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    FET 2SK109 Search Results

    FET 2SK109 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1095-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 25A Mohm To-220Fm Visit Renesas Electronics Corporation
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation

    FET 2SK109 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK1098-M

    Abstract: No abstract text available
    Text: 2SK1098-M N-channel MOS-FET F-III Series 150V > Features - 0,5Ω 6A 30W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier


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    2SK1098-M 2SK1098-M PDF

    2SK109

    Abstract: No abstract text available
    Text: 2SK1098-M N-channel MOS-FET F-III Series 150V > Features - 0,5Ω 6A 30W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier


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    2SK1098-M 2SK109 PDF

    2SK1094

    Abstract: 2SK971
    Text: 2SK1094 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,


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    2SK1094 220FM 2SK1094 2SK971 PDF

    2SK1093

    Abstract: 2SK970
    Text: 2SK1093 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,


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    2SK1093 220FM 2SK1093 2SK970 PDF

    2SK1095

    Abstract: 2SK972
    Text: 2SK1095 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,


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    2SK1095 220FM 2SK1095 2SK972 PDF

    2SK1095

    Abstract: 2SK972 Hitachi DSA0015
    Text: 2SK1095 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original
    2SK1095 O-220FM 2SK1095 2SK972 Hitachi DSA0015 PDF

    2sk970

    Abstract: Hitachi DSA0017 Hitachi DSA00175
    Text: 2SK1093 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original
    2SK1093 O-220FM 2sk970 Hitachi DSA0017 Hitachi DSA00175 PDF

    2SK1094

    Abstract: 2SK971 2SK109 Hitachi DSA0015
    Text: 2SK1094 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original
    2SK1094 O-220FM 2SK1094 2SK971 2SK109 Hitachi DSA0015 PDF

    A2142

    Abstract: 2sk mosfet
    Text: 2SK1096-M SIPMOS FUJI POWER MOS-FET F-III SERIES N-CHANNEL SILICON POWER MOS-FET • Outline Drawings ■ Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications • Motor controllers


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    2SK1096-M 1096-M 00Q30DD A2-144 A2142 2sk mosfet PDF

    2SK1096-MR

    Abstract: A2144 1096-MR A2142
    Text: 2SK1096-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-III SERIES • Outline Drawings ■ Features • High current • Low on-resistance • Mo secondary breakdown • Low driving power • High forward Transconductance ■ applications • Motor controllers


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    2SK1096-MR SC-67 Tc-25 51tzo A2144 1096-MR A2142 PDF

    z9l3

    Abstract: a2142 2SK1096-MR SERIES UK5 A2144
    Text: 2SK1096-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-III SERIES • Outline Drawings ■ Features • High current • Low on-resistance • Mo secondary breakdown • Low driving power • High forward Transconductance ■ applications • Motor controllers


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    2SK1096-MR SC-67 Tc-25 z9l3 a2142 SERIES UK5 A2144 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1098-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-III S E R I E S • Outline Drawings ■ Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications


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    2SK1098-M PDF

    2SK1098-MR

    Abstract: A2146 2SK1098MR A2147
    Text: 2SK1098-MR FUJI POWER MOS-FET N-CUANNEL SILICON POWER MOS-FET F - III S E R I E S Outline Drawings • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications • M ctor controllers


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    2SK1098-MR SC-67 2SK1098-MR A2146 2SK1098MR A2147 PDF

    ITK 2-1

    Abstract: 2SK1099 schematic symbols UPS TCA 430
    Text: 2SK1099 S I P M O S ^ i'^ - M O S - F E T N ? * * ;t^ < 7 - M O S-FET F-I SERIES ro > N-CHANNEl SILICON POWER MOS-FET : Features : Outline Drawings H igh speed switching Low on-resisiance N o secondary breakdown • D U J j^ iV ' •f t H i g Low driving powe<


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    2SK1099 ITK 2-1 2SK1099 schematic symbols UPS TCA 430 PDF

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


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    ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212 PDF

    2SK66

    Abstract: No abstract text available
    Text: 2SK1092 - Preliminary SIE D • SINGLE GATE GaAs M ES FET HITACHI/ OPTOELECTRONICS VHF/UHF W IDE BAND AMPLIFIER I MMTbEQS 0011700 071 ■ HITM OUTLINE DRAWING ■ A B S O L U T E M AXIMUM R A T IN G S


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    2SK1092 d--20mA, -20mA, /-50M /c--20mA, /-900M 2SK66 PDF

    k1096

    Abstract: No abstract text available
    Text: 2SK1096-MR FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET _ - F-III S E R IE S • Outline Drawings ■ Features • High current • Low on-resistance • Mo secondary breakdown • Low driving power • High forward Transconductance


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    2SK1096-MR k1096 PDF

    2SK1092

    Abstract: 2SK666
    Text: 2SK1092 Preliminary SINGLE GATE GaAs MES FET VHF/UHF WIDE BAND AMPLIFIER • OUTLINE DRAWING 1.8 Z ;£T rJ = m 0~0 1 ;ä : 1• 2. 3. 4. Source G ate NC D rain Dim ensions in mra (MPAK-4) I ABSOLUTE MAXIMUM RATINGS (To-25*C ) Item Drain to Source Voltage


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    2SK1092 To-25 -20mA, 50MHz --900MHz 2SK666 2SK1092 2SK666 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1094 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


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    2SK1094 2SK971. PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1093 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan
    2SK1093 2SK970. PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1095 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan
    2SK1095 2SK972. PDF

    A2147

    Abstract: 2sk109
    Text: 2SK1098-MR FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET p j j SERIES j • Outline Drawings ■ Features • H ich current • Lo w on-resistance • No second ary breakdow n • Lo w driving pow er • High forw ard T ran sco n d u ctan ce


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    2SK1098-MR 5388-7SS7 A2147 2sk109 PDF

    A2146

    Abstract: 2sk 30A MOSFET 1098M DIODE B91 2SK1098-M PJ50 2sk mosfet
    Text: 2SK1098-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S Outline Drawings • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance


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    2SK1098-M SC-67 A2146 2sk 30A MOSFET 1098M DIODE B91 PJ50 2sk mosfet PDF

    k502

    Abstract: cnc schematic 2SK1096-M 2SK1096M CQ 417
    Text: 2SK1096-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F-III SERIES • O utline D raw ing s ■ Features • High current • Low on-resistance • No secondary breakdow n • Low driving p o w er • High fo rw ard T ransconductance


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    2SK1096-M SC-67 0003Q0G A2-144 k502 cnc schematic 2SK1096M CQ 417 PDF