -2.4 A „ Very low RDS-on mid voltage P channel silicon technology optimised for low Qg This P-Channel MOSFET is produced using Fairchild


    Original     		FDMC86261P PDF

    TC8600F

    Abstract: 1126to PHOTO INTERRUPT ROTATING SPEED SENSOR 360rpm magnetic head FDD
    Text: TOSHIBA INTEGRATED CIRCUIT TC8600F TECHNICAL DATA TC8600F Fl o pp y Disk Mechanism Controller INTRODUCTION The FDMC-II TC8600F is a one chip C-MOS LSI in which the control logic of FLOPPY DISK DRIVE (FDD), together with the 4-bit CPU and required random logic.


    OCR Scan     		TC8600F TC8600F TC8600F, 1126to PHOTO INTERRUPT ROTATING SPEED SENSOR 360rpm magnetic head FDD PDF