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    FDPF3N50NZ Price and Stock

    onsemi FDPF3N50NZ

    MOSFET N-CH 500V 3A TO220F
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    Onlinecomponents.com FDPF3N50NZ 505
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    Rochester Electronics FDPF3N50NZ 2,573 1
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    TME FDPF3N50NZ 505
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    Rochester Electronics LLC FDPF3N50NZ

    POWER FIELD-EFFECT TRANSISTOR, 3
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    Fairchild Semiconductor Corporation FDPF3N50NZ

    FDPF3N50 - Power Field-Effect Transistor, 3A, 500V, 2.5ohm, N-Channel, MOSFET, TO-220AB
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    Rochester Electronics FDPF3N50NZ 5,000 1
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    FDPF3N50NZ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDPF3N50NZ Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 3A TO-220F Original PDF

    FDPF3N50NZ Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FDPF3N50NZ N-Channel UniFETTM II MOSFET 500 V, 3 A, 2.5  Features Description • RDS on = 2.1  (Typ.) @ VGS = 10 V, ID = 1.5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		PDF FDPF3N50NZ

    FDPF3N50NZ

    Abstract: No abstract text available
    Text: FDPF3N50NZ N-Channel UniFETTM II MOSFET 500 V, 3 A, 2.5  Features Description • RDS on = 2.1  (Typ.) @ VGS = 10 V, ID = 1.5 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the


    Original     		PDF FDPF3N50NZ FDPF3N50NZ

    Untitled

    Abstract: No abstract text available
    Text: TM UniFET-II FDP3N50NZ / FDPF3N50NZ tm N-Channel MOSFET 500V, 3A, 2.5 Features Description • RDS on = 2.1 (Typ.)@ VGS = 10V, ID = 1.5A • Low Gate Charge (Typ. 6.2nC) These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP3N50NZ FDPF3N50NZ

    FDPF3N50NZ

    Abstract: MOSFET 500V 3A FDP3N50NZ
    Text: TM UniFET-II FDP3N50NZ / FDPF3N50NZ tm N-Channel MOSFET 500V, 3A, 2.5 Features Description • RDS on = 2.1 (Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP3N50NZ FDPF3N50NZ FDPF3N50NZ MOSFET 500V 3A