ES0406
Abstract: r00nF A6151 TDA615 6151X sc 6700
Text: bSE D • fi235bD5 0 0 5 3 7 ^ 7T4 « S I E G SIEM EN S_ _ SIEMENS AKTIENGES ELLS CHAF S a t e l l i t e - V i d e o IC TDA6151X Bipolar 1C Preliminary Data Features • G a in adjustable for different FM -deviations • V id e o buffer and sp ecial baseband output for the sound
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fi235bD5
TDA6151X
UES04073
ES0406
r00nF
A6151
TDA615
6151X
sc 6700
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smd transistor AFQ 36
Abstract: P-TQ220-5-1 transistor c160 type TLE4270 smd transistor 7D QK55 TRANSISTOR T0220 AEP01922 AEP02172 Q67000-A9209
Text: fi235bD5 O O l b b l ? ATT S IEM EN S T L E 427 0 5-V Low -D ro p Fixed V o ltage R egulator Features Output voltage tolerance < ± 2 % Low-drop voltage Integrated overtemperature protection Reverse polarity protection Input voltage up to 42 V Overvoltage protection up to 65 V < 400 ms
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fi235b05
Q67000-A9209
P-TQ220-5-1
Q67000-A9243
P-T0220-5-2
Q67006-A9201
P-TQ220-5-8
0235bOS
P-T0220-5-8
smd transistor AFQ 36
P-TQ220-5-1
transistor c160
type TLE4270
smd transistor 7D
QK55
TRANSISTOR T0220
AEP01922
AEP02172
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eeprom 24C16 5 pin
Abstract: 24C16-S 24C08 CHIP 8-PIN 24c16 24c16 EEPROM 24c16 wp DATA SHEET 24C16 24c08 wp 24C16 application Q67100-H3226
Text: • ÔE35h05 □□TûflTfl h3S ■ S IE M E N S 8/16 K bit 1024/2048 x 8 bit Serial C M O S EE P R O M s, I 2C Synchro n o us 2-W ire Bus S L x 2 4C 08 /1 6 Preliminary Features I • Data EEPROM internally organized as 1024/2048 bytes and 64/128 pages x 16 bytes
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24C08/16
235b05
eeprom 24C16 5 pin
24C16-S
24C08
CHIP 8-PIN 24c16
24c16 EEPROM
24c16 wp
DATA SHEET 24C16
24c08 wp
24C16 application
Q67100-H3226
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistors • • BUZ 84 BUZ 84 A N channel Enhancement mode Type V ds Id BUZ 84 800 V BUZ 84 A 800 V Package 1> Ordering Code Tc ^OS on 5.3 A 25 "C 2.0 £2 TO-204 AA C67078-A1013-A2 6.0 A 29 "C 1.5 n TO-204 AA C67078-A1013-A3 Maximum Ratings
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O-204
C67078-A1013-A2
C67078-A1013-A3
23SLG5
00bfl031
fl23SbOS
GDbfi032
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tda 2572
Abstract: tda 2050 equivalent TDA 1432
Text: SIEM ENS Clock Sync Generator SDA 9257 Preliminary Data MOS 1C Features • • • • • • • • • • All settings made by I2C Bus PLL lock-in behavior can be set to TV- or VCR mode Automatic clamping of CVBS input Provides all horizontal and vertical sync signals and
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24-MHz
27-MHz
50/60-Hz
fl235
P-LCC-44-1
fl23Sfc
A235b05
fl235b05
tda 2572
tda 2050 equivalent
TDA 1432
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MARKING CODE SMD JW
Abstract: TXC CXO A51AC isdn modem 2S34 chmn m1p7 SAB-R3000
Text: SIEMENS AKTIEN6ESELLSCHAF 47E D • ô53St.0S QQBbbSa Ô m S l E ú SAB 82532 1 INTRODUCTION The Enhanced Serial Communication Controller ESCC2 SAB 82532 is a data communication device with two symmetrical serial channels. It has been designed to implement high-speed com
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T-75-37-07
235b05
82532N-TS
PL-CC-68
MARKING CODE SMD JW
TXC CXO
A51AC
isdn modem
2S34
chmn
m1p7
SAB-R3000
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Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHAF 47E D S IE M E N S • ÖE35bGS DD57D31 b « S I E G PD1165t w VERY BRIGHT GREEN PD1167 HIGH EFFICIENCY RED 1.16" Square 8 x 8 Dot Matrix Programmable Display Module With On Board Drivers, Built-In RAM and Software Controllable Features
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E35bGS
DD57D31
PD1165t
PD1167
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siemens sab 82538
Abstract: 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441
