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    sfh 517

    Abstract: Q62702-P1136 Q62702-P1137 Q62702-P1139 Q62702-P296 TA521 SFH415
    Text: SFH 415 SFH 416 SFH 415 SFH 416 fex06630 fexf6626 GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● GaAs-IR-Lumineszenzdioden, hergestellt


    Original     		fex06630 fexf6626 415-T 415-U 416-R sfh 517 Q62702-P1136 Q62702-P1137 Q62702-P1139 Q62702-P296 TA521 SFH415 PDF

    GEO06645

    Abstract: GEX06630 OHRD1938 Q62702-P1136 Q62702-P1137 Q62702-P1139 Q62702-P296
    Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Cathode 29 27 7.8 7.5 5.9 5.5 4.8 4.2 Area not flat fexf6626 0.4 0.6 ø4.8 ø5.1 0.4 0.8 spacing 2.54 mm 1.8 1.2 9.0 8.2 0.6 0.4 GEO06645 Chip position Area not flat 29.5 27.5 Cathode Diode


    Original     		fexf6626 GEO06645 fex06630 GEX06630 OHR01553 OHR00860 GEO06645 GEX06630 OHRD1938 Q62702-P1136 Q62702-P1137 Q62702-P1139 Q62702-P296 PDF

    transistor 415

    Abstract: GEO06645 GEX06630 OHRD1938 Q62702-P1136 Q62702-P1137 Q62702-P1139 Q62702-P296 transistor sr 61
    Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Cathode 29 27 7.8 7.5 5.9 5.5 4.8 4.2 Area not flat 0.6 0.4 fexf6626 0.4 0.6 ø4.8 ø5.1 0.4 0.8 spacing 2.54mm 1.8 1.2 9.0 8.2 GEO06645 Chip position Approx. weight 0.2 g 5.9 5.5 0.6 0.4 4.0


    Original     		fexf6626 GEO06645 GEX06630 fex06630 OHR01553 OHR00860 transistor 415 GEO06645 GEX06630 OHRD1938 Q62702-P1136 Q62702-P1137 Q62702-P1139 Q62702-P296 transistor sr 61 PDF