mosfet 1200V
Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V
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CMF20120D-Silicon
CMF20120D
O-247-3
CMF20120D
mosfet 1200V
cmf20120
SiC MOSFET
Cree SiC MOSFET
DMOSFET
IXDI414
DMOS SiC
JEDEC24
RB160M-60
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14580 Revision. 2 Product Standards MOS FET FC4B22070L FC4B22070L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 1.67 3 1 2 Features y Low source-source ON resistance:Rss on typ. = 17.5 m Ω（VGS = 4.5 V)
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TT4-EA-14580
FC4B22070L
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14847 Revision. 1 Product Standards MOS FET FC6B22220L FC6B22220L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.56 5 4 1 2 3 Features y Low source-source ON resistance:Rss on typ. = 8.2 m Ω（VGS = 4.5 V)
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TT4-EA-14847
FC6B22220L
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14734 Revision. 2 Product Standards MOS FET FC6B22100L FC6B22100L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.56 5 4 1 2 3 • Features Low source-source ON resistance:Rss on typ. = 8.2 m （VGS = 4.5 V)
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TT4-EA-14734
FC6B22100L
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14513 Revision. 1 Product Standards MOS FET FC6B22090L FC6B22090L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.56 5 4 1 2 3 • Features Low source-source ON resistance:Rss on typ. = 8.5 m （VGS = 4.5 V)
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TT4-EA-14513
FC6B22090L
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14952 Revision. 1 Product Standards MOS FET FC8V36060L FC8V36060L Single N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits For load switching 2.9 0.3 8 7 6 5 1 2 3 4 0.16 Features 2.4 2.8 y Low drain-source ON resistance:RDS on typ. = 70 mΩ（VGS = 4.5 V)
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TT4-EA-14952
FC8V36060L
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14176 Revision. 2 Product Standards MOS FET FC4B21080L FC4B21080L Gate resistor installed Dual N-channel MOS FET Unit: mm • Package dimension For lithium-ion secondary battery protection circuits 1.11 3 1 2 1.11 4 Features 0.1 Low source-source ON resistance:Rss on typ. = 27 m （VGS = 4.5 V)
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TT4-EA-14176
FC4B21080L
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VP2450 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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VP2450
DSFP-VP2450
B082613
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicongate manufacturing process. This combination produces a
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VN10K
DSFP-VN10K
B031411
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marking oc diode sot89
Abstract: No abstract text available
Text: Supertex inc. VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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VP3203
DSFP-VP3203
B082613
marking oc diode sot89
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Untitled
Abstract: No abstract text available
Text: VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability
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VP3203
VP3203
DSFP-VP3203
A042709
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VN1509
Abstract: No abstract text available
Text: Supertex inc. VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode
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VN0109
DSFP-VN0109
B071411
VN1509
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode
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VN0104
DSFP-VN0104
B071411
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C031411
Abstract: No abstract text available
Text: Supertex inc. VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode
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VN2406
DSFP-VN2406
C031411
C031411
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Untitled
Abstract: No abstract text available
Text: TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 2.0V max. High input impedance and high gain Free from secondary breakdown Low CISS and fast switching speeds This low threshold, enhancement-mode (normally-off)
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TN5325
DSFP-TN5325
A052009
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TN1L
Abstract: No abstract text available
Text: Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage
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TN0104
DSFP-TN0104
C071411
TN1L
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Untitled
Abstract: No abstract text available
Text: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces
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TN0106
DSFP-TN0106
B080811
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sot 23 x 316
Abstract: fet sot-89 marking code sot-89 MARKING CODE ab TN5325 TN5325K1-G TN5325N3-G TN5325N8-G jedec sot-23
Text: TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN5325
DSFP-TN5325
A052009
sot 23 x 316
fet sot-89 marking code
sot-89 MARKING CODE ab
TN5325
TN5325K1-G
TN5325N3-G
TN5325N8-G
jedec sot-23
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DN5MW
Abstract: DN3545 DN3545N3-G DN3545N8-G
Text: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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DN3545
DSFP-DN3545
B051909
DN5MW
DN3545
DN3545N3-G
DN3545N8-G
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D2625
Abstract: No abstract text available
Text: Supertex inc. DN2625 N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options Features General Description Very low gate threshold voltage Designed to be source-driven Low switching losses Low effective output capacitance Designed for inductive loads
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DN2625
MD2130
DN2625
DSFP-DN2625
B052110
D2625
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability
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VP2206
VP2206
DSFP-VP2206
D031411
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125OC
Abstract: VF15 VN0104 VN0104N3-G VN1504NW
Text: Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input
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VN0104
DSFP-VN0104
B030411
125OC
VF15
VN0104
VN0104N3-G
VN1504NW
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Untitled
Abstract: No abstract text available
Text: Supertex inc. TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability
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TN2106
DSFP-TN2106
B080913
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2406L
Abstract: VN2406 A120109
Text: VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicongate manufacturing process. This combination produces a
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VN2406
DSFP-VN2406
A120109
2406L
VN2406
A120109
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