Text: SIEM ENS Enhanced Serial Communication Controller ESCC8 SAB 82538 SAF 82538 Preliminary Data 1 CMOS 1C General Features Serial Interface • Eight independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each
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CRC-32
fl23Sb05
siemens sab 82538
3tb siemens
T-0657
SiEMENS PM 350 98
SAB 80188
QD70
SIEMENS ESCC8
1fa MARKING
processor hbt 00 04 g
Q67100-H6441
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Untitled
Abstract: No abstract text available
Text: SIEMENS 8M X 32-Bit EDO-DRAM Module HYM328025S/GS-50/-60 Advanced Information • 8 388 608 words by 32-bit organization • Fast access and cycle time 50 ns access time 84 ns cycle time -50 version 60 ns access time 104 ns cycle time (-60 version) • Hyper page mode (EDO) capability
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32-Bit
HYM328025S/GS-50/-60
DD653tiS
328025S/GS-50/-60
fl235bD5
D0fl53bb
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Untitled
Abstract: No abstract text available
Text: SFH 216 SIEMENS Silicon PIN Photodiode Dimensions in inches mm .291 (7.4) .259 (6.6) .208 (5.3) 197 (5.0) .571 (14.5) .492 (12.5) Cathode T 0.189(4.8) ¥ 0.100 (2.54) 0.181 4.6) _L A .018 (0.45) .106 (2.7) 1Glass Lens Chip Location , 220 (5.6), .208 (5.3)
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GE006314
18-pln
fl535t
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transistor SMD 1gs
Abstract: 46n03l smd 1Gs SD-46 Diode
Text: , • - SPP 46N03L Inf ineon technology SIPMOS Power Transistor Product Summary Features Drain source voltage • N channel ^D S Drain-Source on-state resistance . Enhancement mode f l D S o n Continuous drain current • Avalanche rated 30 V 0 .0 1 2
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46N03L
SPP46N03L
P-T0220-3-1
Q67040-S4147-A2
SPB46N03L
P-T0263-3-2
Q67040-S4743-A2
S35bQ5
Q133777
SQT-89
transistor SMD 1gs
46n03l
smd 1Gs
SD-46 Diode
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2907, SMBT 2907 A PNP Type Marking Ordering Code (tape and reel) PinC Contigui ation
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Q68000-A6481
Q68000-A6473
OT-23
2222/A
fi235bD5
0155S2S
a235b05
012552b
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Untitled
Abstract: No abstract text available
Text: Infineon technologies Surface Mount Capacitive Silicon Absolute Pressure Sensor KP 100 Preliminary Features • • • • • • • Digital output Serial Peripheral Interface SPI Offset calibrated CMOS compatible surface micromachining Diagnostic modes
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Q62705-K348
AET02685
fl535b05
Q134EbE
flE35bG5
013M2L3
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s43a
Abstract: No abstract text available
Text: SIEMENS 8M x 32 -Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE HYM 328020G D-50/-60 Advanced Information • 8 388 608 words by 32-bit organization • Fast access and cycle time 50 ns access time 90 ns cycle time -50 version 60 ns access time 110 ns cycle time (-60 version)
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328020G
D-50/-60
32-bit
flS35b05
B235bG5
00flS452
fl23Sb0S
s43a
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Untitled
Abstract: No abstract text available
Text: BSO 220N Infineon t«ehneiog¡«i Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features • Dual N Channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 20 V ^fos on
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BS0220N
Q67000-S4010
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
D13377T
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ITA03537
Abstract: ITD03534 Q67100-H6189 siemens G75 A 80 ACO3
Text: S IEM EN S ISDN D-Channel Exchange Controller IDEC PEB 2075 CM OS IC 1 • • • • • • • • • • • • • Features Four independent HDLC channels 64-byte FIFO storage per channel and direction Handling of basic HDLC functions flag detection/generation
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64-byte
