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    Abstract: No abstract text available
    Text: TM UniFET-II FDP3N50NZ / FDPF3N50NZ tm N-Channel MOSFET 500V, 3A, 2.5 Features Description • RDS on = 2.1 (Typ.)@ VGS = 10V, ID = 1.5A • Low Gate Charge (Typ. 6.2nC) These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP3N50NZ FDPF3N50NZ

    FDPF3N50NZ

    Abstract: MOSFET 500V 3A FDP3N50NZ
    Text: TM UniFET-II FDP3N50NZ / FDPF3N50NZ tm N-Channel MOSFET 500V, 3A, 2.5 Features Description • RDS on = 2.1 (Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP3N50NZ FDPF3N50NZ FDPF3N50NZ MOSFET 500V 3A