P-DIP-28
P-LCC-44
flB35b05
ITA03537
ITD03534
Q67100-H6189
siemens G75 A 80
ACO3
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Untitled
Abstract: No abstract text available
Text: SIEMENS TV SAT IF-FM-Demodulator TDA6140-5X Preliminary Data Bipolar IC Features • • • • • Input sensitivity approx. - 40 dBm Symmetrical, low impedance IF-lnput Two AFC-Outputs for up and down direction of tuning AFC-offset adjustable by an external control voltage
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TDA6140-5X
P-DSO-16-1
Q67000-A5172
P-DSO-16-1
0235bQ5
6140-5X
fl235b05
fl23SbÃ
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bt 33 f
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit Dynamic RAM 3.3 V, 2k-refresh HYB 3117400BJ/BT -50/-60/-70 Prelim inary Inform ation 4 194 304 words by 4-bit organization 0 to 70 ‘C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)
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3117400BJ/BT
bt 33 f
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SAB-C501
Abstract: No abstract text available
Text: SIEMENS 8-Bit CMOS Microcontroller SAB-C501 Preliminary • • • • • • • • • • • Fully compatible to standard 8051 microcontroller Versions for 12/20/40 MHz operating frequency 8 K x 8 ROM SAB-C501 -1R only 256 x 8 RAM Four 8-bit ports
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SAB-C501
SAB-C501
16-bit
P-DIP-40
P-LCC-44
SAF-C501
CA01762
SAB-C501-L/C501
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Untitled
Abstract: No abstract text available
Text: SIEMENS Double Differential Magneto Resistor FP 420 L 90 2 6 fingers on both sides free of lacquer 3) Center-distance between the Oiff.-Systems. Approx. w e ig h t 0.2 g GPX06896 Dimensions in mm Features Typical applications • • • • • • • •
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GPX06896
fl235b05
00fl2fiSb
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Q67060-S6703-A4
Abstract: FLL15 BTS949 E3043 E3062A GPT05165 Q67060-S6703-A2
Text: SIEM ENS H IT F E T B T S 9 4 9 Smart Lowside Power Switch Features • • • • • • • • • Product Summary Logic Level Input Input protection ESD On-state resistance Thermal shutdown Current limitation Overload protection Load current (ISO)
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BTS949
T0220/5
Q67060-S6703-A2
GPT05165
E3043
Q67060-S6703-A3
E3062A
Q67060-S6703-A4
FLL15
BTS949
E3043
GPT05165
Q67060-S6703-A2
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6s3b
Abstract: Q67100-Q2098 Q67100-Q2099
Text: SIEM EN S 8M X 32-Bit EDO-DRAM Module HYM328025S/GS-50/-60 Advanced Inform ation • 8 388 608 words by 32-bit organization • Fast access and cycle tim e 50 ns access time 84 ns cycle tim e -50 version 60 ns access time 104 ns cycle tim e (-60 version)
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32-Bit
HYM328025S/GS-50/-60
0235bD5
328025S/GS-50/-60
L-SIM-72-15
fl235b05
6s3b
Q67100-Q2098
Q67100-Q2099
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B158-H6497-X-X-7600
Abstract: A535B old Resistors Siemens s
Text: SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517A/83C517A-5 Preliminary SAB 83C517A-5 SAB 80C517A Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • SAB 80C517A/83C517A-5, up to 18 MHz operation
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83C517A-5
80C517A
10-bit
80C515,
80C517,
80C515A
P-LCC-84,
P-MQFP-100-2
80C517A/83C5r
MQFP--100
B158-H6497-X-X-7600
A535B
old Resistors Siemens s
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Untitled
Abstract: No abstract text available
Text: S IE M E N S NPN Silicon A F Transistor BCP 68 • For general A F application • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: B C P 69 PNP Type BCP BCP BCP BCP 68 68-10 68-16 68-25 Marking
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Q62702-C2126
Q62702-C2127
Q62702-C2128
Q62702-C2129
OT-223
6E35bD5
012Qb44
BCP68
fi235bD5
QlHQb45
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